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Graphene Reflectarray Metasurface for Terahertz Beam Steering and…
www-g.eng.cam.ac.uk/nms/publications/pdf/Tamagone2018.pdf8 Jun 2018: Ag (140 nm) Al (60 nm). Pyrex support (525 m). Al2O3 (200 nm). ... Al2O3 (200 nm)SOI Si device (20 m). Ag (140 nm) Al (60 nm). -
Intravalley Spin–Flip Relaxation Dynamics in Single-Layer WS2
www-g.eng.cam.ac.uk/nms/publications/pdf/ZWang2018a.pdf21 Nov 2018: The buildup of the occupation of the lower CB statewithin the same valley is delayed, but still displays a short timeconstant 200 fs at 77 K. ... These are exfoliatedwith Nitto Denko tape, then further exfoliated on apolydimethylsiloxane (PDMS) stamp for -
Excitonic Emission of Monolayer Semiconductors Near-Field Coupled to…
www-g.eng.cam.ac.uk/nms/publications/pdf/Galy2018.pdf11 May 2018: Finally, the microdisks are undercut with potassiumhydroxide to form an air-clad whispering gallery mode (WGM)resonator.38 The microdisks sit on 200 μm Si Mesa pillars toprevent the tapered fiber ... The microdisk has aradius of 19 μm and sits on a 200 -
Electrically Controlled Nano and Micro Actuation in Memristive…
www-g.eng.cam.ac.uk/nms/publications/pdf/Kos2018.pdf5 Sep 2018: Scale bar: 200 µm. 1801599 (3 of 8). www.advancedsciencenews.com. 2018 WILEY-VCH Verlag GmbH & Co. -
Broadband, electrically tunable third-harmonic generation in graphene
www-g.eng.cam.ac.uk/nms/publications/pdf/Soavi2018.pdf23 May 2018: and (2) comparable to the time scale 150–200 fs needed to heat the optical phonon modes42–45, Te reaches a steady-state during the pulse, given by the following equation:. -
Broadband, electrically tunable third-harmonic generation in graphene
www-g.eng.cam.ac.uk/nms/publications/pdf/Soavi2018-Nanotech.pdf9 Jul 2018: and (2) comparable to the time scale 150–200 fs needed to heat the optical phonon modes42–45, Te reaches a steady-state during the pulse, given by the following equation:. -
Graphene-based integrated photonics for next-generation datacom and…
www-g.eng.cam.ac.uk/nms/publications/pdf/Romagnoli2018.pdf2 Oct 2018: Photonic devices need to support ultra- large bandwidth operation, for example, 200 Tb s1 in a single fibre9 and >10 Tb s1 cm2 in integrated Si photonics chips10. ... From equations 7 and 8 we get. From equation 9, τ 10 fs, 100 fs and 300 fs correspond
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