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21 Dec 2015: The depolarizationdynamics, measured at 77 K, exhibits a peculiar biexponential decay, characterized by two distinct time scalesof 200 fs and 5 ps. ... The faster dynamics is τfast = 200 10 fs while theslower is τslow = 4.8 0.2 ps.

15 Jun 2006: 200,000 tonnes of plastic rubbish is being sent 8,000 miles to China each year for recycling. ... MJ/kg] 14 80 84 200 23Energy/Volume. [MJ/litre] 8.2 3.2 5.4 9.0 2.4.

5 Sep 2018: Scale bar: 200 µm. 1801599 (3 of 8). www.advancedsciencenews.com. 2018 WILEY-VCH Verlag GmbH & Co.

24 Apr 2009: e-mails: mfuhrer@umd.edu;adam1@umd.edu. 1. Novoselov, K. S. et al. Nature 438, 197–200 (2005).2.

10 Dec 2007: Thus, the static and the dynamic models predict. 4. 0 100 200 300 400 500 600 700 800.

13 Mar 2006: 0. 100. 200. 300. 400. 500. 600. 1952. 1954. 1956. 1958.

13 Nov 2006: We use polished, 0.01-0.02 cm boron-doped Si(100)wafers as substrates, covered with thermally grown SiO2(50-200 nm). ... The process temperature is indicatedfor each sample. Scale bars: 100 (b-d), 500 (e), and 200 nm (f).

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

9 May 2012: c). (d). Fe (1 nm)(10 nm). Vertical CNT forest. SiOx (200 nm). ... 200. 0. 0 200 400 600 800. 0.02. 0.015. 0.01. 0.005.

28 Nov 2007: scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (TEM). Three-terminals FETs are fabricated by dispersing SiNWs on a 200 nm thick SiO2 layer thermally grown.

26 Apr 2021: ExperimentalFittingS2p3/2S2p1/2Defects component. 200 µm. Fig. 2 | Characterization of MS2 films and networks. ... 0 200 400 600 800 1,000 1,200 1,400 1,600–45. –42. –39.

27 Nov 2006: The optical properties were investigated by opti-cal absorption spectroscopy using an ATI UnicamUV2-200 UV–Vis spectrophotometer over the 200–1100 nm wavelength range. ... of curvature measured both before and after depositionusing a Tencor

30 Nov 2008: 7065, pp. 197-200, 2005. 3. S. V. Morozov, K. S. Novoselov, M.

4 Apr 2011: b) (d). 200 nm 70 nm. pre-modificationpost-modification. G(μS). Vbg (V) Vbg (V)20 40 60 80 20 40 60 80. ... 200. 40. 60. 80100. 10. 0. 20. 30. (a) (c). FIG.

21 Mar 2016: First, off-stoichiometry or. partial relaxation can produce magnetically biaxial behaviour31. below 200 K. ... G) 8.2] ratios, we derive a doping level <200 meV.42,43 Aftertransfer, a background signal [Fig.

7 Apr 2020: To check this, we performed measurements of HT-2 with Au Biacore chips on a Biacore T-200, using the same protocol and achieved sensitivity1 ng/mL, as detailed in Supplementary ... A roadmap for graphene. Nature 490, 192–200,

28 Nov 2006: 0. 200. 400. 600. 800. 1000. 480 490 500 510 520 530 540. ... 0. 200. 400. 600. 800. A. Inte. nsity (. co. un.

2 Aug 2010: We first created a laserworking at the telecom window at 1550 nm and now we have lasers based ongraphene saturable absorbers that can produce 200-fs pulses as well as workover

20 Oct 2009: Despite the homogeneous schematisation of a probable densitygradient, the values Eit = 750-790 GPa, Gint = 300-395 GPa, Ext = 200-300 GPa, and Gext = 70-150 GPa could be determined. ... Ta-C:H Ta-C ta-csurf WWW-ta-C Diamond. E (GPa) 3004_9 757.547.5

7 Aug 2017: A stable, power scaling, graphene-mode-locked all-fiber oscillator. D. Popa,1,a) Z. Jiang,1 G. E. Bonacchini,1 Z. Zhao,1 L. Lombardi,1 F. Torrisi,1 A. K. Ott,1. E. Lidorikis,2 and A. C. Ferrari11Cambridge Graphene Centre, University of Cambridge,

15 Jul 2010: 0 200 400 600 800 1000 1200 1400. Phonon Frequency (cm ). 0. 0.002. 0.004. 0.006. 0.008. α F. ( ω)/. ω (. cm. ). -1. 8 % doping4 % doping. 2 % doping. ... 2 1 % doping. -1. TO CC stretching modes. 0 200 400 600 800 1000 1200 1400.

15 Oct 2009: This was achieved using an ATI Unicam UV2-200 UV-VIS spectrometer over the 185 to 910 nm wavelength range. ... Similar spec-tra were found for films deposited at ion energies of between 150 and 200 eV.

18 Oct 2016: Inte. grat. ed in. tens. ity. 0. 50. 100. 150. 200. ... Confocal microscopy. PL and EL measurements are performed using a home-built confocal microscopy mounted on a three-axis stage (Physik InstrumenteM-405DG) with a 5-cm travel range and

25 Jan 2021: b–d 532 nm Hot PL spectra of 1L-WSe2 at b 78 K, c 200 K, d 250 K. ... respectively. Thehot PL peaks are seen at 200 K, Fig. 2c, and a further increase inintensity is observed at 250 K, Fig.

20 Oct 2009: An a-C:H layerwas deposited with a PECVD system, at 200 W and 100mTorr pressure.

15 Oct 2009: 260 0. 9 C. 0 200 400 600 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 i8Incidenlt Pump Powr (m" Frequengy (GHz

10 Apr 2007: S. et al. Nature 438, 197–200 (2005).3. Zhang, Y., Tan, Y.-W., Stormer, H.

16 Dec 2021: b) jEi population plotted in orange circles as a function of ωR for Δ 0 and 200 mT magnetic field strengthapplied at 54.7 relative to the SnV symmetry axis. ... The solid curve is a two-Lorentzian fit resulting in an average linewidth of900(200) kHz

14 Jan 2019: Pos(G) and Pos(2D) varied by 5 cm1and 15 cm1 across 200 μm2. ... 0.4. 0.2. 0.0. 100. 150. 200. –1.0 –0.5 0.0 0.5 1.0 1.5.

27 Mar 2007: For example, Erlandsson et al. [24,25] reportedsignificant restructuring of 0.5 nm thick Pd films (meltingand Huetting temperatures of 1554 and 275 1C, respec-tively) at 200 1C when subject

23 Nov 2006: The scalebar is 200 nm. A smallcatalyst particle is found at all tips, determining the wire diameter.((b), (c)) HRTEM images of the NWs shown in (a).

28 Jul 2009: ON. SOR. TIA. UK. on. July. 28,. 200. 9Pu. blis. hed. ... on. July. 28,. 200. 9Pu. blis. hed. on J. une. 10, 2.

27 Mar 2007: NW are typically 50 nm in diameter [8]). The NRDdiameter (100–200 nm) is also much larger than the sizeof the original CdSe colloids (5 nm).

16 May 2023: alizedE-field. intensity. 30–10 0 10 20–200. 10. 20. y (µ. m). ... Current (mA)200 400300. Current density (A cm–2). 200 400 500. Volta.

4 Sep 2014: sweeping both top gates simultaneously at a drain-sourcevoltage VD = 200 mV. ... b) Electrical transfer characteristics of a 1L-MoS2 FET at biasvoltage VD = 200 mV.

24 Mar 2009: cooled down to 400 C while NH3 is still flowing, and then exposed to a 50:200 SCCM C2H2 : NH3 gas mixture 0.7 mbar for 40 min. ... the 200–300 nm Ni clusters are polycrystalline. The complexshape can result in more nucleation sites for nanofibergrowth.

5 Nov 2008: range (1550 nm), as discussed below. Moreover, it has a lowglass-transition temperature (Tg 85 8C), decomposes in airjust above 200 8C,[20,21] and absorbs large amounts of moisturedue to ... which they generated 200 fs pulses at 1560 nm, amongst

27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm).

23 Mar 2021: is 1.3 dB, in agreement with the expected THz optical losses of SLG for EF  200 meV (see Supporting Information). ... The RF spectrum analyzer settings are: RWB: 10 kHz, VBW: 100 kHz, SWT: 200 ms, RMS acquisition mode.

14 Jan 2010: The dynamics can be described by a triple-exponential with decay times40, 200, and 1000 ps. ... Two Dimensional Gas of Massless. Dirac Fermions in Graphene. Nature 2005, 438, 197–200.3.

13 Nov 2006: Then, pure SiH4was admitted as the Si source gas, the total pressure vary-ing between 200 mTorr and 10 Torr. ... arrow). Scale bar: 1 µm. much thicker (200–300 nm) and tapered, indicating that Siovergrowth on the NW side walls also occurred during

6 Dec 2006: 150 C, 200 C, 250 C, and 300 C at various nitgen pressures. ... Above 200 Cconductivity becomes almost independent of N contentits dependence on temperature declines.

28 Sep 2012: The channellength is between 7 and 10µm, while the gate width is LG =200 or300 nm, depending on the device. ... Figure 4a,bplots our measured NEPs as functions of VG. The minimumRT NEP is 200 nW Hz1/2 for SLG and almost one order ofmagnitude lower (30

20 Oct 2009: CONCLUSION. We deposited PLD ta-C films 100-200 inn thick on Si both with and without a SiC interlayer,working in a vacuum of 10-2 Pa.

1 Feb 2017: 3 –2 –1 0 1 2 3 0 200 400 600 800 1,000. ... The D peak region at B1,350 cm1 isconvoluted with a band at 1,200–1,450 cm1 arising from optical phonons inLN51.

8 Jul 2016: Openings of 50 to 200 nm diameter are etched into the SiO2, and either ta-C or a-COx is deposited into them to form individual memory cells of various sizes. ... Phys. 9, 200 (2013). [3] http://www.itrs2.net/itrs-reports.html [4] F. Kreupl et al., IEEE

17 Jun 2015: Role of Cooperative Interactions in the Intercalation of Heteroatomsbetween Graphene and a Metal SubstrateGeng Li,†,# Haitao Zhou,†,# Lida Pan,†,# Yi Zhang,† Li Huang,† Wenyan Xu,† Shixuan Du,† Min Ouyang,‡. Andrea C. Ferrari,, and

27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive

20 Feb 2006: 40. 200. Data source: Open University (1995) “S268: Physical Resources and Environment” Block 3, pp6.

3 Jul 2015: The sheet thickness was varied between 0.5 and 3.0 nm. Underneath this sheet,a 200 nm thick gold layer was placed in order to replicate the experimental NP onmirror