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31 - 40 of 320 search results for KaKaoTalk:vb20 200 where 0 match all words and 320 match some words.

  1. Results that match 1 of 2 words

  2. https://people.ast.cam.ac.uk/~wfcam/docs/minutes/minutes_080806.txt

    https://people.ast.cam.ac.uk/~wfcam/docs/minutes/minutes_080806.txt
    19 Aug 2008: The GPS astrometry glitches affecting 200 files over the 05A-07B period noted in the previous minutes were fixed and have been re-transferred by WFAU.

  3. nnano.2008.312 738..742

    www-g.eng.cam.ac.uk/nms/publications/pdf/Wang_NNANO2008.pdf
    8 Dec 2008: 1,000 1,200. Wavelength (nm). Er3+ iongain bandwidth. 1,400 1,600 1,800 2,000. ... et al. Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker.

  4. A5d.dvi

    www.damtp.cam.ac.uk/user/hinch/teaching/A5d.pdf
    13 Mar 2008: Cop. yrig. ht. 200. 8 U. nive. rsity. of C. ambr. ... 1. Cop. yrig. ht. 200. 8 U. nive. rsity. of C.

  5. s.dvi

    www.statslab.cam.ac.uk/~rrw1/stats/Sa4.pdf
    4 Dec 2008: E.g., if we are trying to estimate the proportion p of N = 200 studentsin a lecture who support the Labour party and we take n = 200, so we sample themall,

  6. phb79554d_550

    www-g.eng.cam.ac.uk/nms/publications/pdf/Scheel_PSSb2008.pdf
    2 Oct 2008: 200 300 400 500 600 700 800 900Temperature (K). 100. 200. ... m-1. ). 0 50 100 150 200 250 300 350T (K).

  7. Particle Flow Calorimetry and ILC Detector Design

    https://www.hep.phy.cam.ac.uk/~thomson/talks/BonnFinal.pdf
    31 Jan 2008: Centre-of-mass energy adjustable from 200-500 GeV• upgradeable to 1 TeV (i.e. ... ee- qq 0.1 /Bunch Trainee- γγ X 200 /Bunch Train. 500 hits/BX in Vertex det.5 tracks/BX in TPC.

  8. A5b.dvi

    www.damtp.cam.ac.uk/user/hinch/teaching/A5b.pdf
    13 Mar 2008: Cop. yrig. ht. 200. 8 U. nive. rsity. of C. ambr. ... 1. Cop. yrig. ht. 200. 8 U. nive. rsity. of C.

  9. ex.dvi

    www.statslab.cam.ac.uk/~rrw1/stats/ex3nocom2.pdf
    22 Jan 2008: This process was repeated 200 times.Totals of 85, 87, 88, 89, 90,. ,

  10. doi:10.1016/j.physe.2007.11.034

    www-g.eng.cam.ac.uk/nms/publications/pdf/Hu_PE2007.pdf
    27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device

  11. L-band ultrafast fiber laser mode locked by carbon nanotubesZ. ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Sun_APL2008.pdf
    20 Aug 2008: 214.199 214.200 214.201 214.202. -120. -100. -80. -60. -40. -20. Inte. ... 0 200 400 600 800 1000-80. -60. -40. -20. 0. (b).

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