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320 340 360 380 400 420 440 Raman shift ...
www-g.eng.cam.ac.uk/nms/publications/pdf/SIPalacios.pdf4 Dec 2017: c, Fine. structure splitting values of the 1L-WSe2 QEs, which lie within the range 200-700 µeV. ... values observed for WSe2 QEs. The values are in the range 200 – 900 µeV, overlapping those. -
PHYSICAL REVIEW E 94, 063002 (2016) Inverted cones and ...
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2016PREC.pdf6 Jan 2017: a). 0 200 4000. 0.02. 0.04. 0.06. d / t. F / E. ... t2. (b). 0 200 400 6000. 0.05. 0.1. d / t. -
Lettershttps://doi.org/10.1038/s41565-017-0008-8 Out-of-plane heat…
www-g.eng.cam.ac.uk/nms/publications/pdf/SITielrooij.pdf4 Dec 2017: ics (at least above a lattice temperature of 200 K) instead of the predicted non-exponential. ... graphene sandwich with dimensions >200 µm, prepared as in Ref. [S20] and transferred inside a. -
Vertically Illuminated, Resonant Cavity Enhanced, Graphene–Silicon…
www-g.eng.cam.ac.uk/nms/publications/pdf/Casalinos.pdf4 Dec 2017: Figure 2 shows asimulation of SLG absorption in the integrated FP cavity PD.For this we use the transfer matrix method48 and a cavity lengthL = 200 μm. ... described in Methods. The PDs are fabricated on a double-polished, low-doped (NA 1015cm3, p-type, -
Terahertz saturable absorbers from liquid phase exfoliation of…
www-g.eng.cam.ac.uk/nms/publications/pdf/Bianchi.pdf20 Jun 2017: ethanol-based (GEth) inks from the visible to near-infrared range. a. 200 nm 100 nm. ... smitt. ance. 100. 200. 300. –6,000 –3,000 0 3,000 6,000. Rad. -
Large-scale quantum-emitter arrays in atomically thin semiconductors
www-g.eng.cam.ac.uk/nms/publications/pdf/Palacios.pdf20 Jun 2017: The fine-structure splitting(200–730 meV) and the emission linewidths as narrow asB180 meV (B0.08 nm) are also consistent with previousreports11–15 (Supplementary Fig. ... 1d,. taken under 200 nW mm2, 532 nm laser excitation at 10 K. -
TNANO2674303
www-g.eng.cam.ac.uk/nms/publications/pdf/bach.pdf7 Apr 2017: II. MEMORY DEVICE AND CHARACTERISATION. The memory devices consist of Pt (W) bottom (top) elec-trodes and a SiO2 layer that has cylindrical openings of50 nm, 100 nm and 200 nm ... pulses. For noise reduction a 200 MHz software filter is applied tothe -
A stable, power scaling, graphene-mode-locked all-fiber oscillator D. …
www-g.eng.cam.ac.uk/nms/publications/pdf/Popa21.pdf7 Aug 2017: A stable, power scaling, graphene-mode-locked all-fiber oscillator. D. Popa,1,a) Z. Jiang,1 G. E. Bonacchini,1 Z. Zhao,1 L. Lombardi,1 F. Torrisi,1 A. K. Ott,1. E. Lidorikis,2 and A. C. Ferrari11Cambridge Graphene Centre, University of Cambridge, -
Graphene-based mid-infrared room-temperature pyroelectric bolometers…
www-g.eng.cam.ac.uk/nms/publications/pdf/Sassi17.pdf1 Feb 2017: 3 –2 –1 0 1 2 3 0 200 400 600 800 1,000. ... The D peak region at B1,350 cm1 isconvoluted with a band at 1,200–1,450 cm1 arising from optical phonons inLN51. -
p-wave triggered superconductivity in single-layer graphene on an…
www-g.eng.cam.ac.uk/nms/publications/pdf/Bernardi.pdf19 Jan 2017: ResultsPCCO characterization and Raman spectroscopy of SLG/PCCO. The PCCO (200-nm-thick) is grown by pulsed laserdeposition on (001) oriented SrTiO3 (STO) (see ‘Methods’) andhas a near-bulk superconducting transition ... The CVD-grown SLG is then -
Spider silk reinforced by graphene or carbon nanotubes
www-g.eng.cam.ac.uk/nms/publications/pdf/Lepore.pdf22 Aug 2017: The dispersions are ultracentrifuged using a TH-641 swinging bucket rotor in a Sorvall WX-100 at 200 000 g for 2 h at 18 C to remove bundles and other ... This could be due to the shape of the flakes. The lateral characteristic dimen-sions of our flakes -
Graphene and Related Materials for Resistive Random Access Memories
www-g.eng.cam.ac.uk/nms/publications/pdf/Hui.pdf20 Jun 2017: up to 200 C). v) As the switching takes place through nano-sale CFs,[35] the area of the cell is just limited by the area of the CF (typically tens ... reset). 80% No [192]. ITO/SLG/ZnO/ITO CVD. (Transfer)200 µm. in diameter. 20 – 104 >100 – – Yes
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