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Wafer-Scale Integration of Graphene-Based Photonic Devices
www-g.eng.cam.ac.uk/nms/publications/pdf/412_ACSnano.pdf1 Mar 2021: greater control of strain and doping, than that currently. achievable87,88 when performing growth and transfer on full150 or 200 mm wafers. -
Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021NanoLett.pdf27 Apr 2021: Before 1L-MoTe2 transfer, the meanloaded resonance line width is κ/2π 200 MHz. -
Weak Distance Dependence of Hot-Electron-Transfer Rates at the…
www-g.eng.cam.ac.uk/nms/publications/pdf/412_pub.pdf27 Jan 2021: conduction band in the probe window, consistentwith previously observed sub-200 fs hot-electron transfer fromAu nanoantennae to 1L-MoS2. -
Shear and Breathing Modes of Layered Materials
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Pizzi.pdf21 Sep 2021: mm2199 40 (B2mb) mm2 m / mm2 / m or mm2 / 200 40 (C2cm) mm2 1 / 2 or m / / Equivalent Hall numbers: 198 (Bbm2) 197, 201 (Cc2m) 200, 202 (Am2a) 199203 41 (Aba2)
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