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nnano.2006.158_149 RH_TDBU.indd
www-g.eng.cam.ac.uk/nms/highlights-press/Nanotechnologygraphene.pdf10 Apr 2007: Although silicon is the conventional hardware on. nnano.2006.158_149 RH_TDBU.indd 160nnano.2006.158_149 RH_TDBU.indd 160 24/11/06 17:12:5024/11/06 ... If citing these articles, please refer to the web version. nnano.2006.158_149 RH_TDBU.indd Sec1:161nnano -
doi:10.1016/j.physe.2006.06.014
www-g.eng.cam.ac.uk/nms/publications/pdf/Pisana_PE2007.pdf27 Mar 2007: For example, Erlandsson et al. [24,25] reportedsignificant restructuring of 0.5 nm thick Pd films (meltingand Huetting temperatures of 1554 and 275 1C, respec-tively) at 200 1C when subject ... 24] R. Erlandsson, M. Eriksson, L. Olsson, U. Helmersson, I. -
http://www.nanotechwire.com/news.asp?nid=3608&ntid=&pg=41
www-g.eng.cam.ac.uk/nms/highlights-press/nanotechwirenewmethodofgrowingcnt.pdf20 Apr 2007: 8/10/2006 12:24:38 AM. New method of growing carbon nanotubes. to revolutionise electronics. -
doi:10.1016/j.optcom.2007.04.028
www-g.eng.cam.ac.uk/nms/publications/pdf/King_OC2007.pdf21 Jun 2007: The sample absorbed in the UV–Vis range.Absorption shoulders occurred close to the direct band-gap energies of crystalline silicon [24,25]. ... 24] J. Singleton, Band Theory and Electronic Properties of Solids, OxfordUniversity Press, 2001, p. -
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www-g.eng.cam.ac.uk/nms/publications/pdf/Pisana_JPCC2007.pdf18 Dec 2007: s crystal orienta-tion.24-26 Yu et al. ... R.; Hanein, Y.J. Phys. Chem. B2006, 110, 21419.(24) Ago, H.; Nakamura, K.; Ikeda, K.; Uehara, N.; Ishigami, N.; Tsuji,. -
LETTERS Breakdown of the adiabaticBorn–Oppenheimer approximationin…
www-g.eng.cam.ac.uk/nms/publications/pdf/Pisana_NM2007.pdf2 Mar 2007: Thedependence of the electronic bands on u can be obtained from theDFT electron–phonon coupling matrix elements (see equation (6)and note 24 of ref. ... Phys. Rev. Lett. 96,. 136806 (2006).24. Moos, G., Gahl, C., Fasel, R., Wolf, M. & -
ISSN:1369 7021 © Elsevier Ltd 2007JAN-FEB 2007 | VOLUME ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_MT2007.pdf8 Jan 2007: These films are usually deposited by plasma-enhanced. chemical vapor deposition (PECVD) at low bias voltage22-24. ... For a 100 nm a-C:H-coated bottle, the OTR is reduced. to 0.0008 cc/package/24 hours from the 0.04 cc/package/24 hours of. -
Thermal and chemical vapor deposition of Si nanowires:Shape control,…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_JAP2007.pdf18 Dec 2007: 12b correspond to deviceswith 7, 24, and 10 SiNWs for types I, II, and III, respec-tively. ... Curvescorrespond to devices with 7, 24, and 10 SiNWs for types I, II, and III,respectively. -
doi:10.1016/j.ijsolstr.2004.02.037
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/galletly2004b.pdf27 Dec 2007: It was generated using Abaqus. (2002). A length of tube was modelled with a 48 by 48 mesh (24 by 24 for the a 90 case) using S4R. -
phb76194d_598
www-g.eng.cam.ac.uk/nms/publications/pdf/Scardaci_PSSB2007.pdf28 Nov 2007: Nanoruptor ultrasonicator) in presence of sodium dodecylbenzenesulphonate (SDBS) as surfactant [24]. ... 24] M. F. Islam, E. Rojas, D. M. Bergey, A. T.
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