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www-g.eng.cam.ac.uk/reactingflows/index.xml
www-g.eng.cam.ac.uk/reactingflows/index.xml2 Nov 2023: This configuration makes the beam convergent inside the cavity, allowing a spatial resolution within 200 μm, whilst increasing the absorption by an order of magnitude. -
Short pulse generation from a graphene-coupled passively mode-locked…
www-g.eng.cam.ac.uk/nms/publications/pdf/447_Riccardi2023.pdf16 May 2023: alizedE-field. intensity. 30–10 0 10 20–200. 10. 20. y (µ. m). ... Current (mA)200 400300. Current density (A cm–2). 200 400 500. Volta. -
arX iv:2 305. 0179 1v1 [co nd-m at.m trl- ...
www-g.eng.cam.ac.uk/nms/publications/pdf/448_Cadore2023.pdf16 May 2023: 200 250 300 350 400 450 1400 1600 2600 2800. 8. ... Zheng, F.Hatami, X. Xu, A. Majmdar, Nano. Lett. 17, 200-205(2017). [26] R.J.P. -
nature nanotechnology…
www-g.eng.cam.ac.uk/nms/publications/pdf/Montblanch_2023SI.pdf25 Jul 2023: WSeS(Janus). 1.77 to 1.82[200] - - - - - - -. GaSe1.7-2 (from 10 K to 300K)[201, 202]. - - 7 ns as extracted from g2[202] Down to 0.13[201] -Hints ... 12, 6753 (2021). 20. 200. Feuer, M. S. G. et al. -
Resistive Switching Crossbar Arrays Based on Layered Materials
www-g.eng.cam.ac.uk/nms/publications/pdf/501_Lanza2022_2.pdf30 Mar 2023: 68,131] outstanding compared to RS based on SiOx[61] and metal oxides.[199,200] Previous experiments demon-strated that metal oxides, such as HfO2 and CuO, do not offer the ... c) I–V curves applying pulsed voltage stresses to an -
Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron…
www-g.eng.cam.ac.uk/nms/publications/pdf/Ramsden_2023.pdf20 Jul 2023: Monolayer (1L) transition metal dichalcogenides(TMDs) are interesting for optoelectronic1 andelectronic2 applicationsdueto theirdirectbandgap,3high room temperature mobility4 (200 cm2 V1 s1), strongexcitonic binding energy5 (>200 meV), and valley -
2D Materials ACCEPTED MANUSCRIPT • OPEN ACCESS Graphene-Black…
www-g.eng.cam.ac.uk/nms/publications/pdf/509_Akhavan2023.pdf27 Mar 2023: b). 200 250. B3g. B1g. LPE BP. Ground BP. Bulk BP. ... a). -40 -20 0 20 40. 100. 200. 300. 400. Vds = 0.5 V. -
Layered materials as a platform for quantum technologies
www-g.eng.cam.ac.uk/nms/publications/pdf/Montblanch_2023.pdf16 Jun 2023: ZPL. PSB. 1.20.80.4. 0. g2(τ. ). Delay time (ns)–40 40–20 200. ... 3.6. 3.4. 3.2. 3.0. 100 200 300Temperature (K). 0 5 10 15 20 25Magnetic field (mT). -
Electrically Tunable Nonlinearity at 3.2 Terahertz in Single-Layer…
www-g.eng.cam.ac.uk/nms/publications/pdf/DiGaspare2_2023.pdf17 Aug 2023: The 10 μmthick GaAa/AlGaAs active region comprises 120 repetitions.This is embedded between two heavily Si-doped GaAs layersdefining the bottom (500 nm thick, n = 3 1018 cm3) andtop (200 -
Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is…
www-g.eng.cam.ac.uk/nms/publications/pdf/Xu_2023.pdf16 Aug 2023: Figure 4b is a series of TR-PEEM imagesacquired at pumpprobe time delays of 0, 40, 80, 120, 200,.
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