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24 Apr 2009: CNT arrays for photonics - nanotechweb.org http://nanotechweb.org/cws/article/tech/38812. 1 of 2 2009/4/24 15:27. ... nanotechweb.org. TECHNOLOGY UPDATE. Apr 24, 2009. Carbon nanotube arrays could be employed in photonic devices like deep-UV photonic

9 Mar 2009: d2sb =. 4λψ2δ5tD3. π2n. (EmEs. )(24). and hence the mass msb of the offset struts to provide adequate resistance against buckling is.

20 Oct 2009: 8. This isvalidated by NMR and EELS data where available [24], as shown in the Figure. ... 1990)23. J. Robertson, Phys Rev B 53, 16302 (1996)24. M. A.

8 Dec 2009: Similar to the case of nanotubes, confinement modifiesthe electronic structure of graphene, when cut intonanoribbons [18–24]. ... Harrison, Phys.Rev. B 75, 064418 (2007). [24] K. Nakada, M. Igami, and M.

7 Jul 2009: Conceptual Design for a Laminar Flying Wing Aircraft. T.I. Saeed , W.R. Graham†† , H. Babinsky ‡ , J.P. Eastwood , C.A. Hall , J.P. Jarrett ‖,. M.M. Lone and K.A. Seffen ††. Department of Engineering, University of Cambridge, Trumpington

15 Oct 2009: Recently,a a. Ferrari and Robertson 24 have shown from their workŽ. ... Lett. 76. Ž. Ž. 18 2000 2627. Ž. 24 A.C. Ferrari, J.

30 Oct 2009: The segmented primary reflector will consist of 18 hexagonalBeryllium (Be) 132m flat-to-flat segments, using heritagetechnology from the Spitzer mission(23,24).

2 Feb 2009: All these parameters arein agreement with a more pronounced graphitic ordering ofthe sample [24]. ... Opt. 23, 3806 (1984)24. J. Robertson: Prog. Solid State Chem. 21, 199 (1991)25.

20 Oct 2009: lay. 3.24 63.5ta-C:H 70% 28.4 2.35 70 6 30%ta-C:H 28.4 2.35 43. ... of 3.24 g/cm 3 [11].

1 Feb 2009: Y. S. Li, N. R. Tao, K. Lu, Acta Mater. 56, 230 (2008).24. ... state by annealing (we used 450C in Ar atmo-sphere for 24 hours; higher annealing T dam-aged graphene).

15 Oct 2009: The PSD of EW sur-faces can be calculated analytically (24):. bkhkðsÞk2À 0 ej2nk2 sbkhkð0Þk2À þ. ... 2À þ k9k0 bkhk(s)k2À (24) witha cutoff k0 0 2p/2.35 nm.

15 Oct 2009: Model a b. EW 0 0. KPZ 0.38 0.24. MBE 1 1/4. ... sputtering (BMS) [50]. The growth exponent for MS a-C films is 0.24,.

14 Apr 2009: D peak: the 2Dpeak.18 This lies at 2690 cm1 and involves phonons atK q.18,24 q depends on the excitation energy, due todouble resonance, and the linear dispersion of ... Lett. 91, 233108 2007.24 A. C. Ferrari, Solid State Commun. 143, 47 2007.25 A.

21 Jan 2009: either due to the dispersant molecules surroundingthe SWNTs8,9,11,24 or to the presence of SWNT bundles.41-44. ... L.; Heinz, T. F. Phys. ReV. Lett. 2006, 96,167401. (24) Walsh, A.

24 Mar 2009: 064304-2 Cantoro et al. J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. ... J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169.

26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett

15 Oct 2009: Therefore, to a first order, the effect of neutraland radical species can be neglected and the deposition process may be described by asubplantation model of subsurface growth [24, 25]. ... Mater. 4,. 366 (1995).[23] K. Enke, Thin Solid Films 80, 227

15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B.

20 Oct 2009: 24, 26, 32, 33,and 36. The G peak position, PosG, increases and its fullwidth at half maximum, FWHMG, decreases for both elec-tron and hole doping. ... 24 C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A.

28 Jul 2009: GO can be subse-quently reduced to graphene,23 but leavesa significant number of defects that disruptthe electronic properties.24 Recently, much. ... Nano Lett. 2008, 8,4283–4287. 24. Mkhoyan, K. A.; Contryman, A. W.; Silcox, J.; Stewart, D.