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15 Jul 2010: In particular, it was proposed thatfully hydrogenated graphene (graphane) would be stable[24]. ... The main difference between graphene and graphaneis that, while the former is fully sp2 bonded, the latter issp3, as diamond [24].

27 Apr 2021: Dint(μ) = ωμ ω0 μD1 = D2μ2/2 D3μ3/6 D4μ4/24. , is shown in Figure 3b, top. ... Nano Lett.2014, 14, 62316236.(24) Robert, C.; Picard, R.; Lagarde, D.; Wang, G.; Echeverry, J.

22 Jul 2022: The second design features twotop-gates, connected to the left and right arms of a 24 lm radius bow-tie antenna. ... 24 andAl2O3/SLG PDs. We then evaluate correlations among NEP, Sb, andn0 using the Pearson coefficient.

10 Dec 2007: neutrality point away from zero gatevoltage.12–14,19,23,24 However, it is quite remarkable that“pristine” samples, with no contacts, exhibit almost an orderof magnitude doping variation, with a

26 Jun 2008: In order to getaccurate growth rate measurements, we prepattern thecatalyst by e-beam lithography to get free standing verti-cally aligned CNFs [2], rather than rely on weight gainmeasurements [24] or ... B. K. Teo et al., Nano Lett. 4, 921 (2004).[24] L.

21 May 2008: Also, a precise control overthe doping concentration and crystallographic direction ofCS-NWs is still lacking,24 while for SOI-NWs these param-eters would be accurately determined by the initial propertiesof ... M. Nano Lett. 2005, 5, 2287.(24) Wu, Y.;

15 Aug 2008: Ghislanzoni, 24, 23900 Lecco, Italy 2Engineering Department, Cambridge University, 9 JJ Thompson Avenue, Cambridge CB3 0FA United Kingdom. ... Rev. B 70, 241403 (2004). 24. J. Lefebvre, S. Maruyama, and P.

6 Dec 2006: decreases,E0 is measured at lower energies and no longer over a gap defects that could not be measured by ESR [ 24 ]. Robertson [ 25 ] demonstrated that it is possible to fit ... Robertson, Phys. Rev. B 53 (1996 ) 1594. [ 24 ] F.

2 May 2012: April 24, 2012. C 2012 American Chemical Society. Graphene Electronics, Fresh from the Printer.

4 Dec 2017: possible to derive the SWNT chirality [24, 25]. Matching the diameter with excitation wavelength in the Kataura plot also gives information on. ... 24] Paillet M, Michel T, Meyer J C, Popov V N, Henrard L, Roth S and Sauvajol J L 2006 Raman active

28 Mar 2017: 24 M. Yi and Z. G. Shen, J. Mater. Chem. A, 2015, 15, 5330.25 J. ... O’Neill, U. Khan and J. N. Coleman, Chem. Mater., 2012,24, 2414.

15 Oct 2009: The PSD of EW sur-faces can be calculated analytically (24):. bkhkðsÞk2À 0 ej2nk2 sbkhkð0Þk2À þ. ... 2À þ k9k0 bkhk(s)k2À (24) witha cutoff k0 0 2p/2.35 nm.

11 May 2018: B.; Turnbull, G. A. How torecognize lasing. Nat. Photonics 2009, 3, 546.(24) Purcell, E. ... Today 1989, 42, 24.(26) Auffev̀es, A.; Gerace, D.; Geŕard, J.-M.; Franca Santos, M.;Andreani, L.

1 Feb 2009: Y. S. Li, N. R. Tao, K. Lu, Acta Mater. 56, 230 (2008).24. ... state by annealing (we used 450C in Ar atmo-sphere for 24 hours; higher annealing T dam-aged graphene).

23 Mar 2021: multiple SLGs.[17,22] At THz frequencies, however, interband transitions are usually blocked due to the fact that as-prepared SLG is doped,[23,24] hence intraband electronic transi-tions dominate ... Coleman, et al., 2D. Mater. 2020, 7, 022001. [24] K. F

7 Jan 2021: For these, the dominant detectionmechanism can be tailored by design.21 Their ultrafastdynamics22 and the ease of fabrication23,24 and integration25. ... C. Production and processing of graphene and 2dcrystals. Mater. Today 2012, 15, 564589.(24) Ferrari,

9 Jun 2021: Graphene-basedoptoelectronic devices are compatible with Si platforms16,24–27.Therefore, graphene-based OEMs could combine telecomoperation and CMOS compatibility. ... 24. Pospischil, A. et al. CMOS-compatible graphene photodetector covering alloptical

18 Jun 2021: Sel. Top. Quantum Electron. 24, 1–12 (2018).16. Nagarajan, R. et al. ... Nat. Photonics 7, 883–887 (2013).24. Wang, X., Cheng, Z., Xu, K., Tsang, H.

20 Nov 2006: DFTcalculations are done with the gradient corrected functionalof Ref. [24]. We use plane waves (40 Ry cutoff ) andpseudopotential approaches [25]. ... 24] J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev.

2 Feb 2009: All these parameters arein agreement with a more pronounced graphitic ordering ofthe sample [24]. ... Opt. 23, 3806 (1984)24. J. Robertson: Prog. Solid State Chem. 21, 199 (1991)25.

6 Aug 2015: charge builds up at the photoanode, leading to trapping of. electrons near the back electrode.23,24 Graphene, due to its. ... with lower l (usually the hole) limits transport23,24 andresults in charge accumulation at the contact/polymer inter-.

10 Jan 2013: composite with graphene produced by liquid phase exfolia-. tion of graphite.14,24 Compared to solid-state lasers, fiber.

3 Dec 2010: Lindemann index,. 24. Here, we analyze the nanoparticles near. the melting point by investigating, as func-. ... SolidLiquidPhase Behavior in Microclusters. Adv. Chem. Phys. 1988, 70,75–138. 24. Lindemann, F.

27 Jul 2023: In LSMs, theso-called Rytova-Keldysh interaction (RKI) potential [24,25]provides a more accurate interaction between charge carri-ers. ... In Eq. (14) the electrostatic interaction potentialV , known as RKI [24,25,97], is given by [29]:.

16 Apr 2007: NANOLETTERS. 2007Vol. 7, No. 3. 602-608. 10.1021/nl0624824 CCC: $37.00 2007 American Chemical SocietyPublished on Web 02/24/2007. ... S.; Bassi, A. L.;. Bottani, C. E.; Sancrotti, M.Carbon 2004, 42, 440.(24) Panzner, G.; Diekmann, W.Surf.

6 Feb 2014: 4.1 Switch-Pitch Structure with Point Group Symmetry dT. As shown in Figure 3, this switch-pitch structure consists of 16 nodes and 24 members. ... Γ||(e) 24 0 0 0 2. Γf 48 0 0 0 4.

2 Jul 2008: 12 14 16 18 20 22 24. 20. 40. 60. 80.

2 Sep 2016: Phys. Rev. B:Condens. Matter Mater. Phys. 2009, 80 (15), 155418.(24) Gillen, R.; Mohr, M.; Maultzsch, J. ... Phys. Rev. Lett. 2000, 85 (24), 52145217.(43) Piscanec, S.; Lazzeri, M.; Mauri, F.; Ferrari, A.

16 Jun 2021: ount. s). 0. 6. 12. 18. 24. x20. x4. x1. Fig. ... Nat. Mater. 13, 247–252 (2013). 24. Byrnes, T. et al. Exciton-polariton condensates.

14 Apr 2009: D peak: the 2Dpeak.18 This lies at 2690 cm1 and involves phonons atK q.18,24 q depends on the excitation energy, due todouble resonance, and the linear dispersion of ... Lett. 91, 233108 2007.24 A. C. Ferrari, Solid State Commun. 143, 47 2007.25 A.

8 Dec 2008: From the average output power andrepetition rate, the energy per pulse is 24 pJ. ... Received 19 May 2008; accepted 24 September 2008;. published 2 November 2008.

6 Feb 2023: spectral emission via adaptive opticalpumping.[ 24 ]. Spontaneous mode-locking in RLs was theoreticallypredicted.[ 18,25 ] The complex tunable optical pumping of alaser dye[ 25 ] was exploited to promote the transition of ... Through a combination of

18 Oct 2016: Nat. Nanotechnol. 9, 257–261(2014). 24. Withers, F. et al. Light-emitting diodes by band-structure engineering in vander Waals heterostructures.

13 Nov 2006: Peng et al. [24] reported a root. mean square (rms) roughness of 0.11 nm in a-C:H deposited. ... Technol. 174–175 (2003) 1135. [24] X.L. Peng, Z.H. Barber, T.W. Clyne, Surf.

19 Jan 2017: Inte. nsity. (Cou. nts. per. s). (Degrees) (Degrees). (Degrees)19 20 21 22 23 24. ... Rev. Lett. 108, 147001 (2012). 24. Kotov, V. N., Uchoa, B., Pereira, V.

27 Nov 2006: Fig. 2b shows the G peakdispersion of HCA(t)a-C:N films against N content.Here the G dispersion decreases from 0.24 to 0.1cm ynm, with increasing N ... b). This can be understood if we consider the crosssectional structure of ta-C filmsw13,24,25x.

7 Apr 2020: Carbon Nanomembranes. Advanced Materials 28, 6075–6103, https://doi.org/10.1002/. adma.201506058 (2016). 24. Woszczyna, M.

22 Nov 2006: obtained here compared to previous films produced by the. small ECWR [24] can be explained by the relatively high. ... 24] A.C. Ferrari, J. Robertson, M.G. Beghi, C.E. Bottani, R. Ferulano, R.

22 Jan 2007: 800 cm21!24 Although the origin of these structures is still amatter of debate, the disorder of as p2 carbon network ismost likely responsible for the observed spectra. ... TaucPle-. num, London, 1974!33D. A. G. Bruggeman, Ann. Phys.Leipzig! 24, 636

13 Nov 2006: corresponding bulkmaterial.24 However, an increasing temperature softens theE2g phonons,25 whereas we observe a hardening of the Ramanline in the nanotube-rich areas, Figure 3a. ... 24) Piscanec, S.; Cantoro, M.; Ferrari, A. C.; Zapien, J. A.; Lifshitz, Y

9 Jun 2021: We perform Raman mea-surements at 785 nm, the available Raman wavelength closest tothat used in HAMR (830 nm25,55), with a spot size 1.24 μm, asdetermined by the razor ... 75 on a 0.24 cm2. area, is investigated using an electrochemical corrosionmethod51

27 Feb 2016: light detected in an experiment, γ (see Figure 5). This dependson the collection angle:24. ... Phys. Rev. Lett. 2001, 87, 023901.(24) Böhmler, M.; Hartmann, N.; Georgi, C.; Hennrich, F.; Green,A.; Hersam, M.; Hartschuh, A.

13 Nov 2006: like,thick CNFs at temperatures as low as 200 C [24]. ... Phys. 44 (2005) 1558. [24] M. Cantoro, S. Hofmann, et al.

3 Jul 2015: 0.24 6 0.08 4000 6 10 380 6 5 395 6 5 15 6 10. ... 0.24 6 0.06 2000 6 10 362 6 10 304 6 10 58 6 20.

1 Aug 2011: For the. FAM-DNA-SWNT conjugate sample in Figure 1, this yields aconcentration of surface-bound FAM-DNA of 24 nM. ... the corresponding transitions from23,24. f 4ε0c2me lnð10ÞNAe20. ZεðνÞ dν. where ε0 is the free space permittivity, c is the

17 Aug 2023: large nonlinear optical response12,22 with a power transmissionmodulation of 50% per monolayer,911,21 ultrafast photo-excitation dynamics and recovery time,22,23 high chemical andmechanical stability,24 large ... EF. The conductivity has the typical

2 Feb 2018: ps) to impulsively generate a strongly out-of-equilibriumdistributions of hot e–h pairs4,8,23,24. ... Phys. Rev. B80, 121403 (2009). 24. Breusing, M. et al. Ultrafast nonequilibrium carrier dynamics in a singlegraphene layer.

18 Oct 2016: The red dot denotesMRðγ 0.8; lGsf 85 μmÞ 3.0% for the experimental valueof RP 24.8 MΩ. ... Rev. B 64, 184420 (2001).[24] C. Gould, C. Rüster, T. Jungwirth, E.

25 Sep 2013: 34(8), 695–697 (2004). 24. E. A. Anashkina, A. V. Andrianov, M. ... Express 20(24), 27102–27107 (2012). 25. V. A. Kamynin, A. S. Kurkov, and V.

1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors.