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  2. CDT ADVANCED LECTURES LENT 2020 Date Speaker 17th January ...

    www-g.eng.cam.ac.uk/nms/Seminars/Le2020.pdf
    22 Jul 2022: CDT ADVANCED LECTURES LENT 2020. Date Speaker. 17th January Prof Saverio Russo HfS2 is the new Silicon. ... monolayers University of Nottingham. 13th March Prof Judith Driscoll Control of oxide interfaces for new electronics.
  3. Terahertz photodetection in scalable single-layer-graphene and…

    www-g.eng.cam.ac.uk/nms/publications/pdf/436_Asgari2022.pdf
    22 Jul 2022: Being compatible with Si and a wider range ofIII–V materials and substrates,2,5–7 they open new prospects foremerging research domains, such as future high-density optical
  4. High-yield parallel fabrication of quantum-dot monolayer…

    www-g.eng.cam.ac.uk/nms/publications/pdf/429_Fruhman2021.pdf
    15 Aug 2022: 3, 897–900 (2003). 24. Jeong, H. et al. A new approach for high-yield metal - molecule - metaljunctions by direct metal transfer method. ... Lee, T. A New Approach forMolecular Electronic Junctions with a Multilayer Graphene Electrode.
  5. Machine Learning May Sometimes Simply Capture Literature Popularity…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2022.pogna_new.pdf
    25 Mar 2022: Machine Learning May Sometimes Simply Capture LiteraturePopularity Trends: A Case Study of Heterocyclic SuzukiMiyauraCouplingWiktor Beker, Rafał Roszak, Agnieszka Wołos, Nicholas H. Angello, Vandana Rathore, Martin D. Burke,and Bartosz A.
  6. Thermionic graphene/silicon Schottky infrared photodetectors

    www-g.eng.cam.ac.uk/nms/publications/pdf/2022doukas.pdf
    17 Mar 2022: PHYSICAL REVIEW B 105, 115417 (2022). Thermionic graphene/silicon Schottky infrared photodetectors. S. Doukas ,1 P. Mensz,2 N. Myoung ,3 A. C. Ferrari ,4 I. Goykhman ,2, and E. Lidorikis 1,5,†1Department of Materials Science and Engineering,
  7. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors

    www-g.eng.cam.ac.uk/nms/publications/pdf/2022Vangelidis.pdf
    17 Jun 2022: understood as follows: light absorption creates hot non-equilibrium carriers which undergo carrier multiplication byelectronelectron (ee) scattering (τee < 50 fs),46,76,77 i.e., byimpact ionization (interband scattering creating new ... 30), where

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