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5 Oct 2011: SOI areas are removed (Figure 6h).21 The following conditionsare used: main rf power: 400 W; bias power: 50 W; gases cycled:SF6 (250 sccm)/C4F8 (200 sccm)/O2(100 sccm); ... Deposition conditions are asfollows: temperature: 200 C; deposition cycle: 250 ms

15 Feb 2021: We investigate mechanically exfoliated 1L-MoSe2 on a 200-μmfused silica substrate (see Methods for details). ... This is performed with polydimethylsiloxane(PDMS) and, after inspection under an optical microscope, 1L-MoSe2 is drytransferred in ambient

17 Mar 2022: Thus, for simplicity,we set τopt = 200 fs. The dielectric function of SLG is calculated as [110,111]:. ... EF 0,SLG = 0.15 eV, kF,SLG l 50, τe-e = 20 fs, τopt =200 fs, τinj = 30 ps.

6 Dec 2006: of effusion of hydrocarbon species than in ta-C:H (meth).sure of 104 mbar, flow rates of 2.5 and 5 sccm, andaverage ion energies of 130 and 200 eV

30 May 2012: 1(a). The GNR is 90-nm wide and 800-nmlong, and the inline QD is 200 nm in diameter D. ... c) (d). VBG. VPG(a) (b). FIG. 1. (Color online) (a) Atomic force micrograph of the GNR(W 90, L 800 nm) with an inline QD of diameter D 200

28 Feb 2006: Total freshwater (2.5%) = 35,029,000 km3. Available freshwater = 200,000 km3.

29 Aug 2009: 0. 20. 40. 60. 80. 100. 0 100 200 300 400 500 600.

20 Apr 2007: A community web site from Institute of Physics PublishingSign in Forgotten your password? Sign up. ho me ne ws fe a tu res op in io n na n o & s oc ie ty jou rn al h ig h lig hts. dire c tory link s ev e nts yo u r ne w s job s co n tac t u s ad v

7 Jan 2021: Figure 4A and B shows the time traces of samples Aand B, recorded at zero gate bias with an oscilloscopehaving a temporal resolution 200 ps. ... The latter signal is then pre-amplified witha voltage pre-amplifier (FEMTO, input impedance 1 MΩ, gain 40

7 Apr 2020: The photophysicalmechanism underlying this enhanced photocatalyticactivity is investigated by ultrafast TA spectroscopy with sub-200 fs time resolution and broad spectral coverage(430–1400 nm). ... We use flakes from Sigma-Aldrich with size 150 μmand

5 May 2005: WBS Task Level. 100 Concept Investigation. 200 Concept Approval D2. 300 Programme Definition. ... 1100 Procure Pre-prod material. 100 Concept Investigation. 200 Concept Approval. 1100 Procure Pre-prod material.

15 Oct 2009: extensive quantum MD simulations. From five. trajectories, each consisting of 200 consecu-. ... of climate models (16–18), both of which. predict that any warming at the surface wouldRemote Sensing Systems, 438 First Street, Suite 200,Santa Rosa, CA

20 Feb 2006: 337. 106. 924. Total freshwater withdrawal. 756. 1397. 1626. 200. 769.

17 Jun 2013: t (fs). t (fs. ). 1,050 nm1,350 nm1,500 nm. 0 200 400 600 800 1,000. ... Finally, the sample is cooled rapidly to room temperature undera hydrogen atmosphere at a pressure of 200 mTorr.

19 Jan 2017: ResultsPCCO characterization and Raman spectroscopy of SLG/PCCO. The PCCO (200-nm-thick) is grown by pulsed laserdeposition on (001) oriented SrTiO3 (STO) (see ‘Methods’) andhas a near-bulk superconducting transition ... The CVD-grown SLG is then

19 Feb 2016: corresponds to 200 kHz),17,18 often not desirable in appli-. cations such as nano-surgery19 or two-photon microscopy,20.

4 Aug 2021: This is seen in Figure  4a, which shows the variability of the currents registered in each conductance state (each box includes 200 data points).

30 Aug 2011: 150. 200. 250. 300. 350. 8. 8. 6 80 2 4 6 80. ... Nature 438, 197–200 (2005). 28. Zhang, Y. B., Tan, Y. W., Stormer, H.

6 Dec 2006: 11, 13 March 2000 Chhowalla et al. 6 5% for films deposited below room temperature up'200 C, above which there is a sharp transition from 8to ;0% s p3 bonding

20 Oct 2009: 200 phonons creates a q=O selection rule. For200 microcrystalline systems with grain size L,.

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

20 Feb 2008: Our final val-ues, corresponding to B, 450 GPa, are Ebulk. 5 750– 790 GPa, Gbulk5 300– 395 GPa, Esurf5 200– 300GPa, andGsurf5 70– 150 GPa.

2 Jul 2008: 250 300 350 400 450100. 150. 200. 250. E [GPa]. ν = 0.

5 Oct 2011: Rev. A 77,0238 (2008). 20 10 0 10 200. 0.25. 0.5.

27 Nov 2006: Filmthickness below 2 nm and roughness well below 1 nm are needed for storage density of 200 Gbityinch. ... with respect to S-bend FCVA filmsw43x. This is impor-tant since the process temperature for hard disk deposi-tion is ;200 8C.

10 Jan 2013: nanotube mode-locked 2 lm solid-state lasers (e.g., 200 fs(Refs. 8, 9, and 52)), but shorter than previous graphene.

11 Apr 2016: 1,100 1,500 2,400 2,800 3,200. 1st visible light illumination. 2nd. visible light illumination. ... 5e).In reality, the flakes (with average lateral sizes of 200 nm) formaggregates possessing a poor degree of order.

21 Nov 2018: The buildup of the occupation of the lower CB statewithin the same valley is delayed, but still displays a short timeconstant 200 fs at 77 K. ... These are exfoliatedwith Nitto Denko tape, then further exfoliated on apolydimethylsiloxane (PDMS) stamp for

6 Dec 2006: If sound is fasterprobably has a density gradient. The final values arein the film, the partial localisation is always near theEint=750–790 GPa, Gint=300–395 GPa, Eext=200–surface ... ta-C ta-Csurf WWW-ta-C Diamond. E (GPa) 30049 757.547.5

25 Mar 2013: Hasan, F. Wang, and A. C. Ferrari, “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl. ... The waveguide is inscribed by focusing the pulses, through a 0.4 NA lens, 200 µm below the substrate surface, by a master oscillator

7 Apr 2020: Hot Electrons Modulation of Third-Harmonic Generation inGrapheneGiancarlo Soavi,,†,‡ Gang Wang,† Habib Rostami, Andrea Tomadin, Osman Balci,† I. Paradisanos,†. Eva A. A. Pogna, Giulio Cerullo, Elefterios Lidorikis, Marco Polini, and Andrea

28 Aug 2007: Sonication is carried out in a 200 W, 20 kHz sonication bathBioruptor; Diagenode for 1 h, before intense ultracentrifu-gation for 30 min at 30 000 rpm Beckman, Optima MAX-E. ... Medium integration and a delay of 200 ms areused to ensure that no transient

14 Dec 2013: z (nm). DBR. -200 0 2000. 1. 2. 3. 4. abs=0.5. ... Ref. ract. ive. inde. x, |E. |2. z (nm). DBR. -200 0 2000.

6 Jan 2011: At alater time (Figure 4b, t 200 ns), a substantial numberof outer layer atoms have moved outside the CNT, cov-ering the head surface. ... METHODSETEM Measurements. We use a modified Tecnai F20 ETEM, oper-. ated at 200 kV, equipped with a differential

4 Nov 2008: water, and 7 dry at 200 Cand store in a nitrogen dry-box. ... 10 100Vgate (V). 200.000.040.080.12. Cond.(e2 /h). semiconducting. 0.2. 0.3. 0.4. -10 100Vgate (V).

28 Feb 2006: Total freshwater (2.5%) = 35,029,000 km3. Available freshwater = 200,000 km3. ... 1kg bricks 1-2. 1kg steel 5-200. 1kg aluminium 1500. 1kg fertiliser 600.

21 Dec 2015: The depolarizationdynamics, measured at 77 K, exhibits a peculiar biexponential decay, characterized by two distinct time scalesof 200 fs and 5 ps. ... The faster dynamics is τfast = 200 10 fs while theslower is τslow = 4.8 0.2 ps.

5 Sep 2018: Scale bar: 200 µm. 1801599 (3 of 8). www.advancedsciencenews.com. 2018 WILEY-VCH Verlag GmbH & Co.

20 Sep 2010: 320 fs pulse generation from an ultrafast laser inscribed waveguide lasermode-locked by a nanotube saturable absorber. S. J. Beecher,1,a R. R. Thomson,1 N. D. Psaila,1 Z. Sun,2 T. Hasan,2 A. G. Rozhin,2. A. C. Ferrari,2 and A. K. Kar11Department of

10 Dec 2007: Thus, the static and the dynamic models predict. 4. 0 100 200 300 400 500 600 700 800.

24 Apr 2009: e-mails: mfuhrer@umd.edu;adam1@umd.edu. 1. Novoselov, K. S. et al. Nature 438, 197–200 (2005).2.

3 Jul 2015: The sheet thickness was varied between 0.5 and 3.0 nm. Underneath this sheet,a 200 nm thick gold layer was placed in order to replicate the experimental NP onmirror

7 Apr 2020: These include high-speed (>200 GHz56) operation,57 broad-band (ultraviolet to far-infrared) absorption,5860 efficientoptical modulation (electro-optical index change Δneff >103),31 CMOS compatibility,41,61 and ... of the laser at 200 Hz.

15 Jun 2006: 200,000 tonnes of plastic rubbish is being sent 8,000 miles to China each year for recycling. ... MJ/kg] 14 80 84 200 23Energy/Volume. [MJ/litre] 8.2 3.2 5.4 9.0 2.4.

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

8 Dec 2009: after O2 etching revealing a GNR (scale bar: 200 nm). ... Scale bars: 200 nm. wide, 400 nm long GNR after consecutive etching steps of10 s (etch1), 15 s (etch2), and 15 s (etch3).

13 Nov 2006: We use polished, 0.01-0.02 cm boron-doped Si(100)wafers as substrates, covered with thermally grown SiO2(50-200 nm). ... The process temperature is indicatedfor each sample. Scale bars: 100 (b-d), 500 (e), and 200 nm (f).

26 Apr 2021: ExperimentalFittingS2p3/2S2p1/2Defects component. 200 µm. Fig. 2 | Characterization of MS2 films and networks. ... 0 200 400 600 800 1,000 1,200 1,400 1,600–45. –42. –39.

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

9 May 2012: c). (d). Fe (1 nm)(10 nm). Vertical CNT forest. SiOx (200 nm). ... 200. 0. 0 200 400 600 800. 0.02. 0.015. 0.01. 0.005.