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30 Aug 2011: 150. 200. 250. 300. 350. 8. 8. 6 80 2 4 6 80. ... Nature 438, 197–200 (2005). 28. Zhang, Y. B., Tan, Y. W., Stormer, H.

20 Feb 2008: Our final val-ues, corresponding to B, 450 GPa, are Ebulk. 5 750– 790 GPa, Gbulk5 300– 395 GPa, Esurf5 200– 300GPa, andGsurf5 70– 150 GPa.

5 Oct 2011: Rev. A 77,0238 (2008). 20 10 0 10 200. 0.25. 0.5.

28 Feb 2006: Total freshwater (2.5%) = 35,029,000 km3. Available freshwater = 200,000 km3. ... 1kg bricks 1-2. 1kg steel 5-200. 1kg aluminium 1500. 1kg fertiliser 600.

14 Dec 2013: z (nm). DBR. -200 0 2000. 1. 2. 3. 4. abs=0.5. ... Ref. ract. ive. inde. x, |E. |2. z (nm). DBR. -200 0 2000.

20 Sep 2010: 320 fs pulse generation from an ultrafast laser inscribed waveguide lasermode-locked by a nanotube saturable absorber. S. J. Beecher,1,a R. R. Thomson,1 N. D. Psaila,1 Z. Sun,2 T. Hasan,2 A. G. Rozhin,2. A. C. Ferrari,2 and A. K. Kar11Department of

28 Aug 2007: Sonication is carried out in a 200 W, 20 kHz sonication bathBioruptor; Diagenode for 1 h, before intense ultracentrifu-gation for 30 min at 30 000 rpm Beckman, Optima MAX-E. ... Medium integration and a delay of 200 ms areused to ensure that no transient

21 Dec 2015: The depolarizationdynamics, measured at 77 K, exhibits a peculiar biexponential decay, characterized by two distinct time scalesof 200 fs and 5 ps. ... The faster dynamics is τfast = 200 10 fs while theslower is τslow = 4.8 0.2 ps.

4 Nov 2008: water, and 7 dry at 200 Cand store in a nitrogen dry-box. ... 10 100Vgate (V). 200.000.040.080.12. Cond.(e2 /h). semiconducting. 0.2. 0.3. 0.4. -10 100Vgate (V).

10 Dec 2007: Thus, the static and the dynamic models predict. 4. 0 100 200 300 400 500 600 700 800.

7 Apr 2020: Hot Electrons Modulation of Third-Harmonic Generation inGrapheneGiancarlo Soavi,,†,‡ Gang Wang,† Habib Rostami, Andrea Tomadin, Osman Balci,† I. Paradisanos,†. Eva A. A. Pogna, Giulio Cerullo, Elefterios Lidorikis, Marco Polini, and Andrea

6 Jan 2011: At alater time (Figure 4b, t 200 ns), a substantial numberof outer layer atoms have moved outside the CNT, cov-ering the head surface. ... METHODSETEM Measurements. We use a modified Tecnai F20 ETEM, oper-. ated at 200 kV, equipped with a differential

24 Sep 2020: b) Dark-field microscopy image of a SLG crystal array with aperiodicity of 200 μm.

25 Jul 2023: WSeS(Janus). 1.77 to 1.82[200] - - - - - - -. GaSe1.7-2 (from 10 K to 300K)[201, 202]. - - 7 ns as extracted from g2[202] Down to 0.13[201] -Hints ... 12, 6753 (2021). 20. 200. Feuer, M. S. G. et al.

5 Sep 2018: Scale bar: 200 µm. 1801599 (3 of 8). www.advancedsciencenews.com. 2018 WILEY-VCH Verlag GmbH & Co.

11 May 2018: Finally, the microdisks are undercut with potassiumhydroxide to form an air-clad whispering gallery mode (WGM)resonator.38 The microdisks sit on 200 μm Si Mesa pillars toprevent the tapered fiber ... The microdisk has aradius of 19 μm and sits on a 200

3 Jul 2015: The sheet thickness was varied between 0.5 and 3.0 nm. Underneath this sheet,a 200 nm thick gold layer was placed in order to replicate the experimental NP onmirror

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

28 Nov 2006: 1b). This is relevant for the present study since themagnetron sputtered samples(sets 1, 2) were depositedat T;200 8C and with an N content of;6 at.% N,whilst the

26 Jun 2008: 1(b)] are grown using a dc PECVDsystem from a gas mixture of C2H2 (50 sccm) and NH3(200 sccm) at 0.7 mbar pressure.

13 Nov 2006: We use polished, 0.01-0.02 cm boron-doped Si(100)wafers as substrates, covered with thermally grown SiO2(50-200 nm). ... The process temperature is indicatedfor each sample. Scale bars: 100 (b-d), 500 (e), and 200 nm (f).

9 May 2012: c). (d). Fe (1 nm)(10 nm). Vertical CNT forest. SiOx (200 nm). ... 200. 0. 0 200 400 600 800. 0.02. 0.015. 0.01. 0.005.

1 Jul 2021: Ergoktas and colleagues tested the endurance in THz, infrared and visible ranges, showing that the devices can operate for over 11,000, 2,200 and 580 on/off cycles in these

4 Apr 2011: b) (d). 200 nm 70 nm. pre-modificationpost-modification. G(μS). Vbg (V) Vbg (V)20 40 60 80 20 40 60 80. ... 200. 40. 60. 80100. 10. 0. 20. 30. (a) (c). FIG.

27 Nov 2006: The optical properties were investigated by opti-cal absorption spectroscopy using an ATI UnicamUV2-200 UV–Vis spectrophotometer over the 200–1100 nm wavelength range. ... of curvature measured both before and after depositionusing a Tencor

7 Apr 2020: The photophysicalmechanism underlying this enhanced photocatalyticactivity is investigated by ultrafast TA spectroscopy with sub-200 fs time resolution and broad spectral coverage(430–1400 nm). ... We use flakes from Sigma-Aldrich with size 150 μmand

28 Nov 2006: 0. 200. 400. 600. 800. 1000. 480 490 500 510 520 530 540. ... 0. 200. 400. 600. 800. A. Inte. nsity (. co. un.

8 Feb 2021: 9. ω0 dependence of Te in photoexcited SLG.Te as a function of ω0 for EF =200meV and τ=100 (black), 200 (blue), and300fs (red).

26 Apr 2021: ExperimentalFittingS2p3/2S2p1/2Defects component. 200 µm. Fig. 2 | Characterization of MS2 films and networks. ... 0 200 400 600 800 1,000 1,200 1,400 1,600–45. –42. –39.

21 Mar 2016: First, off-stoichiometry or. partial relaxation can produce magnetically biaxial behaviour31. below 200 K. ... G) 8.2] ratios, we derive a doping level <200 meV.42,43 Aftertransfer, a background signal [Fig.

20 Oct 2009: Despite the homogeneous schematisation of a probable densitygradient, the values Eit = 750-790 GPa, Gint = 300-395 GPa, Ext = 200-300 GPa, and Gext = 70-150 GPa could be determined. ... Ta-C:H Ta-C ta-csurf WWW-ta-C Diamond. E (GPa) 3004_9 757.547.5

15 Jul 2010: 0 200 400 600 800 1000 1200 1400. Phonon Frequency (cm ). 0. 0.002. 0.004. 0.006. 0.008. α F. ( ω)/. ω (. cm. ). -1. 8 % doping4 % doping. 2 % doping. ... 2 1 % doping. -1. TO CC stretching modes. 0 200 400 600 800 1000 1200 1400.

7 Apr 2020: To check this, we performed measurements of HT-2 with Au Biacore chips on a Biacore T-200, using the same protocol and achieved sensitivity1 ng/mL, as detailed in Supplementary ... A roadmap for graphene. Nature 490, 192–200,

15 Oct 2009: This was achieved using an ATI Unicam UV2-200 UV-VIS spectrometer over the 185 to 910 nm wavelength range. ... Similar spec-tra were found for films deposited at ion energies of between 150 and 200 eV.

7 Aug 2017: A stable, power scaling, graphene-mode-locked all-fiber oscillator. D. Popa,1,a) Z. Jiang,1 G. E. Bonacchini,1 Z. Zhao,1 L. Lombardi,1 F. Torrisi,1 A. K. Ott,1. E. Lidorikis,2 and A. C. Ferrari11Cambridge Graphene Centre, University of Cambridge,

20 Oct 2009: An a-C:H layerwas deposited with a PECVD system, at 200 W and 100mTorr pressure.

15 Oct 2009: 260 0. 9 C. 0 200 400 600 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 i8Incidenlt Pump Powr (m" Frequengy (GHz

2 Jul 2008: 250 300 350 400 450100. 150. 200. 250. E [GPa]. ν = 0.

20 Feb 2006: 40. 200. Data source: Open University (1995) “S268: Physical Resources and Environment” Block 3, pp6.

27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive

19 Jan 2017: ResultsPCCO characterization and Raman spectroscopy of SLG/PCCO. The PCCO (200-nm-thick) is grown by pulsed laserdeposition on (001) oriented SrTiO3 (STO) (see ‘Methods’) andhas a near-bulk superconducting transition ... The CVD-grown SLG is then

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

15 Jun 2006: 200,000 tonnes of plastic rubbish is being sent 8,000 miles to China each year for recycling. ... MJ/kg] 14 80 84 200 23Energy/Volume. [MJ/litre] 8.2 3.2 5.4 9.0 2.4.

27 Nov 2006: Filmthickness below 2 nm and roughness well below 1 nm are needed for storage density of 200 Gbityinch. ... with respect to S-bend FCVA filmsw43x. This is impor-tant since the process temperature for hard disk deposi-tion is ;200 8C.

13 Mar 2006: 0. 100. 200. 300. 400. 500. 600. 1952. 1954. 1956. 1958.

10 Jan 2013: nanotube mode-locked 2 lm solid-state lasers (e.g., 200 fs(Refs. 8, 9, and 52)), but shorter than previous graphene.

6 Dec 2006: If sound is fasterprobably has a density gradient. The final values arein the film, the partial localisation is always near theEint=750–790 GPa, Gint=300–395 GPa, Eext=200–surface ... ta-C ta-Csurf WWW-ta-C Diamond. E (GPa) 30049 757.547.5

11 Apr 2016: 1,100 1,500 2,400 2,800 3,200. 1st visible light illumination. 2nd. visible light illumination. ... 5e).In reality, the flakes (with average lateral sizes of 200 nm) formaggregates possessing a poor degree of order.

25 Mar 2013: Hasan, F. Wang, and A. C. Ferrari, “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl. ... The waveguide is inscribed by focusing the pulses, through a 0.4 NA lens, 200 µm below the substrate surface, by a master oscillator

21 Nov 2018: The buildup of the occupation of the lower CB statewithin the same valley is delayed, but still displays a short timeconstant 200 fs at 77 K. ... These are exfoliatedwith Nitto Denko tape, then further exfoliated on apolydimethylsiloxane (PDMS) stamp for