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04ta2410
www-g.eng.cam.ac.uk/nms/publications/pdf/FerrariPTRS2004.pdf27 Nov 2006: Robertson. 0. 100. 200. 300. 400. GT1060 cm1. 633 nm. 514.5 nm. ... 0. 100. 200. 300. 80 100 120 140 160. 1.0. 1.5. -
In Situ Observation of Low‐Power Nano‐Synaptic Response in Graphene…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Huitemp.pdf4 Aug 2021: This is seen in Figure 4a, which shows the variability of the currents registered in each conductance state (each box includes 200 data points). -
nl9b02238 1..13
www-g.eng.cam.ac.uk/nms/publications/pdf/381.pdf7 Apr 2020: These include high-speed (>200 GHz56) operation,57 broad-band (ultraviolet to far-infrared) absorption,5860 efficientoptical modulation (electro-optical index change Δneff >103),31 CMOS compatibility,41,61 and ... of the laser at 200 Hz. -
Graphene modelocked VECSELs C.A. Zaugg1*, V.J. Wittwer2, Z. Sun2, ...
www-g.eng.cam.ac.uk/nms/publications/pdf/896607.pdf14 Mar 2014: organic vapor phase epitaxy (MOVPE, AIXTRON AIX 200/4) as described in [47]. ... The pump laser is coupled into a 200 µm fiber. Fig. -
nn6b05109 1..11
www-g.eng.cam.ac.uk/nms/publications/pdf/acsnano.6b05109.pdf18 Oct 2016: RESULTS. Figure 1a plots a schematic drawing of our PDs. We fabricated4 PD arrays with 10 devices each, with channel lengths of 100μm, 200 μm, 500 μm, and 1 mm. ... Scale bar is 200 μm. ACS Nano Article. DOI: 10.1021/acsnano.6b05109ACS Nano 2016, 10, -
PHYSICAL REVIEW E 94, 063002 (2016) Inverted cones and ...
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2016PREC.pdf6 Jan 2017: a). 0 200 4000. 0.02. 0.04. 0.06. d / t. F / E. ... t2. (b). 0 200 400 6000. 0.05. 0.1. d / t. -
1.1 Gigahertz Multi-Transistor Graphene Integrated Circuits
www-g.eng.cam.ac.uk/nms/publications/pdf/06724538.pdf4 Feb 2014: Bandgap engineering is usually attempted by patterning into graphene nanoribbons (GNRs) (24,11), but GNRs tend to have low mobilities (<200 cm2V1s1) (27) as a consequence of carrier scattering on disordered ... Although these inverters pave the way to -
an-2019-011268 1..10
www-g.eng.cam.ac.uk/nms/publications/pdf/388.pdf7 Apr 2020: Amicrographite with a particle size distributiond50 = 1723 μm(SGA 20 M 99.5; AMG graphite, Hauzenberg, Germany) was used toprepare TRGO with a particle size distribution between 5 and 200 μm. -
sample.tex
www-g.eng.cam.ac.uk/nms/publications/pdf/Pedersen_IEEEPhotonics2012.pdf20 Jun 2012: We considera pulse centred at 1060 nm with a time window of 200 ps divided into 212 points and a dopedfibre with length 0.9 m, dispersion β2 = 0.018. ... 0. 2. 4. 6. 8. 10. 12. 14. 0 100 200 300 400 500 600 700. -
doi:10.1016/j.diamond.2003.12.018
www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_DRM2004b.pdf27 Nov 2006: This is partic-ularly important for magnetic disk deposition since thefilms are usually grown at;200 8C, which can favourthe decoupling of the sp clustering from the sp content2 3. -
jp400599g 1..13
www-g.eng.cam.ac.uk/nms/publications/pdf/Bonaccorso_JPC2013.pdf28 Jun 2013: such as PEG-200 (viscosity, η, 60 mPas; density, ρ, 1.12 g/. ... Figure 7. AuNPs sorted in (a) water/PEG-200 and (b) water/glycerol gradients. -
5.3 n&v MH IF
www-g.eng.cam.ac.uk/nms/highlights-press/Fuhrer_Nature_2009.pdf24 Apr 2009: e-mails: mfuhrer@umd.edu;adam1@umd.edu. 1. Novoselov, K. S. et al. Nature 438, 197–200 (2005).2. -
doi:10.1016/j.diamond.2004.11.043
www-g.eng.cam.ac.uk/nms/publications/pdf/Piscanec_DRM2005.pdf22 Nov 2006: 200 300 400 500 600 700 800. 1450. 1500. 1550. 1600. -
Thermal and chemical vapor deposition of Si nanowires:Shape control,…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_JAP2007.pdf18 Dec 2007: Three-terminal FETs arefabricated by dispersing SiNWs on a 200-nm-thick SiO2layer thermally grown on a degenerate p-doped Si wafer,used as backgate. ... Here, the total pressure isconstant at 200 mTorr. At this pressure pure thermal growthis ineffective, -
doi:10.1016/j.ijsolstr.2004.02.037
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/galletly2004b.pdf27 Dec 2007: The vertical scale is. magnified 200 times compared with the horizontal scale. ... 280 30 38.5 40.0 39.6. 200 30 38.5 40.7 40.5. 120 32 38.7 42.7 43.0. -
doi:10.1016/j.physe.2007.10.044
www-g.eng.cam.ac.uk/nms/publications/pdf/Hsieh_PE2007.pdf27 May 2008: The voltage level we typically use is on theorder of 150–200 V, with pulse duration of 37 ms. -
OE_revised.dvi
www-g.eng.cam.ac.uk/nms/publications/pdf/oe-20-22-25077.pdf18 Oct 2012: Hasan, F. Wang, and A. C. Ferrari, “Sub 200 fs pulse generation from a graphenemode-locked fiber laser,” Appl. ... 10-3. 10-2. 10-1. 100. -20 -10 0 10 200.0. 0.2. 0.4. -
ISSN:1369 7021 © Elsevier Ltd 2007JAN-FEB 2007 | VOLUME ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_MT2007.pdf8 Jan 2007: density limit was approximately 40 Gbits/in2. This was increased to. 200 Gbits/in2 by reducing the bit-aspect ratio to four and by using. ... of 200-500 W to deposit the films87. This allows a high deposition rate. -
Spider silk reinforced by graphene or carbon nanotubes
www-g.eng.cam.ac.uk/nms/publications/pdf/Lepore.pdf22 Aug 2017: The dispersions are ultracentrifuged using a TH-641 swinging bucket rotor in a Sorvall WX-100 at 200 000 g for 2 h at 18 C to remove bundles and other ... This could be due to the shape of the flakes. The lateral characteristic dimen-sions of our flakes -
No Job Name
www-g.eng.cam.ac.uk/nms/publications/pdf/Arenal_NL2006.pdf13 Nov 2006: The synthesis of the SW-BNNT used in this study isdescribed elsewhere.4,5 The collected synthesis products arestudied by HRTEM, using Philips CM20 (200 kV) and JEOL4000FX (400 kV) -
arX iv:1 003. 4714 v1 [ cond -mat .oth ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Sun_Arxiv2010_graphene.pdf25 Mar 2010: 4: (Circles) Output pulse duration; (squares) time-bandwidth product. 0 200 400 600 8000.0. -
JOURNAL OF APPLIED PHYSICS VOLUME 90, NUMBER 10 15 ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Chhowalla_JAP2001.pdf15 Oct 2009: 90, No. 10, 15 November 2001 Chhowalla et al. ratio of 75:200 sccm at2 600 V and 700 C. ... 1. Standard growth conditionsbias voltage5 2 600V, C2H2 :NH35 75:200, time515 min! -
Domestic Energy Use
www-g.eng.cam.ac.uk/impee/topics/DomesticEnergy/files/Domestic%20Energy%20v2%20PDF.pdf7 Jun 2006: China 1 088 349 289 489 1 264 764 000 0.229India 480 418 200 781 1 000 161 000 0.201. -
Sub-100 fs two-color pump-probe spectroscopy of Single Wall Carbon ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Gambetta_OE2008.pdf15 Aug 2008: By using an acousto-optic-modulator (AOM) at frequencies higher than 200 kHz, even better SNR could be achieved, but at the price of a reduced temporal resolution, due to -
Supplementary information for Confinement of long-lived interlayer…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch_supp.pdf16 Jun 2021: 3. 100 200 300 400 500Raman shift (cm-1). Ram. an in. ... 10. nanopillar site before and after it is addressed with a maximum excitation power of 200 µW,. -
nl5004762 1..10
www-g.eng.cam.ac.uk/nms/publications/pdf/nl5004762.pdf1 Jun 2020: Photothermoelectric and Photoelectric Contributions to LightDetection in MetalGrapheneMetal PhotodetectorsT. J. Echtermeyer,† P. S. Nene,† M. Trushin,‡ R. V. Gorbachev, A. L. Eiden,† S. Milana,† Z. Sun,†. J. Schliemann, E. Lidorikis, K. -
doi:10.1016/S0040-6090(03)00304-3
www-g.eng.cam.ac.uk/nms/publications/pdf/Rodil_TSF2003b.pdf28 Nov 2006: Corning glass by transmission and reflection measure-ments using an ATI-Unicam UV2-200 spectrometer inthe range 300–1100 nm. -
Graphene: The quest for supercarbon : Nature News & Comment
www-g.eng.cam.ac.uk/nms/highlights-press/quest_for_supercarbon.pdf22 Nov 2013: hexagons 100 to 200 times faster than it can move through silicon7. -
HBN-Encapsulated, Graphene-based, Room-temperature Terahertz…
www-g.eng.cam.ac.uk/nms/publications/pdf/397.pdf7 Jan 2021: HBN-Encapsulated, Graphene-based, Room-temperature TerahertzReceivers, with High Speed and Low NoiseLeonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, and Miriam S. Vitiello. Cite This: Nano Lett. 2020, 20, 31693177 Read Online. -
Measurement of Filling-Factor-Dependent Magnetophonon Resonances in…
www-g.eng.cam.ac.uk/nms/publications/pdf/YKim_PRL2013.pdf30 May 2013: In strained graphene nanobub-bles, it was reported that Bstr can reach 200–400 T [29].In nominally unstrained SLG, the residual strain causedby nm-scale height variations and defects can -
PII: S0040-6090(02)00808-8
www-g.eng.cam.ac.uk/nms/publications/pdf/Beghi_TSF2003.pdf28 Nov 2006: Aboveapproximately 200 nm the surface peaks disappear(seeFig. 2). In the thickest films(above 1mm) only thecentral peak and, sometimes, strongly damped bulkacoustic phonons, with a typical wavelengthl ;200phnm, have been -
Nanoscale Cathodoluminescence and Conductive Mode Scanning Electron…
www-g.eng.cam.ac.uk/nms/publications/pdf/Ramsden_2023.pdf20 Jul 2023: Monolayer (1L) transition metal dichalcogenides(TMDs) are interesting for optoelectronic1 andelectronic2 applicationsdueto theirdirectbandgap,3high room temperature mobility4 (200 cm2 V1 s1), strongexcitonic binding energy5 (>200 meV), and valley -
INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY Nanotechnology 17…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_NT2006.pdf13 Nov 2006: Scale bars in the insets are (a) 200 nm;(b) 20 nm. -
Optical trapping and manipulation of nanostructures
www-g.eng.cam.ac.uk/nms/publications/pdf/nnano.2013.208.pdf7 Nov 2013: 3. 4. 5. Dis. tanc. e (μ. m). zx. 0 200 400Force (fN). ... a. Displacement (nm)0 200 400 600 800 1,000 1,200 1,400. Dis. -
nl5b05216 1..9
www-g.eng.cam.ac.uk/nms/publications/pdf/acs2Enanolettj.pdf27 May 2016: kE q V. h E kT. qE. qV. cos ( / ). exp exp. TFE 00 RB. 200. B. 0. R. (1). where A is the effective Richardson constant, k is theBoltzmann constant, T -
doi:10.1016/j.physe.2007.10.058
www-g.eng.cam.ac.uk/nms/publications/pdf/Tan_PE2007.pdf27 May 2008: 3(c) is found to be. ARTICLE IN PRESS. PL inte. nsity (. arb. units). 0. 50. 100. 150. 200. Wavelength (nm). 900 950 1000 1050 1100 1150 1200. -
nn0c00309 1..11
www-g.eng.cam.ac.uk/nms/publications/pdf/Trovatello2020.pdf20 Jul 2020: It is then placedon a 200 μm fused silica (FS) substrate using wet transfer.3537. ... For all pump excitations, thetemporal duration is <20 fs and the bandwidth range between100 and 200 meV. -
nn5b05647 1..9
www-g.eng.cam.ac.uk/nms/publications/pdf/acsnano.5b05647.pdf2 Feb 2016: The BM-GBS shows a sub-micrometric morphology, with the lateral dimensions of the flakes<200 nm (Figure 3b).Following the structural characterization, neuronal cultures. ... Ethyl acetatesolution of functionalized MWNTs (0.1 mg/mL) is sprayed on -
doi:
www-g.eng.cam.ac.uk/nms/publications/pdf/c4nr00256c.pdf5 Jun 2014: 7b. These aggregates having a height rangingfrom 60 to 200 nm and a width spanning from 0.6 to 2 mm, werefound to be randomly distributed within the polymer matrix.Their ... Experimental sectionMaterials. Poly(3-hexylthiophene) (P3HT) (Fig. 1b) -
Ion Beam Doping of Silicon NanowiresAlan Colli,*,† Andrea Fasoli,‡ ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_NL2008b.pdf20 Aug 2008: The resulting NWs have a relativelythick (5-10 nm) oxide shell surrounding a crystalline Si core10-20 nm in diameter.14 After synthesis, the SiNWs aremechanically transferred onto a 200 nm -
Terahertz photodetection in scalable single-layer-graphene and…
www-g.eng.cam.ac.uk/nms/publications/pdf/436_Asgari2022.pdf22 Jul 2022: The beam isfocused by two TPX lenses onto a 200 lm radius circular spot. -
PHYSICAL REVIEW B 87, 205435 (2013) Raman scattering efficiency ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Klar_PRB2013.pdf24 May 2013: II). We find that the Raman scat-tering efficiency of the G peak [dS/d(G)] is 200 105m1 Sr1 at 2.41 eV. ... Eq. (12) we get dS/d(G)SLG 200 105 m1Sr1 anddS/d(G)(2D)SLG 1580 105 m1Sr1. -
1077-260X (c) 2013 IEEE. Translations and content mining are ...
www-g.eng.cam.ac.uk/nms/publications/pdf/06880814.pdf22 Aug 2014: Hasan, F. Wang, and A. C. Ferrari, "Sub 200 fs pulse generation from a graphene mode-locked fiber. -
Nano Res (2010) 3: 404–411 404 Ultrafast Stretched-Pulse Fiber ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Sun_naonres_2010.pdf21 Jun 2010: AntiAliasColorImages false /CropColorImages true /ColorImageMinResolution 150 /ColorImageMinResolutionPolicy /Warning /DownsampleColorImages true /ColorImageDownsampleType /Average /ColorImageResolution 200 /ColorImageDepth -1 ... Quality 10 >> -
/home/journal/dvi/EPJD013-EPJD-final-print.dvi
www-g.eng.cam.ac.uk/nms/publications/pdf/Milani_1999_EurPJD.pdf2 Feb 2009: Thin films ( 200 nm) show de-fined surface Brillouin peaks, whereas thicker films showa broadening and a disappearance of these peaks, togetherwith the appearance of a strong central peak. -
2D Materials ACCEPTED MANUSCRIPT • OPEN ACCESS Graphene-Black…
www-g.eng.cam.ac.uk/nms/publications/pdf/509_Akhavan2023.pdf27 Mar 2023: b). 200 250. B3g. B1g. LPE BP. Ground BP. Bulk BP. ... a). -40 -20 0 20 40. 100. 200. 300. 400. Vds = 0.5 V. -
Resistive Switching Crossbar Arrays Based on Layered Materials
www-g.eng.cam.ac.uk/nms/publications/pdf/501_Lanza2022_2.pdf30 Mar 2023: 68,131] outstanding compared to RS based on SiOx[61] and metal oxides.[199,200] Previous experiments demon-strated that metal oxides, such as HfO2 and CuO, do not offer the ... c) I–V curves applying pulsed voltage stresses to an -
Layered materials as a platform for quantum technologies
www-g.eng.cam.ac.uk/nms/publications/pdf/Montblanch_2023.pdf16 Jun 2023: ZPL. PSB. 1.20.80.4. 0. g2(τ. ). Delay time (ns)–40 40–20 200. ... 3.6. 3.4. 3.2. 3.0. 100 200 300Temperature (K). 0 5 10 15 20 25Magnetic field (mT). -
Graphene and Related Materials for Resistive Random Access Memories
www-g.eng.cam.ac.uk/nms/publications/pdf/Hui.pdf20 Jun 2017: up to 200 C). v) As the switching takes place through nano-sale CFs,[35] the area of the cell is just limited by the area of the CF (typically tens ... reset). 80% No [192]. ITO/SLG/ZnO/ITO CVD. (Transfer)200 µm. in diameter. 20 – 104 >100 – – Yes -
Graphene-Based Interconnects for Stable Dye-Sensitized Solar Modules
www-g.eng.cam.ac.uk/nms/publications/pdf/414_ACS.pdf26 Jan 2021: This, in principle, could impact thecurrent. However, the graphene surface in contact with theelectrolyte is very small, with a ratio between the twosurfaces1/200.
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