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1 Jun 2009: The gap between cathode and anode is 200 m,and the sample area is 0.6 cm2. ... Scale bar: 200 nm. b Representativetransfer curve for the NW device in a.

13 Oct 2009: BS62. 62-3. :200. 5. Monolithic Annealed (AN) 8mm 10mm 8mm 10mm 8mm 6mm. ... BS62. 62-3. :200. 5. Monolithic Annealed (AN) 12mm 12mm 10mm 12mm 12mm 8mm.

9 Mar 2009: 0.5 1 1.5 2 2.5 3 3.50. 100. 200. 300. 400. ... 100. 150. 200. 250. 300. 350. number of sides n. are.

27 Oct 2009: The suspensions are then ultrasonically treated ina 200 W, 20 kHz sonicator bath (Nanoruptor, Diagenode) for2 h. ... OF. CA. MB. RID. GE. on. Oct. ober. 27,. 200. 9 | h.

2 Nov 2009: 11] A. G. Rozhin et al., "Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker." Appl.

7 Jul 2009: 100. 150. 200. 250. t/c. Vel. ocity. (m. /s). Span = 60m, 80m, 100m. ... 0 0.2 0.4 0.6 0.8 10. 100. 200. 300. 400. 500.

29 Aug 2009: 0. 20. 40. 60. 80. 100. 0 100 200 300 400 500 600.

1 Oct 2009: and a modulation depth 16.9% (in absorption) at a highpulse fluence 200 μJ/cm2. ... Five milliliter solution is thenmixed with 2 ml of a PVA aqueous solution (200 g/l).

8 Dec 2009: after O2 etching revealing a GNR (scale bar: 200 nm). ... Scale bars: 200 nm. wide, 400 nm long GNR after consecutive etching steps of10 s (etch1), 15 s (etch2), and 15 s (etch3).

15 Oct 2009: extensive quantum MD simulations. From five. trajectories, each consisting of 200 consecu-. ... of climate models (16–18), both of which. predict that any warming at the surface wouldRemote Sensing Systems, 438 First Street, Suite 200,Santa Rosa, CA

15 Oct 2009: This was achieved using an ATI Unicam UV2-200 UV-VIS spectrometer over the 185 to 910 nm wavelength range. ... Similar spec-tra were found for films deposited at ion energies of between 150 and 200 eV.

28 Jul 2009: ON. SOR. TIA. UK. on. July. 28,. 200. 9Pu. blis. hed. ... on. July. 28,. 200. 9Pu. blis. hed. on J. une. 10, 2.

20 Oct 2009: Despite the homogeneous schematisation of a probable densitygradient, the values Eit = 750-790 GPa, Gint = 300-395 GPa, Ext = 200-300 GPa, and Gext = 70-150 GPa could be determined. ... Ta-C:H Ta-C ta-csurf WWW-ta-C Diamond. E (GPa) 3004_9 757.547.5

24 Mar 2009: cooled down to 400 C while NH3 is still flowing, and then exposed to a 50:200 SCCM C2H2 : NH3 gas mixture 0.7 mbar for 40 min. ... the 200–300 nm Ni clusters are polycrystalline. The complexshape can result in more nucleation sites for nanofibergrowth.

15 Oct 2009: 260 0. 9 C. 0 200 400 600 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 i8Incidenlt Pump Powr (m" Frequengy (GHz

20 Oct 2009: CONCLUSION. We deposited PLD ta-C films 100-200 inn thick on Si both with and without a SiC interlayer,working in a vacuum of 10-2 Pa.

20 Oct 2009: An a-C:H layerwas deposited with a PECVD system, at 200 W and 100mTorr pressure.

15 Oct 2009: c). (a) (b). 8.5. 8.0. 7.5. 7.0100. 200. 200. 300300. 400. ... surface (red atoms), obtained by using a 200 atom supercell of ta-C of bulk.

20 Oct 2009: 200 phonons creates a q=O selection rule. For200 microcrystalline systems with grain size L,.

24 Apr 2009: e-mails: mfuhrer@umd.edu;adam1@umd.edu. 1. Novoselov, K. S. et al. Nature 438, 197–200 (2005).2.

15 Oct 2009: 90, No. 10, 15 November 2001 Chhowalla et al. ratio of 75:200 sccm at2 600 V and 700 C. ... 1. Standard growth conditionsbias voltage5 2 600V, C2H2 :NH35 75:200, time515 min!

2 Feb 2009: Thin films ( 200 nm) show de-fined surface Brillouin peaks, whereas thicker films showa broadening and a disappearance of these peaks, togetherwith the appearance of a strong central peak.

26 Jun 2009: After synthesis, SiNWs are mechanically transferred21,33. onto a 200 nm thick SiO2 layer thermally grown on top of aheavily doped Si wafer, used as bottom gate.

30 Oct 2009: layer of PMMA and a layer of SU8 (200 nm) photoresist of similarYoung’s modulus with thickness t 2.9 mm and widthb 12.0 mm.

1 Jun 2009: solid graphite film, with thickness chosen to have the. same density per unit cross section, that is, 200 nm. ... Sub-200-fs Pulsed Erbium-DopedFiber Laser Using a Carbon Nanotube-PolyvinylalcoholMode Locker. Appl. Phys.

8 Apr 2009: and high carrier mobilities(between 3000 and 200 000 cm2/Vs)5-10 make it a potentialmaterial for nanoelectronics,11-14 especially for high fre-quency applications.

1 Jun 2009: 150. 160. 170. 180. 190. 200. 210. 220. 230. 240250. 260 270 280290.

23 Feb 2009: Exp Astron (2009) 23:809–847DOI 10.1007/s10686-008-9115-8. O R I G I N A L A R T I C L E. Triple F—a comet nucleus sample return mission. Michael Küppers H. U. Keller E. Kührt M. F. A’Hearn K. Altwegg R. Bertrand H. Busemann M. T. Capria L.

20 Oct 2009: is the kink in the electrondispersion, about 200 meV below EF, seen by angle-resolvedphotoemission spectroscopy ARPES.63,80 This is attributedto a correction to the electron energy due to

20 Oct 2009: These include surfactants,[62,106,195,196,241]. water-soluble polymers,[106,195,199,200,241,242] DNA,[63,64,243,244]. polypeptides,[231–233] and cellulose derivatives.[201,234,245]. ... 5.1.2. Polymers. The authors of Ref. [200] first reported the use

15 Oct 2009: For a density;3 g/cm3 D c is ;200–250 nm. If thesurface layer is thicker thanD c , we would directly see, inthe specular scan, the critical angle corresponding to