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3 Feb 2014: 5. 6. 7. θ [rad]. m/D. κ T0. φ = 43o, t = 0.2 mmL = 200 mmL = 300 mmL = 400 mmL = 500 mm. ... Gentilini C. et al./ Physics Engineering 01 (2009) 000–000. 200 250 300 350 400 450 500.

7 Apr 2020: in $. US. mill. ions. 0. 200. 400. 600. 800. 1,000. ... 1,200. 1,400. 1,600. 1,800. 2,000. Rev. enue. in $. US. mill.

6 Nov 2013: Avatar — I have over 200 acres of. Leucaena/bermuda grass planted at over.

3 Jul 2015: 200) 51.98 8 6 2. 300 10.5 Ni (111) 44.66 34 6 2. ... 6 3. (200) 43.2 —. 700 32.3 NiO (111) 37.4 25 6 2.

13 Nov 2006: Scale bars: (a) 200 nm,(b) 1 μm. show that in most cases just a few nanofibres grow from eachdot. ... spectralregion, and scanning the samples with steps of 200 and 400 nm,respectively.

1 Aug 2016: 70 fs). The faster dynamicsτ1 is 200 fs while the slower one τ2 is about 5 ps. ... We find that the character-istic time scales of the intervalley scattering processes are respectively τ1 200 fs and τ2 5 ps.

8 Jun 2018: Ag (140 nm) Al (60 nm). Pyrex support (525 m). Al2O3 (200 nm). ... Al2O3 (200 nm)SOI Si device (20 m). Ag (140 nm) Al (60 nm).

18 Oct 2016: 490, pp. 192-200, 2012.

2 Mar 2007: Acc. Chem. Res. 35, 193–200 (2002).7. Alfe, D., Gillan, M. J. & ... Nature 438,. 197–200 (2005).16. Zhang, Y., Tan, Y. W., Stormer, H.

12 Apr 2021: Bulk PTMCcrystals are mechanically exfoliated onto a 200 nm layer of poly-(propylenecarbonate) (PPC), spin coated onto a Si wafer and identied using opticalmicroscopy.20 Selected PTMC akes are then picked ... 002ð1Þ at 200 cm1 and A. 01ð2Þ at

9 Jun 2021: 6, whichplots both values as a function of VGS for VDS = 200 mV. ... Red curve: cut of Fig. 5c forVDS = 200 mV. Blue curve: cut of Fig.

7 Apr 2020: tiona. llyre. sona. ntC. AR. S. 4000300. 200. 100. 0. 10–2 10–1 100. ... x (mm). # co. unts. # co. unts. 200. 200. 600.

6 Dec 2006: 5 ] to films deposited. by cathodic arc systems. Doping in ta-C can only bedecreases from 300 cm1 to 200 cm1 for temperaturesbetween room temperature and 200C.

1 Jun 2009: The gap between cathode and anode is 200 m,and the sample area is 0.6 cm2. ... Scale bar: 200 nm. b Representativetransfer curve for the NW device in a.

24 Sep 2013: Torrisi,T. Hasan, F. Wang, A. C. Ferrari, “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.

24 Sep 2013: XYCIRC10 /XYCMAT10 /XYCMBT10 /XYDASH10 /XYEUAT10 /XYEUBT10 /ZapfChancery-MediumItalic /ZapfDingbats /ZapfHumanist601BT-Bold /ZapfHumanist601BT-BoldItalic /ZapfHumanist601BT-Demi /ZapfHumanist601BT-DemiItalic /ZapfHumanist601BT-Italic ... Quality 10 >>

15 Feb 2011: The repetition rate ispump-dependent up to 200 mW Fig. 4b, a typical sig-nature of Q-switching.1 The output spectrum is tunable from1522 to 1555 nm. ... 80 100 120 140 160 180 200. 1.21.82.43.03.6. 80 100 120 140 160 180 200.

2 Oct 2008: 200 300 400 500 600 700 800 900Temperature (K). 100. 200. ... m-1. ). 0 50 100 150 200 250 300 350T (K).

23 Mar 2021: has EF 200 meV, as extracted from Raman experiments. Figure S3: ( ) in units of universal conductance G0 = e2/4h = 6.0810. ... 5 S, for EF=50 meV (red), 200 meV (black) and. 300 meV (blue).

26 May 2011: About 200 companies and start-ups are now involved in research around graphene.In 2010, it was the subject of about 3,000 research papers.

28 Aug 2013: CAMBRIDGE, England—A substance 200 times stronger than steel yet as thin as an.

13 Nov 2006: process gas at a flow rate of 100–200 sccm. A 2.45 GHz. ... microwave discharge is ignited for 1–3 s at a power of 200–.

27 Nov 2013: measured using an optical parametric oscillator (Coherent,. Chameleon) delivering 200 fs pulses at 80 MHz repetition. ... Downloaded to IP:. 129.169.173.200 On: Wed, 27 Nov 2013 16:21:32.

13 Nov 2006: 3(b). The AFM analysis shows a w of 40,200 and 100 nm for a respective original 0.3-, 1- and 5-nmFe thickness (Figs. ... Annealing in pure NH3 (200 sccm, 0.6 mbar pressure) at500 C results in a distinctively different topography for all Fethicknesses.

9 Oct 2012: APPLIED PHYSICS LETTERS 101, 153107 (2012). Downloaded 09 Oct 2012 to 129.169.173.200. ... Appl. Phys. Lett. 101, 153107 (2012). Downloaded 09 Oct 2012 to 129.169.173.200.

18 Dec 2007: Non-destructive Characterisation of Carbon Films. Andrea C. Ferrari. Abstract The availability of reliable characterisation tools for carbon films down to a few atomic layers’ thickness is one of the most decisive factors for technology

18 Dec 2007: Experimental Methods. In situ TEM growth was carried out in a modified TecnaiF20, equipped with a differential pumping scheme (ETEM),operated at 200 kV.18 The microscope permits pressures of upto ... flow, in a LPCVD system at 200 mbar, bridging

27 Oct 2009: The suspensions are then ultrasonically treated ina 200 W, 20 kHz sonicator bath (Nanoruptor, Diagenode) for2 h. ... OF. CA. MB. RID. GE. on. Oct. ober. 27,. 200. 9 | h.

20 Jul 2010: 2% -0.18 70 200 200 1 0.21 58 1.263 697 85.3. ... 5. Γ M K Γ0. 200. 400. 600. 800. 1000. 1200.

4 Dec 2017: Figure 2 shows asimulation of SLG absorption in the integrated FP cavity PD.For this we use the transfer matrix method48 and a cavity lengthL = 200 μm. ... described in Methods. The PDs are fabricated on a double-polished, low-doped (NA 1015cm3, p-type,

15 Aug 2022: 200. -100. 0. 100. 200. Cur. rent. (nA. ). c. 2.7 µm2.

2 Nov 2009: 11] A. G. Rozhin et al., "Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker." Appl.

9 Jun 2021: Ag/Zr0.5Hf0.5O2:GOQDs/Ag 10000 0.8 200 µA / 160 µW 3000 µA / 2.4 mW 30 S33.

7 Apr 2020: Inset: AFM scan of the Hall cross sample with numbered contacts(scale bar: 200 nm). ... and heated to 1065 C in a Arenvironment (200 sccm) at 100 C/min.

29 Jul 2010: a). 0 5 10 15 200.0. 0.2. 0.4. 0.6. 0.8. 1.0 τp=0.25 ps τp=0.5 ps τp=0.75 ps τp=1

21 May 2008: h) SEM micrograph of a monolithic Sijunction with overlapping NW masks (gray ) SiO2; blue ) Si).Scale bar is 200 nm. ... The current flowing throughthe NW is about 2 orders of magnitude lower than thatflowing through the 200 times wider channel of the

27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device

27 Mar 2007: Five milliliter solution is thenmixed with 2 ml of a PVA aqueous solution (200 g/l). ... 200 250 300 1400 1600. after laser before laser. Inte. nsity.

20 Jun 2017: ethanol-based (GEth) inks from the visible to near-infrared range. a. 200 nm 100 nm. ... smitt. ance. 100. 200. 300. –6,000 –3,000 0 3,000 6,000. Rad.

7 Apr 2017: II. MEMORY DEVICE AND CHARACTERISATION. The memory devices consist of Pt (W) bottom (top) elec-trodes and a SiO2 layer that has cylindrical openings of50 nm, 100 nm and 200 nm ... pulses. For noise reduction a 200 MHz software filter is applied tothe

20 Aug 2008: 214.199 214.200 214.201 214.202. -120. -100. -80. -60. -40. -20. Inte. ... 0 200 400 600 800 1000-80. -60. -40. -20. 0. (b).

8 Dec 2008: 1,000 1,200. Wavelength (nm). Er3+ iongain bandwidth. 1,400 1,600 1,800 2,000. ... et al. Sub-200-fs pulsed erbium-doped fiber laser using a carbon nanotube-polyvinylalcohol mode locker.

6 Aug 2015: Downloaded to IP:. 129.169.173.200 On: Thu, 04 Sep 2014 21:41:01. 24M. ... Downloaded to IP:. 129.169.173.200 On: Thu, 04 Sep 2014 21:41:01.

20 Jun 2017: The fine-structure splitting(200–730 meV) and the emission linewidths as narrow asB180 meV (B0.08 nm) are also consistent with previousreports11–15 (Supplementary Fig. ... 1d,. taken under 200 nW mm2, 532 nm laser excitation at 10 K.

1 Jul 2021: Ergoktas and colleagues tested the endurance in THz, infrared and visible ranges, showing that the devices can operate for over 11,000, 2,200 and 580 on/off cycles in these

22 Nov 2006: It reaches 200 eV at 1.39104mbar. The trend observed in Ar plasma is expected to be. ... Tencor Alpha-step 200 profilometer. A series of six. measurements along two perpendicular directions in the.

3 Jul 2015: oscillator (Coherent, Chameleon) delivering 200 fs pulseswith 4 MHz repetition rate at k01550 nm. ... Downloaded to IP:. 129.169.173.200 On: Mon, 29 Jun 2015 16:19:24.

18 Jun 2021: Coupling to the resonator occurs through a 200 nmgap via a single bus WG, Fig. ... In both systems thesame amplifier is employed to obtain a >200 mV output voltageswing (VOUT), as required for driving the subsequent clock anddata recovery CMOS circuit.

1 Oct 2009: and a modulation depth 16.9% (in absorption) at a highpulse fluence 200 μJ/cm2. ... Five milliliter solution is thenmixed with 2 ml of a PVA aqueous solution (200 g/l).

16 Apr 2007: Tecnai F20,200 kV), and Raman spectroscopy (Renishaw 1000 Ramanspectrometer, 514, 633, and 785 nm excitation). ... The0.18 nm lattice spacing observed in Figure 3a can be assignedto (200) lattice planes in metallic Ni.