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25 Jan 2007: ithou. t per. mis. sion. where D = 0E; H = 10B: (24)The latter vectors are used to describe non-trivial electrical and magnetic properties ofmedia for which and are callled permittivity ... We might ask: can we obtain an understanding of the elementary

21 Jun 2007: The sample absorbed in the UV–Vis range.Absorption shoulders occurred close to the direct band-gap energies of crystalline silicon [24,25]. ... 24] J. Singleton, Band Theory and Electronic Properties of Solids, OxfordUniversity Press, 2001, p.

2 Jan 2007: z =x iy. 2, z̄ =. x iy2. , (24). =12. (.

2 Mar 2007: Following Ref. 1 (Eq.6 and note 24) and Ref. 2, for.

5 Apr 2007: 24. Another celebrated Corollary of Theorem 5.3 is the so-called Closed graphtheorem.

8 Jan 2007: These films are usually deposited by plasma-enhanced. chemical vapor deposition (PECVD) at low bias voltage22-24. ... For a 100 nm a-C:H-coated bottle, the OTR is reduced. to 0.0008 cc/package/24 hours from the 0.04 cc/package/24 hours of.

25 Jan 2007: E. Huppert. Parameter Value Units. a (5.0+ 0.24( T- 20)) x U 0.015 cm2 s-' CC 4.14 J O C - '. 2.66 J cm-3 O C - '

5 Jun 2007: The DESdesign reference survey strategy is to survey the full 5000deg2 in year 1 for 200secs per bandreaching 10sigma limits[AB mags] in g, r, i and z of 24.1, ... The goal for the full 5 years is a total exposure of 400, 400,1200, 2000 secs in g, r i

27 Mar 2007: For example, Erlandsson et al. [24,25] reportedsignificant restructuring of 0.5 nm thick Pd films (meltingand Huetting temperatures of 1554 and 275 1C, respec-tively) at 200 1C when subject ... 24] R. Erlandsson, M. Eriksson, L. Olsson, U. Helmersson, I.

10 Apr 2007: Although silicon is the conventional hardware on. nnano.2006.158_149 RH_TDBU.indd 160nnano.2006.158_149 RH_TDBU.indd 160 24/11/06 17:12:5024/11/06 ... If citing these articles, please refer to the web version. nnano.2006.158_149 RH_TDBU.indd Sec1:161nnano