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1 - 10 of 28 search results for KaKaoTalk:vb20 200 |u:www-g.eng.cam.ac.uk where 0 match all words and 28 match some words.

  1. Results that match 1 of 2 words

  2. Microsoft PowerPoint - COSMOS_MHS

    www-g.eng.cam.ac.uk/cosmos/COSMOS_MHS.pdf
    17 Oct 2008: a). (c). (b). (d). TE0. TE1. 50 100 150 200 250. ... 440. 450. 460. 470. 480. 490. 500. 50 100 150 200 250.

  3. Nanoscale freighter hauls its first load - tech - 10 April 20...

    www-g.eng.cam.ac.uk/nms/highlights-press/NSfirstload.pdf
    11 Apr 2008: The central tube is one micrometer long and acts as a rail forthe second, smaller, 200-nanometre nanotube.

  4. Microsoft PowerPoint - COSMOS_wavelengthtuning

    www-g.eng.cam.ac.uk/cosmos/COSMOS_wavelengthtuning.pdf
    17 Oct 2008: The Concept. 0 5 10 15 200. 10. 20. 30. 40.

  5. Delivered by Ingenta to:Dublin City University IP : 136.206.1.20Thu,…

    www-g.eng.cam.ac.uk/nms/publications/pdf/King_JNN2008.pdf
    17 Jul 2008: Figure 4 shows the PL of the nanostructures for excita-tion at 200 nm. ... PL of each sample in the region 200–900 nm is displayed inFigure 4.

  6. phb79554d_550

    www-g.eng.cam.ac.uk/nms/publications/pdf/Scheel_PSSb2008.pdf
    2 Oct 2008: 200 300 400 500 600 700 800 900Temperature (K). 100. 200. ... m-1. ). 0 50 100 150 200 250 300 350T (K).

  7. Nanowire Lithography on SiliconAlan Colli,† Andrea Fasoli,‡ Simone…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_NL2008.pdf
    21 May 2008: h) SEM micrograph of a monolithic Sijunction with overlapping NW masks (gray ) SiO2; blue ) Si).Scale bar is 200 nm. ... The current flowing throughthe NW is about 2 orders of magnitude lower than thatflowing through the 200 times wider channel of the

  8. nnano.2008.312 738..742

    www-g.eng.cam.ac.uk/nms/publications/pdf/Wang_NNANO2008.pdf
    8 Dec 2008: 1,000 1,200. Wavelength (nm). Er3+ iongain bandwidth. 1,400 1,600 1,800 2,000. ... et al. Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker.

  9. L-band ultrafast fiber laser mode locked by carbon nanotubesZ. ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Sun_APL2008.pdf
    20 Aug 2008: 214.199 214.200 214.201 214.202. -120. -100. -80. -60. -40. -20. Inte. ... 0 200 400 600 800 1000-80. -60. -40. -20. 0. (b).

  10. doi:10.1016/j.physe.2007.11.034

    www-g.eng.cam.ac.uk/nms/publications/pdf/Hu_PE2007.pdf
    27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device

  11. A new solution to graphene production : SPIE Newsroom: SPIE.org

    www-g.eng.cam.ac.uk/nms/highlights-press/graphene_production_SPIE.pdf
    30 Nov 2008: 7065, pp. 197-200, 2005. 3. S. V. Morozov, K. S. Novoselov, M.

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