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26 Aug 2005: 70–123] J.W. Hutchinson, S. Suo, Adv. Appl. Mech. 29 (1992) 64–192.24] F.

7 Jul 2005: δmax. D= 0.33. (0.1 0.24. ) (2). Porosity in the material increases the penetration. ... Inc., Pawtucket, RI, 1998.[24] X. Chen, J.W. Hutchinson, J. Mech. Phys.

6 Jul 2005: The structures were formed using a through-mask-plating technology [24, 25]. Figure 4 shows the processflow. ... 24] Shenoy R V and Datta M 1996 Effect of mask wall angle onshape evolution during through-mask electrochemicalmicromachining J.

16 Dec 2005: 24 and 27. 4.3 Thermal Actuators and their MEMS Devices. Lateral thermal actuators, switches, and microtweezhave been fabricated and tested electrically. ... 23. S. D. Senturia,Microsystem Design, Chapter 9, Kluwer Academic,Boston/London2001! 24. J.

6 Jul 2005: Received 24 January 2005, in final form 7 April 2005Published 20 June 2005Online at stacks.iop.org/JMM/15/S153. ... Typical examples of techniques hitherto employed for thistask are indentation tests [24], bending tests [25] and resonancetests [26].

4 Aug 2005: Revised 24 March 1998. the Cosserat and Toupin—Mindlin theories were developed for linear elastic materials. ... 1and u. 2at each ‘mid-side’ node. The total number of degrees of freedom per element is 24.

31 Aug 2005: N NI I [!L'jjpqT11C(0)(N-1)op)!L',skJ. (2.24)0-1 P-I. In the foregoing we have assumed that uo) is afunction of £<!).

15 Nov 2005: improve the precision; the second, to establish reproducibility. How to write a paper, 6th edition MFA, 20/02/05 24.

6 Jul 2005: P_ES_g sm _Em se _Ee sij_Epij: 24. V.S. Deshpande, N.A. Fleck / J.

6 Jul 2005: Q̇Y = h(EP)̇P; (24). ̇i = ‘2h(EP)̇P;i (25). and the e4ective stress rate follows from (15), (24) and (25) as.