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28 Nov 2006: APPLIED PHYSICS LETTERS VOLUME 81, NUMBER 20 11 NOVEMBER 2002. Bonding and mechanical properties of ultrathin diamond-like carbon filmsM. ... 3805Appl. Phys. Lett., Vol. 81, No. 20, 11 November 2002 Beghi et al.

28 Feb 2006: 0. 20,000. 40,000. 60,000. 80,000. 100,000. Austr. alia. Cana. da USA UK. ... UK domestic water use. 9% 6%14%. 8%. 8%. 20%. 35%. Potable quality water required only for those applications.

20 Feb 2006: Miscellaneous. 2001. 35. 14. 6. 8. 7.7. 20. 9.3. 1990. 32.

8 Dec 2006: Phys. D 20 (1991 ) 417–420.col can positively address the quantitative evalua-. [ ... Nemanich, S.A. Solin, Phys. Rev. B 20 ( 1979 ) 392.to be used, and a phenomenological approach is [ 8] F.

14 Dec 2006: Experimental and theoretical investigations find that small carbon clusters (< 40 atoms)have chain or ring structures [20, 21], whereas larger clusters as used here tend to form three-dimensional, cage-like ... No macroscopic surfacedamage was found on

13 Nov 2006: almost double that of the 2D peak of grapheneand up-shifted of 20 cm1. ... Rev. B 66, 035415 (2002).[20] P. Lespade et al., Carbon 22, 375 (1984).[21] A.

28 Nov 2006: The self-bias resultsin an ion energy of about 20–40 eV [7,15]. ... The brackets denote spatial average.For self-affine structures, Hr; t behaves asymptoticallyas [20].

13 Nov 2006: Redistribution subject to. spot is 1 – 2 mm in diameter and approximately 20 – 50 mthick, as observed by atomic force microscopy. ... We assume the wire to be in contact with 20 other wires onecontacting wire of 15 nm diameter every 50 nm and a

22 Nov 2006: The correlation of optical and mechanical properties in. hydrogenated samples for 20 at.%bHb50 at.% is further. ... content between 20% and 50%. All the relevant properties. are to first approximation determined only by the H content.

13 Nov 2006: Received 10 July 2006; accepted 1 September 2006; published online 20 October 2006. ... vacuum arc FCVA,19 another by S-bend FCVA,20 and oneby filtered high current pulsed arc HCA.21 All films weredeposited on silicon.