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  2. 13 Apr 2011: i. j. [h(xi ,tj ) f (xi ctj )]2, (2). where h represents the thickness recorded at discrete positionsxi and times tj.
  3. PII: 0198-0149(81)90135-7

    www.itg.cam.ac.uk/people/heh/Paper41.pdf
    26 Sep 2011: tJ l,t,R. occupied with the failing conductivity cell and Stas S842 to 8853 with the r c p l a c c m e u resistor.

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