Search

18 Jun 2021: 1. Supplementary Figures. 0 4 8 12 16 200. 5000. 10000.

23 Mar 2021: has EF 200 meV, as extracted from Raman experiments. Figure S3: ( ) in units of universal conductance G0 = e2/4h = 6.0810. ... 5 S, for EF=50 meV (red), 200 meV (black) and. 300 meV (blue).

9 Jun 2021: 6, whichplots both values as a function of VGS for VDS = 200 mV. ... Red curve: cut of Fig. 5c forVDS = 200 mV. Blue curve: cut of Fig.

12 Apr 2021: Bulk PTMCcrystals are mechanically exfoliated onto a 200 nm layer of poly-(propylenecarbonate) (PPC), spin coated onto a Si wafer and identied using opticalmicroscopy.20 Selected PTMC akes are then picked ... 002ð1Þ at 200 cm1 and A. 01ð2Þ at

1 Jul 2021: Ergoktas and colleagues tested the endurance in THz, infrared and visible ranges, showing that the devices can operate for over 11,000, 2,200 and 580 on/off cycles in these

18 Jun 2021: Coupling to the resonator occurs through a 200 nmgap via a single bus WG, Fig. ... In both systems thesame amplifier is employed to obtain a >200 mV output voltageswing (VOUT), as required for driving the subsequent clock anddata recovery CMOS circuit.

9 Jun 2021: Ag/Zr0.5Hf0.5O2:GOQDs/Ag 10000 0.8 200 µA / 160 µW 3000 µA / 2.4 mW 30 S33.

26 Apr 2021: ExperimentalFittingS2p3/2S2p1/2Defects component. 200 µm. Fig. 2 | Characterization of MS2 films and networks. ... 0 200 400 600 800 1,000 1,200 1,400 1,600–45. –42. –39.

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

15 Feb 2021: We investigate mechanically exfoliated 1L-MoSe2 on a 200-μmfused silica substrate (see Methods for details). ... This is performed with polydimethylsiloxane(PDMS) and, after inspection under an optical microscope, 1L-MoSe2 is drytransferred in ambient

25 Jan 2021: b–d 532 nm Hot PL spectra of 1L-WSe2 at b 78 K, c 200 K, d 250 K. ... respectively. Thehot PL peaks are seen at 200 K, Fig. 2c, and a further increase inintensity is observed at 250 K, Fig.

23 Mar 2021: is 1.3 dB, in agreement with the expected THz optical losses of SLG for EF  200 meV (see Supporting Information). ... The RF spectrum analyzer settings are: RWB: 10 kHz, VBW: 100 kHz, SWT: 200 ms, RMS acquisition mode.

7 Jan 2021: Figure 4A and B shows the time traces of samples Aand B, recorded at zero gate bias with an oscilloscopehaving a temporal resolution 200 ps. ... The latter signal is then pre-amplified witha voltage pre-amplifier (FEMTO, input impedance 1 MΩ, gain 40

7 Jan 2021: d 200 μm, unlike what experimentally observed in the caseof a dispersion compensated GTI THz QCL comb,23 achievedby coupling a metal mirror.In the latter case, a narrow (3 kHz)

16 Dec 2021: b) jEi population plotted in orange circles as a function of ωR for Δ 0 and 200 mT magnetic field strengthapplied at 54.7 relative to the SnV symmetry axis. ... The solid curve is a two-Lorentzian fit resulting in an average linewidth of900(200) kHz

4 Aug 2021: This is seen in Figure  4a, which shows the variability of the currents registered in each conductance state (each box includes 200 data points).

16 Jun 2021: 3. 100 200 300 400 500Raman shift (cm-1). Ram. an in. ... 10. nanopillar site before and after it is addressed with a maximum excitation power of 200 µW,.

7 Jan 2021: HBN-Encapsulated, Graphene-based, Room-temperature TerahertzReceivers, with High Speed and Low NoiseLeonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, and Miriam S. Vitiello. Cite This: Nano Lett. 2020, 20, 31693177 Read Online.

26 Jan 2021: This, in principle, could impact thecurrent. However, the graphene surface in contact with theelectrolyte is very small, with a ratio between the twosurfaces1/200.

16 Dec 2021: False color SEM images show two GPDs. (c,d) Antenna simulations showing the field enhancementwith respect to the antenna dimensions, for w = 200 nm. ... https://doi.org/10.1021/acsnano.1c06432ACS Nano 2021, 15, 1796617976. 17973. smaller than the GFET

1 Mar 2021: greater control of strain and doping, than that currently. achievable87,88 when performing growth and transfer on full150 or 200 mm wafers.

27 Apr 2021: Before 1L-MoTe2 transfer, the meanloaded resonance line width is κ/2π 200 MHz.

27 Jan 2021: conduction band in the probe window, consistentwith previously observed sub-200 fs hot-electron transfer fromAu nanoantennae to 1L-MoS2.

21 Sep 2021: mm2199 40 (B2mb) mm2 m / mm2 / m or mm2 / 200 40 (C2cm) mm2 1 / 2 or m / / Equivalent Hall numbers: 198 (Bbm2) 197, 201 (Cc2m) 200, 202 (Am2a) 199203 41 (Aba2)