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5 Nov 2008: range (1550 nm), as discussed below. Moreover, it has a lowglass-transition temperature (Tg 85 8C), decomposes in airjust above 200 8C,[20,21] and absorbs large amounts of moisturedue to ... which they generated 200 fs pulses at 1560 nm, amongst

27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive

27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm).

5 Sep 2008: Concentration (µg ml–1). 1,000 1,200 1,400. γ = E sur – TSsursolsol. ... Distance (Å–1). Inte. nsity. (a.u. )In. tens. ity (a. u.). 200.

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

20 Feb 2008: Our final val-ues, corresponding to B, 450 GPa, are Ebulk. 5 750– 790 GPa, Gbulk5 300– 395 GPa, Esurf5 200– 300GPa, andGsurf5 70– 150 GPa.

2 Jul 2008: 250 300 350 400 450100. 150. 200. 250. E [GPa]. ν = 0.

4 Nov 2008: water, and 7 dry at 200 Cand store in a nitrogen dry-box. ... 10 100Vgate (V). 200.000.040.080.12. Cond.(e2 /h). semiconducting. 0.2. 0.3. 0.4. -10 100Vgate (V).

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

26 Jun 2008: 1(b)] are grown using a dc PECVDsystem from a gas mixture of C2H2 (50 sccm) and NH3(200 sccm) at 0.7 mbar pressure.