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20 Apr 2007: on. Apr. il 20. , 200. 7 w. ww. sci. ence. ... Konovalov et al. report the discovery ofthin layers of oxygen-rich waters, extendingas much as 200 km into the Black Sea,which inject massive amounts of O2 intothe oxic and suboxic

30 Mar 2007: Calleja 200. Electronic properties of InAs/GaAs nanowire superlattices. Y.M. Niquet 204. ... Calleja, E. 200. Canc-ado, L.G. 88. Cantoro, M. 1. Carbone, L.

26 Feb 2007: This means that from one or two milligrammes of carbon nanotubes we could make 200-300 mode-lockers,' said Ferrari.

2 Mar 2007: Acc. Chem. Res. 35, 193–200 (2002).7. Alfe, D., Gillan, M. J. & ... Nature 438,. 197–200 (2005).16. Zhang, Y., Tan, Y. W., Stormer, H.

20 Apr 2007: A community web site from Institute of Physics PublishingSign in Forgotten your password? Sign up. ho me ne ws fe a tu res op in io n na n o & s oc ie ty jou rn al h ig h lig hts. dire c tory link s ev e nts yo u r ne w s job s co n tac t u s ad v

18 Dec 2007: Non-destructive Characterisation of Carbon Films. Andrea C. Ferrari. Abstract The availability of reliable characterisation tools for carbon films down to a few atomic layers’ thickness is one of the most decisive factors for technology

18 Dec 2007: Experimental Methods. In situ TEM growth was carried out in a modified TecnaiF20, equipped with a differential pumping scheme (ETEM),operated at 200 kV.18 The microscope permits pressures of upto ... flow, in a LPCVD system at 200 mbar, bridging

27 Mar 2007: Five milliliter solution is thenmixed with 2 ml of a PVA aqueous solution (200 g/l). ... 200 250 300 1400 1600. after laser before laser. Inte. nsity.

16 Apr 2007: Tecnai F20,200 kV), and Raman spectroscopy (Renishaw 1000 Ramanspectrometer, 514, 633, and 785 nm excitation). ... The0.18 nm lattice spacing observed in Figure 3a can be assignedto (200) lattice planes in metallic Ni.

28 Nov 2007: scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (TEM). Three-terminals FETs are fabricated by dispersing SiNWs on a 200 nm thick SiO2 layer thermally grown.

10 Apr 2007: S. et al. Nature 438, 197–200 (2005).3. Zhang, Y., Tan, Y.-W., Stormer, H.

27 Mar 2007: For example, Erlandsson et al. [24,25] reportedsignificant restructuring of 0.5 nm thick Pd films (meltingand Huetting temperatures of 1554 and 275 1C, respec-tively) at 200 1C when subject

27 Mar 2007: NW are typically 50 nm in diameter [8]). The NRDdiameter (100–200 nm) is also much larger than the sizeof the original CdSe colloids (5 nm).

28 Aug 2007: Sonication is carried out in a 200 W, 20 kHz sonication bathBioruptor; Diagenode for 1 h, before intense ultracentrifu-gation for 30 min at 30 000 rpm Beckman, Optima MAX-E. ... Medium integration and a delay of 200 ms areused to ensure that no transient

10 Dec 2007: Thus, the static and the dynamic models predict. 4. 0 100 200 300 400 500 600 700 800.

27 Dec 2007: The vertical scale is. magnified 200 times compared with the horizontal scale. ... 280 30 38.5 40.0 39.6. 200 30 38.5 40.7 40.5. 120 32 38.7 42.7 43.0.

8 Jan 2007: density limit was approximately 40 Gbits/in2. This was increased to. 200 Gbits/in2 by reducing the bit-aspect ratio to four and by using. ... of 200-500 W to deposit the films87. This allows a high deposition rate.

18 Dec 2007: Three-terminal FETs arefabricated by dispersing SiNWs on a 200-nm-thick SiO2layer thermally grown on a degenerate p-doped Si wafer,used as backgate. ... Here, the total pressure isconstant at 200 mTorr. At this pressure pure thermal growthis ineffective,

12 Dec 2007: 0.05. 0.05. z (mm). -200 200 σx (N/mm2). (a). -0.05. 0.05. ... 200 200. z (mm). σy (N/mm2). (b). Fig. 16. Predicted stress distribution in test case 3, after forming.

22 Jun 2007: 8. (a). G peak position as a function of electron concentration at 200 K. ... phononenergy. (b) FWHM(G) at 200 K as a function of electron concentration.

27 Dec 2007: 200 30 38.5 40.5. 120 32 38.7 43.0. 90 33 39.2 45.7.