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Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon…
www-g.eng.cam.ac.uk/nms/publications/pdf/Casalinos.pdf4 Dec 2017: We get a wavelength-dependent photoresponsewith external (internal) responsivity 20 mA/W (0.25A/W). ... Figure 9plots NEP as a function of VR. For VR = 10 V, Rext 20 mA/W,. -
Terahertz saturable absorbers from liquid phase exfoliation of…
www-g.eng.cam.ac.uk/nms/publications/pdf/Bianchi.pdf20 Jun 2017: ARTICLE. Received 20 Feb 2017 | Accepted 26 Apr 2017 | Published 15 Jun 2017. ... 20. 30. 40. 50. 60. 70. 80. 30 40 38 36 34 32. -
Graphene-based mid-infrared room-temperature pyroelectric bolometers…
www-g.eng.cam.ac.uk/nms/publications/pdf/Sassi17.pdf1 Feb 2017: nt (. uA). 20.0 C. 20.2 C. 10 mV. Vg. 10–6. ... 6b) using optical lithography and dryetching in O2 (20 W for 20 s). -
p-wave triggered superconductivity in single-layer graphene on an…
www-g.eng.cam.ac.uk/nms/publications/pdf/Bernardi.pdf19 Jan 2017: Inte. nsity. (Cou. nts. per. s). (Degrees) (Degrees). (Degrees)19 20 21 22 23 24. ... 20. Nandkishore, R., Levitov, L. S. & Chubukov, A. V. Chiral superconductivityfrom repulsive interactions in doped graphene. -
Spider silk reinforced by graphene or carbon nanotubes
www-g.eng.cam.ac.uk/nms/publications/pdf/Lepore.pdf22 Aug 2017: 20 June 2017. AC C E P T E D F OR P UBL IC AT IO N. ... 2D Mater. 4 (2017) 031013. 4. for 2 h (450 kW at 20 kHz). -
Spider silk reinforced by graphene and carbon nanotubes-Supplementary …
www-g.eng.cam.ac.uk/nms/publications/pdf/SILepore.pdf4 Dec 2017: In the low frequency region,. the Radial Breathing Modes (RBMs) are observed [20]. ... shifted with respect to the semiconducting counterpart [20, 37]. Thus, a wide, low frequency G- is a. -
Graphene and Related Materials for Resistive Random Access Memories
www-g.eng.cam.ac.uk/nms/publications/pdf/Hui.pdf20 Jun 2017: Scale bar = 20 µm. c) Endurance measured from one of the crossbar devices using 5 and 14 V as set and reset voltages. ... reset). 80% No [192]. ITO/SLG/ZnO/ITO CVD. (Transfer)200 µm. in diameter. 20 – 104 >100 – – Yes No [74]. -
Weak localization in electric-double-layer gated few-layer graphene
www-g.eng.cam.ac.uk/nms/publications/pdf/Gonnelli_2017_2D_Mater._4_035006.pdf3 Aug 2017: We find a small (1.5%), gate tunable, upturn in the sheet resist ance, RS, below 20–30 K. ... This is consistent with the present observation of a dominant Nyquist contribution for T < 20 K.
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