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14 Sep 2016: The recent attempts to harness these properties for new-generation optoelectronic devices, from photodetectors18 to. ... F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. AtomicallyThin MoS2: A New Direct-Gap Semiconductor.

15 Jun 2016: We reduce the symmetry of theMiura-ori to obtain new patterns while preserving the flat-foldability conditionat each node.

2 Sep 2016: M. New J. Phys. 2009, 11 (9), 095011.(37) Lucchese, M. M.; Stavale, F.; Ferreira, E.

1 Jul 2016: Cambridge is very well-placed in the network of UK,European and global initiatives targeting the development of new products anddevices based on graphene and related materials.”. ... innovators). Newsletter SubscriptionStay informed of the latest news

14 Sep 2016: By focusing on these simpler elements, new insightinto real and general disclination effects may be garnered,such as the singular properties at real vertices—which are notyet well understood. ... 8] S. P. Timoshenko and J. M. Gere, Theory of Elastic

20 Sep 2016: 11] R. J. Lang, The Complete Book of Origami (Dover, New York,1988).

27 May 2016: M.; Kwok, K. N. Physics of Semiconductor Devices, 3rd ed.;Wiley: New York, 2006.(15) Kang, Y.; et al.

25 Nov 2016: Opt. Soc. Am., vol. 39, pp. 970–976, 1949. [13] P. Jacquinot, “New developments in interference spectroscopy,” Rep.

1 Aug 2016: silicon photonics has a problem: it needsten times more energy than we can provide. So, if we want this new, improved internet age, newtechnological, powerefficient solutions need to be found. ... able to make fully functioning

11 Apr 2016: the development of new optically controlled memories for light-assisted programming and. ... 11a). The X-raydiffraction patterns of powders prepared from graphene/trans-azobenzene and graphene/cis-azobenzene show new peaksat 2y12.3 (dspacingB0.72 nm) and