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14 Mar 2014: 24 by controlling the electric field intensity in SLG on a high-reflection mirror. ... 24. ai 3Ea). À/4 Si02. À/8 Si 02. À/12 Si02. no Si02.

6 Feb 2014: 4.1 Switch-Pitch Structure with Point Group Symmetry dT. As shown in Figure 3, this switch-pitch structure consists of 16 nodes and 24 members. ... Γ||(e) 24 0 0 0 2. Γf 48 0 0 0 4.

27 Feb 2014: Voss E, Overend M, Stevens W. 'A building information modelling-based tool for heuristically assessing facade manufacturability', Proceedings of the IASS Annyal Symposium, Seoul, South Korea, May 21-24, 2012.

4 Sep 2014: 24,12 While bulkMoS2 is a semiconductor with an indirect band gap of 1.3 eV,. ... E.; Heinz, T. F.; Hone, J.; Ryu, S. ACSNano 2010, 4 (5), 26952700.(24) Zhang, X.; Han, W.

6 Feb 2014: received 24 May 2013; accepted in final form 17 June 2013published online 2 July 2013. ... Γ(Tx,Ty) 2 1 1 2 0 0= 24 0 0 0 0 0.

27 Feb 2014: 15,0 15,3 13,7 19,7. 31,0 33,4 31,7 8,8. 19,5 24,0 23,2 11,7. ... 36,6 30,3 37,4. 18,3 24,6 21,7. 17,6 19,0 17,3. C1 C2 C3 C4.

21 Aug 2014: 24, pp. 3025–3027,2008. [3] S. Kobtsev, S. Kukarin, and Y. Fedotov, “Ultra-low repetition ratemode-locked fiber laser with high-energy pulses,” Opt. ... Mater., vol. 20, no. 21, pp. 4040–4043, 2008. [24] T. Hasan et al., “Nanotube–polymer

3 Feb 2014: CB. [C2. B2 C. A. ]0.5(24). nserting the smallest root back into Eq. ... The corresponding F/V ratios are giveny Eq. (24) and, after some manipulation, it can be shown that:.

14 Mar 2014: due to various processes [27, 28], including carrier-carrier and carrier-phonon scattering, as well as radiative electron-hole recombination (non-linear photoluminescence [24, 43, 44]). ... 24] F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari,

6 Feb 2014: The unit cell contains 24 joints and 72 bars, andscalar counting using (2.1) gives m s = 3. ... 2006 The flexibility window in zeolites. Nat. Mater. 5, 962–965. (doi:10.1038/nmat1784)24.