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  2. Supplementary information for Confinement of long-lived interlayer…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch_supp.pdf
    16 Jun 2021: S12), from which we extract τs =24.24.0 ns and τl =3.530.09 µs (red), τs =104.6 2.7ns. ... This is in agreement with. Refs. [24, 25]. We extract and show in Supplementary Fig.
  3. Covalently interconnected transition metal dichalcogenide networks…

    www-g.eng.cam.ac.uk/nms/publications/pdf/419_Samori_SI.pdf
    1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors.
  4. Wafer-Scale Integration of Graphene-Based Photonic Devices

    www-g.eng.cam.ac.uk/nms/publications/pdf/412_ACSnano.pdf
    1 Mar 2021: 24 Siliconphotonics (SiPh) modulators for 30 Gbaud applications haveIL 23 dB higher than InP- and LiNbO3-basedmodulators,25 because of the free carrier effect,26 requiringdevice lengths in the mm scale. ... copy. We collect 8909 spectra on 48 crystals
  5. Optoelectronic mixing with high-frequency graphene transistors

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021montanaro.pdf
    9 Jun 2021: Graphene-basedoptoelectronic devices are compatible with Si platforms16,24–27.Therefore, graphene-based OEMs could combine telecomoperation and CMOS compatibility. ... 24. Pospischil, A. et al. CMOS-compatible graphene photodetector covering alloptical
  6. Tunable, Grating‐Gated, Graphene‐On‐Polyimide Terahertz Modulators

    www-g.eng.cam.ac.uk/nms/publications/pdf/409_new.pdf
    23 Mar 2021: multiple SLGs.[17,22] At THz frequencies, however, interband transitions are usually blocked due to the fact that as-prepared SLG is doped,[23,24] hence intraband electronic transi-tions dominate ... Coleman, et al., 2D. Mater. 2020, 7, 022001. [24] K. F
  7. Graphene overcoats for ultra-high storage density magnetic media

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Dwivedi.pdf
    9 Jun 2021: We perform Raman mea-surements at 785 nm, the available Raman wavelength closest tothat used in HAMR (830 nm25,55), with a spot size 1.24 μm, asdetermined by the razor ... 75 on a 0.24 cm2. area, is investigated using an electrochemical corrosionmethod51
  8. Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Asgari_new.pdf
    16 Dec 2021: coefficient of resistance.24 Single-crystal (SC)CVD SLG, coupled to photonic waveguides, was used forultrafast, zero-dark-current telecom photodetectors (PDs) fordatacoms,25 and wafer-scale integration of electro-absorptionmodulators ... We also evaluate
  9. Confinement of long-lived interlayer excitons in WS2/WSe2…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch.pdf
    16 Jun 2021: ount. s). 0. 6. 12. 18. 24. x20. x4. x1. Fig. ... Nat. Mater. 13, 247–252 (2013). 24. Byrnes, T. et al. Exciton-polariton condensates.
  10. High-responsivity graphene photodetectors integrated on silicon…

    www-g.eng.cam.ac.uk/nms/publications/pdf/2021Schuler.pdf
    18 Jun 2021: Sel. Top. Quantum Electron. 24, 1–12 (2018).16. Nagarajan, R. et al. ... Nat. Photonics 7, 883–887 (2013).24. Wang, X., Cheng, Z., Xu, K., Tsang, H.
  11. HBN-Encapsulated, Graphene-based, Room-temperature Terahertz…

    www-g.eng.cam.ac.uk/nms/publications/pdf/397.pdf
    7 Jan 2021: For these, the dominant detectionmechanism can be tailored by design.21 Their ultrafastdynamics22 and the ease of fabrication23,24 and integration25. ... C. Production and processing of graphene and 2dcrystals. Mater. Today 2012, 15, 564589.(24) Ferrari,

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