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11 Oct 2011: Soil  Mix Remediation Technology. Publicity articles:.

11 Oct 2011: Proceedings of the International Water Association World Water Congress, September 19-24, 2010, Montreal, Canada.

24 Nov 2011: 1 COMMENT. KFC 11/24/2011. First Demonstration of Inkjet-Printed GrapheneElectronicsThe 'wonder material' of modern science now promises all-printed,? ... Young Leonardo. CLOSE COMMENTS. username. ZephirX. 228 Comments. TODAY 11/24/2011. To comment,

25 Nov 2011: Thanks. POSTED BY BW AT 11/24/2011. LABELS: ENABLING TECHNOLOGY, GRAPHENE, PRINTABLE ELECTRONICS, SCIENCE. ... 07/24 - 07/31 (46). 07/17 - 07/24 (45). 07/10 - 07/17 (54).

24 Nov 2011: November 24, 2011. Inks augmented with graphene polymer to overcome traditionalshortcomings of printed electronics. ... Cambridge University demonstrate inkjet-printed graphene electronics. http://www.therecycler.com/posts/cambridge-university-demonstrate

25 Nov 2011: Anthony on November 24, 2011 at 10:11 am 1 Comment.

5 Aug 2011: 02 Aug 2011 12:24 | by Matthew Finnegan in London | Filed in Hardware IM Flash Smartphone 0 Comments.

15 Feb 2011: diameters,8,18 while thisis an intrinsic property of graphene, due to the gapless lineardispersion of Dirac electrons.19–22,24 Q-switching was re-ported using SWNTs: Ref. ... Offerhaus,and D. J. Richardson, Opt. Lett. 24, 388 1999. 4M. Siniaeva, M.

7 Apr 2011: 3] S.V. Chernikov et al., “Raman fibre laser operating at 1.24 µm.” Electronics Letters 34, 680 (1998).

7 Apr 2011: Large Energy Pulse Generation Modulated by Graphene Epitaxially Grown on Silicon Carbide", ACS Nano, DOI: 10.1021/nn102280m (2010) [24] Y.

14 Aug 2011: not the same ΓG, this being much bigger instage 2.24,28,29. ... J. Appl. Phys. 2001,90, 5002–5012.(24) Ferrari, A. C.; Rodil, S. E.; Robertson, J.

1 Aug 2011: For the. FAM-DNA-SWNT conjugate sample in Figure 1, this yields aconcentration of surface-bound FAM-DNA of 24 nM. ... the corresponding transitions from23,24. f 4ε0c2me lnð10ÞNAe20. ZεðνÞ dν. where ε0 is the free space permittivity, c is the

5 Oct 2011: high-κ gate dielectrics. Electrically active NWshave also been used to gate graphene FETswhile acting at the same time as evaporationmasks to yield channel lengths down to130 nm.24 In all ... 24. Liao, L.; Lin, Y. C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.

29 Jul 2011: St. J. J. Lightwave Technol. 24, 4729–4749 (2006).10. Dudley, J. M., Genty, G. &

30 Aug 2011: 2. 2. 4. 4. 4. 6. 6. 10. 10. 24. 20. ... Appl. Phys. Lett. 91, 063124 (2007).24. Abergel, D. S. L., Russell, A. &

3 May 2011: Published: March 24, 2011. r 2011 American Chemical Society 5941 dx.doi.org/10.1021/ja110939a |J. ... 2007, 7,2711.(24) Blake, P.; Hill, E. W.; Neto, A. H. C.; Novoselov, K.

3 May 2011: These are related to the fluid dynamical vis-cosity (0.911 mPa s for water at 24 C) and particlesize. ... Am. Chem. Soc. 2009, 131, 3611–3620. 24. Sun, Z.; Hasan, T.; Torrisi, F.; Popa, D.; Privitera, G.; Wang, F.;Bonaccorso, F.; Basko, D.

3 May 2011: kxeΓkx|τ| (24). Thus, the corresponding autocorrelation functions for the ve stochastic vari-ables X,Y,Z,ϕ,θ decay with relaxation frequencies:.

31 May 2011: Rev. Lett. 98, 196803 (2007).[24] B. Huang et al., arXiv:0708.1795v1.[25] H.

30 Mar 2011: to bulk Si, depending on diameter [24–27], while others claiman opposite trend [28, 29, 2]. ... Phys. Lett. 372 763[24] Han X, Zheng K, Zhang X, Zhang Z and Wang Z 2007 Adv.