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17 Oct 2008: a). (c). (b). (d). TE0. TE1. 50 100 150 200 250. ... 440. 450. 460. 470. 480. 490. 500. 50 100 150 200 250.

11 Apr 2008: The central tube is one micrometer long and acts as a rail forthe second, smaller, 200-nanometre nanotube.

17 Oct 2008: The Concept. 0 5 10 15 200. 10. 20. 30. 40.

17 Jul 2008: Figure 4 shows the PL of the nanostructures for excita-tion at 200 nm. ... PL of each sample in the region 200–900 nm is displayed inFigure 4.

2 Oct 2008: 200 300 400 500 600 700 800 900Temperature (K). 100. 200. ... m-1. ). 0 50 100 150 200 250 300 350T (K).

8 Dec 2008: 1,000 1,200. Wavelength (nm). Er3+ iongain bandwidth. 1,400 1,600 1,800 2,000. ... et al. Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker.

21 May 2008: h) SEM micrograph of a monolithic Sijunction with overlapping NW masks (gray ) SiO2; blue ) Si).Scale bar is 200 nm. ... The current flowing throughthe NW is about 2 orders of magnitude lower than thatflowing through the 200 times wider channel of the

20 Aug 2008: 214.199 214.200 214.201 214.202. -120. -100. -80. -60. -40. -20. Inte. ... 0 200 400 600 800 1000-80. -60. -40. -20. 0. (b).

27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device

30 Nov 2008: 7065, pp. 197-200, 2005. 3. S. V. Morozov, K. S. Novoselov, M.

27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive

5 Nov 2008: range (1550 nm), as discussed below. Moreover, it has a lowglass-transition temperature (Tg 85 8C), decomposes in airjust above 200 8C,[20,21] and absorbs large amounts of moisturedue to ... which they generated 200 fs pulses at 1560 nm, amongst

27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm).

5 Sep 2008: Concentration (µg ml–1). 1,000 1,200 1,400. γ = E sur – TSsursolsol. ... Distance (Å–1). Inte. nsity. (a.u. )In. tens. ity (a. u.). 200.

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

20 Feb 2008: Our final val-ues, corresponding to B, 450 GPa, are Ebulk. 5 750– 790 GPa, Gbulk5 300– 395 GPa, Esurf5 200– 300GPa, andGsurf5 70– 150 GPa.

2 Jul 2008: 250 300 350 400 450100. 150. 200. 250. E [GPa]. ν = 0.

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

4 Nov 2008: water, and 7 dry at 200 Cand store in a nitrogen dry-box. ... 10 100Vgate (V). 200.000.040.080.12. Cond.(e2 /h). semiconducting. 0.2. 0.3. 0.4. -10 100Vgate (V).

26 Jun 2008: 1(b)] are grown using a dc PECVDsystem from a gas mixture of C2H2 (50 sccm) and NH3(200 sccm) at 0.7 mbar pressure.