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14 Sep 2016: The recent attempts to harness these properties for new-generation optoelectronic devices, from photodetectors18 to. ... F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. AtomicallyThin MoS2: A New Direct-Gap Semiconductor.

15 Jun 2016: We reduce the symmetry of theMiura-ori to obtain new patterns while preserving the flat-foldability conditionat each node.

1 Aug 2016: silicon photonics has a problem: it needsten times more energy than we can provide. So, if we want this new, improved internet age, newtechnological, powerefficient solutions need to be found. ... able to make fully functioning

2 Sep 2016: M. New J. Phys. 2009, 11 (9), 095011.(37) Lucchese, M. M.; Stavale, F.; Ferreira, E.

14 Sep 2016: By focusing on these simpler elements, new insightinto real and general disclination effects may be garnered,such as the singular properties at real vertices—which are notyet well understood. ... 8] S. P. Timoshenko and J. M. Gere, Theory of Elastic

20 Sep 2016: 11] R. J. Lang, The Complete Book of Origami (Dover, New York,1988).

27 May 2016: M.; Kwok, K. N. Physics of Semiconductor Devices, 3rd ed.;Wiley: New York, 2006.(15) Kang, Y.; et al.

18 Oct 2016: 2Department of Physics, Rice University, Houston TX 77251, USA 3Department of Materials Engineering, New Mexico Tech, Socorro NM 87801, USA.

25 Nov 2016: Opt. Soc. Am., vol. 39, pp. 970–976, 1949. [13] P. Jacquinot, “New developments in interference spectroscopy,” Rep.

11 Apr 2016: the development of new optically controlled memories for light-assisted programming and. ... 11a). The X-raydiffraction patterns of powders prepared from graphene/trans-azobenzene and graphene/cis-azobenzene show new peaksat 2y12.3 (dspacingB0.72 nm) and