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18 Jun 2021: 1. Supplementary Figures. 0 4 8 12 16 200. 5000. 10000.

23 Mar 2021: has EF 200 meV, as extracted from Raman experiments. Figure S3: ( ) in units of universal conductance G0 = e2/4h = 6.0810. ... 5 S, for EF=50 meV (red), 200 meV (black) and. 300 meV (blue).

9 Jun 2021: 6, whichplots both values as a function of VGS for VDS = 200 mV. ... Red curve: cut of Fig. 5c forVDS = 200 mV. Blue curve: cut of Fig.

12 Apr 2021: Bulk PTMCcrystals are mechanically exfoliated onto a 200 nm layer of poly-(propylenecarbonate) (PPC), spin coated onto a Si wafer and identied using opticalmicroscopy.20 Selected PTMC akes are then picked ... 002ð1Þ at 200 cm1 and A. 01ð2Þ at

1 Jul 2021: Ergoktas and colleagues tested the endurance in THz, infrared and visible ranges, showing that the devices can operate for over 11,000, 2,200 and 580 on/off cycles in these

18 Jun 2021: Coupling to the resonator occurs through a 200 nmgap via a single bus WG, Fig. ... In both systems thesame amplifier is employed to obtain a >200 mV output voltageswing (VOUT), as required for driving the subsequent clock anddata recovery CMOS circuit.

9 Jun 2021: Ag/Zr0.5Hf0.5O2:GOQDs/Ag 10000 0.8 200 µA / 160 µW 3000 µA / 2.4 mW 30 S33.

26 Apr 2021: ExperimentalFittingS2p3/2S2p1/2Defects component. 200 µm. Fig. 2 | Characterization of MS2 films and networks. ... 0 200 400 600 800 1,000 1,200 1,400 1,600–45. –42. –39.

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

15 Feb 2021: We investigate mechanically exfoliated 1L-MoSe2 on a 200-μmfused silica substrate (see Methods for details). ... This is performed with polydimethylsiloxane(PDMS) and, after inspection under an optical microscope, 1L-MoSe2 is drytransferred in ambient