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1 - 7 of 7 search results for news |u:www-g.eng.cam.ac.uk

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  2. www-g.eng.cam.ac.uk/reactingflows/index.xml

    www-g.eng.cam.ac.uk/reactingflows/index.xml
    2 Nov 2023: thermoacoustics/thermoacoustic-cooling/ A new heat-driven thermoacoustic refrigerator for waste heat recovery is studied. ... A new facility has been commissioned for studying Laser Induced Grating Spectroscopy (LIGS) for measurement temperature and

  3. nature nanotechnology…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Montblanch_2023SI.pdf
    25 Jul 2023: Isotopically varying spectral features of silicon-vacancy in diamond.New J. Phys. 16, 113019 (2014). ... M. & Surovtsev, N. V. Germanium: anew catalyst for diamond synthesis and a new optically active impurity in diamond.

  4. Identification of Exciton Complexes in Charge-Tunable Janus WSeS…

    www-g.eng.cam.ac.uk/nms/publications/pdf/446_Feuer2023SI.pdf
    25 Jul 2023: F. Atomicallythin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 2010,105, 136805.(11) Xiao, D.; Liu, G.-B.; Feng, W.; Xu, X.; Yao, W.

  5. Near‐ and Far‐Field Observation of Phonon Polaritons in Wafer Scale…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Calandrini_2023.pdf
    25 Jul 2023: Recently, layered materials (LMs). have opened new avenues for polariton-based nanophotonics.[1,2] Plasmon and phonon polaritons, for.

  6. Electrically Tunable Nonlinearity at 3.2 Terahertz in Single-Layer…

    www-g.eng.cam.ac.uk/nms/publications/pdf/DiGaspare2_2023.pdf
    17 Aug 2023: New J. Phys. 2013, 15,No. 085019.(10) Mics, Z.; Tielrooij, K.-J.; Parvez, K.; Jensen, S.

  7. Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Xu_2023.pdf
    16 Aug 2023: F. AtomicallyThin MoS2: A New Direct-Gap Semiconductor. Phys. Rev. Lett. 2010,105 (13), No.

  8. Charge carrier complexes in monolayer semiconductors

    www-g.eng.cam.ac.uk/nms/publications/pdf/499_Mostaani2023.pdf
    27 Jul 2023: PHYSICAL REVIEW B 108, 035420 (2023). Charge carrier complexes in monolayer semiconductors. E. Mostaani,1 R. J. Hunt ,2,3 D. M. Thomas,2 M. Szyniszewski,2,4 A. R.-P. Montblanch,5 M. Barbone,1,5 M. Atatüre,5. N. D. Drummond,2 and A. C. Ferrari

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