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20 Nov 2006: DFTcalculations are done with the gradient corrected functionalof Ref. [24]. We use plane waves (40 Ry cutoff ) andpseudopotential approaches [25]. ... 24] J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev.

27 Nov 2006: Fig. 2b shows the G peakdispersion of HCA(t)a-C:N films against N content.Here the G dispersion decreases from 0.24 to 0.1cm ynm, with increasing N ... b). This can be understood if we consider the crosssectional structure of ta-C filmsw13,24,25x.

13 Nov 2006: Peng et al. [24] reported a root. mean square (rms) roughness of 0.11 nm in a-C:H deposited. ... Technol. 174–175 (2003) 1135. [24] X.L. Peng, Z.H. Barber, T.W. Clyne, Surf.

14 Dec 2006: Barborini et al.r Chemical Physics Letters 300 1999 633–638 637. w xcoordination 24,25.

22 Nov 2006: obtained here compared to previous films produced by the. small ECWR [24] can be explained by the relatively high. ... 24] A.C. Ferrari, J. Robertson, M.G. Beghi, C.E. Bottani, R. Ferulano, R.

13 Nov 2006: like,thick CNFs at temperatures as low as 200 C [24]. ... Phys. 44 (2005) 1558. [24] M. Cantoro, S. Hofmann, et al.

13 Nov 2006: corresponding bulkmaterial.24 However, an increasing temperature softens theE2g phonons,25 whereas we observe a hardening of the Ramanline in the nanotube-rich areas, Figure 3a. ... 24) Piscanec, S.; Cantoro, M.; Ferrari, A. C.; Zapien, J. A.; Lifshitz, Y

11 Dec 2006: Fisica and Unitaa INFM, Politecnico di Torino, Corso Duca degli Abruzzi 24, I-10129 Torino, Italyb Dip.

6 Dec 2006: 85 (av.) 31.4 (av.) 3.24 63.5ta-C:H Homog. 70 28.4 2.35 70 6 30ta-C:H Homog 70 28.4 2.35 43 8.4 ... cm3and a internal layer 63.5 nm thick, with density of3.24 g/cm3[ 12].

13 Nov 2006: Nominally sub-eutectic NW syn-thesis using Au as catalyst has been achieved for severalsemiconductor materials, including Ge [22], InP [23], andZnSe [24]. ... 5, 761 (2005)24 A. Colli, S. Hofmann, A.C. Ferrari, C. Ducati, F.