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6 Feb 2014: 6b. Hences(b, b) = 12(b2 b2)/6b = 4b = 4c. For counting strands in class III, another useful observation is that for any pairb = kb0 and c = kc0 with k an ... If the vertex count of a prime octahedrite is inflated by a factor(b2 c2), where {b, c} = {b, 0}

6 Feb 2014: also sufficient for GðpÞ to be isostatic: b 2j 3 andfor any non-empty set of bars B; b 6 2j 3 and. ... to be isostatic: b 2j 3 and for any non-emptyset of bars B; b 6 2j 3 and.

5 Jun 2014: b) Second harmonic generation autocorrelation trace of mode-locked pulses at 2 μm. ... N.; Yin, Y.; Unlü, M. S.; Gold-berg, B. B.; Swan, A.

20 Sep 2016: C. ββ. D. BA. 2α. β β. FF. CD. A B0,a,b. ... φA. φA. θA. γ. β β. γ A. A′. B′ B′A′.

21 Sep 2021: We start from the B-LM symmetryproperties to derive a general tensorial expression for theinterlayer force constants. ... To illustrate this, Figure2a and Figure 2b show two fictitious crystals with the same B-.

1 Mar 2021: devices, as in Figure 5a,b, defined by EBL, reactive-ion etchingand thermal evaporation of metallic contacts. ... b) SLG patterning using EBL and RIE. (c) Ni/Au contactsdeposition using evaporation and lift-off.

13 Aug 2011: A.C. Ferrari (B)Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UKe-mail: acf26@eng.cam.ac.uk. ... Polystyrene-block-polyacrilic acid (PS-b-PAA) formsmicelles around individual SWNTs by gradual addition of water.

11 Nov 2013: Nano Lett. 2012, 12, 1176–1183. 6. Heller, D. A.; Jin, H.; Martinez, B. ... Nat.Nanotechnol. 2009, 4, 114–120. 7. Aili, D.; Gryko, P.; Sepulveda, B.; Dick, J.

3 Feb 2014: The device is therefore proposed for high-displacement, quasi-static applications. 2006 Elsevier B.V. ... δ. Q. ]=[. A B. B C. ][F. V. ], (8).

20 Jun 2017: The electric field in (b–g) is always applied between top and bottom layers. ... b) Typical RS behaviour for the same devices but using optimal testing conditions.