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7 Apr 2020: These include high-speed (>200 GHz56) operation,57 broad-band (ultraviolet to far-infrared) absorption,5860 efficientoptical modulation (electro-optical index change Δneff >103),31 CMOS compatibility,41,61 and ... of the laser at 200 Hz.

20 Jul 2023: Monolayer (1L) transition metal dichalcogenides(TMDs) are interesting for optoelectronic1 andelectronic2 applicationsdueto theirdirectbandgap,3high room temperature mobility4 (200 cm2 V1 s1), strongexcitonic binding energy5 (>200 meV), and valley

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

26 Jun 2008: 1(b)] are grown using a dc PECVDsystem from a gas mixture of C2H2 (50 sccm) and NH3(200 sccm) at 0.7 mbar pressure.

28 Nov 2006: 1b). This is relevant for the present study since themagnetron sputtered samples(sets 1, 2) were depositedat T;200 8C and with an N content of;6 at.% N,whilst the

7 Jan 2021: HBN-Encapsulated, Graphene-based, Room-temperature TerahertzReceivers, with High Speed and Low NoiseLeonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, and Miriam S. Vitiello. Cite This: Nano Lett. 2020, 20, 31693177 Read Online.

27 Nov 2006: Robertson. 0. 100. 200. 300. 400. GT1060 cm1. 633 nm. 514.5 nm. ... 0. 100. 200. 300. 80 100 120 140 160. 1.0. 1.5.

14 Mar 2014: organic vapor phase epitaxy (MOVPE, AIXTRON AIX 200/4) as described in [47]. ... The pump laser is coupled into a 200 µm fiber. Fig.

18 Oct 2016: RESULTS. Figure 1a plots a schematic drawing of our PDs. We fabricated4 PD arrays with 10 devices each, with channel lengths of 100μm, 200 μm, 500 μm, and 1 mm. ... Scale bar is 200 μm. ACS Nano Article. DOI: 10.1021/acsnano.6b05109ACS Nano 2016, 10,

22 Nov 2013: hexagons 100 to 200 times faster than it can move through silicon7.

6 Jan 2017: a). 0 200 4000. 0.02. 0.04. 0.06. d / t. F / E. ... t2. (b). 0 200 400 6000. 0.05. 0.1. d / t.

20 Jul 2020: It is then placedon a 200 μm fused silica (FS) substrate using wet transfer.3537. ... For all pump excitations, thetemporal duration is <20 fs and the bandwidth range between100 and 200 meV.

7 Apr 2020: Amicrographite with a particle size distributiond50 = 1723 μm(SGA 20 M 99.5; AMG graphite, Hauzenberg, Germany) was used toprepare TRGO with a particle size distribution between 5 and 200 μm.

4 Feb 2014: Bandgap engineering is usually attempted by patterning into graphene nanoribbons (GNRs) (24,11), but GNRs tend to have low mobilities (<200 cm2V1s1) (27) as a consequence of carrier scattering on disordered ... Although these inverters pave the way to

20 Jun 2012: We considera pulse centred at 1060 nm with a time window of 200 ps divided into 212 points and a dopedfibre with length 0.9 m, dispersion β2 = 0.018. ... 0. 2. 4. 6. 8. 10. 12. 14. 0 100 200 300 400 500 600 700.

27 Nov 2006: This is partic-ularly important for magnetic disk deposition since thefilms are usually grown at;200 8C, which can favourthe decoupling of the sp clustering from the sp content2 3.

30 Mar 2023: 68,131] outstanding compared to RS based on SiOx[61] and metal oxides.[199,200] Previous experiments demon-strated that metal oxides, such as HfO2 and CuO, do not offer the ... c) I–V curves applying pulsed voltage stresses to an

22 Aug 2017: The dispersions are ultracentrifuged using a TH-641 swinging bucket rotor in a Sorvall WX-100 at 200 000 g for 2 h at 18 C to remove bundles and other ... This could be due to the shape of the flakes. The lateral characteristic dimen-sions of our flakes

22 Nov 2006: 200 300 400 500 600 700 800. 1450. 1500. 1550. 1600.

28 Jun 2013: such as PEG-200 (viscosity, η, 60 mPas; density, ρ, 1.12 g/. ... Figure 7. AuNPs sorted in (a) water/PEG-200 and (b) water/glycerol gradients.

18 Dec 2007: Three-terminal FETs arefabricated by dispersing SiNWs on a 200-nm-thick SiO2layer thermally grown on a degenerate p-doped Si wafer,used as backgate. ... Here, the total pressure isconstant at 200 mTorr. At this pressure pure thermal growthis ineffective,

27 Dec 2007: The vertical scale is. magnified 200 times compared with the horizontal scale. ... 280 30 38.5 40.0 39.6. 200 30 38.5 40.7 40.5. 120 32 38.7 42.7 43.0.

27 May 2008: The voltage level we typically use is on theorder of 150–200 V, with pulse duration of 37 ms.

8 Jan 2007: density limit was approximately 40 Gbits/in2. This was increased to. 200 Gbits/in2 by reducing the bit-aspect ratio to four and by using. ... of 200-500 W to deposit the films87. This allows a high deposition rate.

18 Oct 2012: Hasan, F. Wang, and A. C. Ferrari, “Sub 200 fs pulse generation from a graphenemode-locked fiber laser,” Appl. ... 10-3. 10-2. 10-1. 100. -20 -10 0 10 200.0. 0.2. 0.4.

13 Nov 2006: The synthesis of the SW-BNNT used in this study isdescribed elsewhere.4,5 The collected synthesis products arestudied by HRTEM, using Philips CM20 (200 kV) and JEOL4000FX (400 kV)

26 Jan 2021: This, in principle, could impact thecurrent. However, the graphene surface in contact with theelectrolyte is very small, with a ratio between the twosurfaces1/200.

15 Oct 2009: 90, No. 10, 15 November 2001 Chhowalla et al. ratio of 75:200 sccm at2 600 V and 700 C. ... 1. Standard growth conditionsbias voltage5 2 600V, C2H2 :NH35 75:200, time515 min!

16 Jun 2021: 3. 100 200 300 400 500Raman shift (cm-1). Ram. an in. ... 10. nanopillar site before and after it is addressed with a maximum excitation power of 200 µW,.

1 Jun 2020: Photothermoelectric and Photoelectric Contributions to LightDetection in MetalGrapheneMetal PhotodetectorsT. J. Echtermeyer,† P. S. Nene,† M. Trushin,‡ R. V. Gorbachev, A. L. Eiden,† S. Milana,† Z. Sun,†. J. Schliemann, E. Lidorikis, K.

15 Aug 2008: By using an acousto-optic-modulator (AOM) at frequencies higher than 200 kHz, even better SNR could be achieved, but at the price of a reduced temporal resolution, due to

25 Mar 2010: 4: (Circles) Output pulse duration; (squares) time-bandwidth product. 0 200 400 600 8000.0.

28 Nov 2006: Corning glass by transmission and reflection measure-ments using an ATI-Unicam UV2-200 spectrometer inthe range 300–1100 nm.

30 May 2013: In strained graphene nanobub-bles, it was reported that Bstr can reach 200–400 T [29].In nominally unstrained SLG, the residual strain causedby nm-scale height variations and defects can

28 Nov 2006: Aboveapproximately 200 nm the surface peaks disappear(seeFig. 2). In the thickest films(above 1mm) only thecentral peak and, sometimes, strongly damped bulkacoustic phonons, with a typical wavelengthl ;200phnm, have been

27 May 2016: kE q V. h E kT. qE. qV. cos ( / ). exp exp. TFE 00 RB. 200. B. 0. R. (1). where A is the effective Richardson constant, k is theBoltzmann constant, T

7 Jun 2006: China 1 088 349 289 489 1 264 764 000 0.229India 480 418 200 781 1 000 161 000 0.201.

13 Nov 2006: Scale bars in the insets are (a) 200 nm;(b) 20 nm.

2 Feb 2016: The BM-GBS shows a sub-micrometric morphology, with the lateral dimensions of the flakes<200 nm (Figure 3b).Following the structural characterization, neuronal cultures. ... Ethyl acetatesolution of functionalized MWNTs (0.1 mg/mL) is sprayed on

27 May 2008: 3(c) is found to be. ARTICLE IN PRESS. PL inte. nsity (. arb. units). 0. 50. 100. 150. 200. Wavelength (nm). 900 950 1000 1050 1100 1150 1200.

22 Jul 2022: The beam isfocused by two TPX lenses onto a 200 lm radius circular spot.

16 Dec 2021: False color SEM images show two GPDs. (c,d) Antenna simulations showing the field enhancementwith respect to the antenna dimensions, for w = 200 nm. ... https://doi.org/10.1021/acsnano.1c06432ACS Nano 2021, 15, 1796617976. 17973. smaller than the GFET

5 Jun 2014: 7b. These aggregates having a height rangingfrom 60 to 200 nm and a width spanning from 0.6 to 2 mm, werefound to be randomly distributed within the polymer matrix.Their ... Experimental sectionMaterials. Poly(3-hexylthiophene) (P3HT) (Fig. 1b)

7 Nov 2013: 3. 4. 5. Dis. tanc. e (μ. m). zx. 0 200 400Force (fN). ... a. Displacement (nm)0 200 400 600 800 1,000 1,200 1,400. Dis.

20 Aug 2008: The resulting NWs have a relativelythick (5-10 nm) oxide shell surrounding a crystalline Si core10-20 nm in diameter.14 After synthesis, the SiNWs aremechanically transferred onto a 200 nm

22 Aug 2014: Hasan, F. Wang, and A. C. Ferrari, "Sub 200 fs pulse generation from a graphene mode-locked fiber.

27 Mar 2023: b). 200 250. B3g. B1g. LPE BP. Ground BP. Bulk BP. ... a). -40 -20 0 20 40. 100. 200. 300. 400. Vds = 0.5 V.

24 May 2013: II). We find that the Raman scat-tering efficiency of the G peak [dS/d(G)] is 200 105m1 Sr1 at 2.41 eV. ... Eq. (12) we get dS/d(G)SLG 200 105 m1Sr1 anddS/d(G)(2D)SLG 1580 105 m1Sr1.

21 Jun 2010: AntiAliasColorImages false /CropColorImages true /ColorImageMinResolution 150 /ColorImageMinResolutionPolicy /Warning /DownsampleColorImages true /ColorImageDownsampleType /Average /ColorImageResolution 200 /ColorImageDepth -1 ... Quality 10 >>

15 Oct 2012: This study uses a relatively large model in a scale of 1:10, in contrast to common wind tunnel scales of 1:200 to 1:400.