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10 Apr 2007: S. et al. Nature 438, 197–200 (2005).3. Zhang, Y., Tan, Y.-W., Stormer, H.

27 Mar 2007: For example, Erlandsson et al. [24,25] reportedsignificant restructuring of 0.5 nm thick Pd films (meltingand Huetting temperatures of 1554 and 275 1C, respec-tively) at 200 1C when subject

27 Mar 2007: NW are typically 50 nm in diameter [8]). The NRDdiameter (100–200 nm) is also much larger than the sizeof the original CdSe colloids (5 nm).

28 Aug 2007: Sonication is carried out in a 200 W, 20 kHz sonication bathBioruptor; Diagenode for 1 h, before intense ultracentrifu-gation for 30 min at 30 000 rpm Beckman, Optima MAX-E. ... Medium integration and a delay of 200 ms areused to ensure that no transient

10 Dec 2007: Thus, the static and the dynamic models predict. 4. 0 100 200 300 400 500 600 700 800.

27 Dec 2007: The vertical scale is. magnified 200 times compared with the horizontal scale. ... 280 30 38.5 40.0 39.6. 200 30 38.5 40.7 40.5. 120 32 38.7 42.7 43.0.

8 Jan 2007: density limit was approximately 40 Gbits/in2. This was increased to. 200 Gbits/in2 by reducing the bit-aspect ratio to four and by using. ... of 200-500 W to deposit the films87. This allows a high deposition rate.

18 Dec 2007: Three-terminal FETs arefabricated by dispersing SiNWs on a 200-nm-thick SiO2layer thermally grown on a degenerate p-doped Si wafer,used as backgate. ... Here, the total pressure isconstant at 200 mTorr. At this pressure pure thermal growthis ineffective,

12 Dec 2007: 0.05. 0.05. z (mm). -200 200 σx (N/mm2). (a). -0.05. 0.05. ... 200 200. z (mm). σy (N/mm2). (b). Fig. 16. Predicted stress distribution in test case 3, after forming.

22 Jun 2007: 8. (a). G peak position as a function of electron concentration at 200 K. ... phononenergy. (b) FWHM(G) at 200 K as a function of electron concentration.