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1 - 7 of 7 search results for Economics test |u:www-g.eng.cam.ac.uk where 0 match all words and 7 match some words.
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  2. Photocatalytic activity of exfoliated graphite–TiO2 nanoparticle…

    www-g.eng.cam.ac.uk/nms/publications/pdf/379.pdf
    7 Apr 2020: This compound is taken as model for organic volatilepollutants, since its molecular structure is close to that of theenvironmental contaminants used in industry and agricul-ture.103 This test follows the ... We test 10 ml mixturescomprising 2.86%ml of an
  3. Layered material platform for surface plasmon resonance biosensing

    www-g.eng.cam.ac.uk/nms/publications/pdf/390.pdf
    7 Apr 2020: 8Scientific RepoRtS | (2019) 9:20286 | https://doi.org/10.1038/s41598-019-56105-7. www.nature.com/scientificreportswww.nature.com/scientificreports/. For positive tests, 8 concentrations of HT-2 in ... For negative tests, same concentrations of
  4. nl9b02238 1..13

    www-g.eng.cam.ac.uk/nms/publications/pdf/381.pdf
    7 Apr 2020: b) Conductivity as a function of gate voltage from a 4-terminalmeasurement on test Hall bars. ... Figure 4. (a) Schematic test structure to measure two GPDs in series.
  5. an-2019-011268 1..10

    www-g.eng.cam.ac.uk/nms/publications/pdf/388.pdf
    7 Apr 2020: EMI shielding tests are performed using a PNA (vectornetwork analyzer 10 MHz50 GHz), two RF cables, and one pair of.
  6. Tetrahedral amorphous carbon resistive memories with graphene-based…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Ott2018.pdf
    14 Apr 2020: The device under test is that in figure 1(b). The voltage is applied to the Pt bottom electrode.
  7. 7 Apr 2020: Monoaxialcompression tests are reproduced with periodic boundary conditions along thelateral faces of the supercell (x and y directions) while the two horizontal rigidsurfaces act to apply the monoaxial load on the
  8. nn0c02738 1..15

    www-g.eng.cam.ac.uk/nms/publications/pdf/403.pdf
    24 Sep 2020: Figure 9. (a) A cross-section of a double-gate test structure. (b) Comparison of field-effect characteristics when using bottom gate (SiO2dielectric) and top gate (PVA dielectric).

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