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28 Nov 2006: An unusual aspect of these films is thata-C:N depos-ited above 200 C can become nanostructured, with a strcrosslinking between graphitic planes, which gives ancrease in mechanical hardness and ... An average of 200 scans per sample were taken wpurging

27 Nov 2006: The optical properties were investigated by opti-cal absorption spectroscopy using an ATI UnicamUV2-200 UV–Vis spectrophotometer over the 200–1100 nm wavelength range. ... of curvature measured both before and after depositionusing a Tencor

13 Mar 2006: 0. 100. 200. 300. 400. 500. 600. 1952. 1954. 1956. 1958.

6 Dec 2006: 150 C, 200 C, 250 C, and 300 C at various nitgen pressures. ... Above 200 Cconductivity becomes almost independent of N contentits dependence on temperature declines.

23 Nov 2006: The scalebar is 200 nm. A smallcatalyst particle is found at all tips, determining the wire diameter.((b), (c)) HRTEM images of the NWs shown in (a).

13 Nov 2006: Then, pure SiH4was admitted as the Si source gas, the total pressure vary-ing between 200 mTorr and 10 Torr. ... arrow). Scale bar: 1 µm. much thicker (200–300 nm) and tapered, indicating that Siovergrowth on the NW side walls also occurred during

6 Dec 2006: 8 ] with a different bias: 290, 200, 80 V, floating sp2 bonds are counted independently of their orientation[ 20 ]. The standard analysis [ 8,18,19 ] was then employedpotential, 10 V. ... ta-C 290 V 2.860.02 ( bulk) Layered 7 76ta-C 200 V 3.030.02 ( bulk)

2 Jun 2006: The lower value is appropriate for crops, the higher value for wood.) Thus, a good energy harvest is about 200 to 300 GJ/ha-y.

7 Jun 2006: China 1 088 349 289 489 1 264 764 000 0.229India 480 418 200 781 1 000 161 000 0.201.

6 Dec 2006: 11, 13 March 2000 Chhowalla et al. 6 5% for films deposited below room temperature up'200 C, above which there is a sharp transition from 8to ;0% s p3 bonding