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GPD07 Proceedings p444-467
www-g.eng.cam.ac.uk/gft/media/PG%20projects/Kenneth%20Publications/GPD07-Overend.pdf13 Oct 2009: ESDU[11], [12]. ASCE[13]. AS/NZS[14]. FullScale. CFD. Basic wind speed1 (m/s). 26.74 24 26.74 39.13 39.13 26.742 26.742. -
CNT arrays for photonics - nanotechweb.org
www-g.eng.cam.ac.uk/nms/highlights-press/cnt_photonics.pdf24 Apr 2009: CNT arrays for photonics - nanotechweb.org http://nanotechweb.org/cws/article/tech/38812. 1 of 2 2009/4/24 15:27. ... nanotechweb.org. TECHNOLOGY UPDATE. Apr 24, 2009. Carbon nanotube arrays could be employed in photonic devices like deep-UV photonic -
Small Diameter Membrane Reflector Structures M. Santer∗ Imperial…
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009ConfAIAAb.pdf9 Mar 2009: d2sb =. 4λψ2δ5tD3. π2n. (EmEs. )(24). and hence the mass msb of the offset struts to provide adequate resistance against buckling is. -
PII: S0925-9635(00)00479-9
www-g.eng.cam.ac.uk/nms/publications/pdf/MilneDRM2001.pdf15 Oct 2009: Recently,a a. Ferrari and Robertson 24 have shown from their workŽ. ... Lett. 76. Ž. Ž. 18 2000 2627. Ž. 24 A.C. Ferrari, J. -
Conceptual Design for a Laminar Flying Wing Aircraft
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009ConfAIAA.pdf7 Jul 2009: Conceptual Design for a Laminar Flying Wing Aircraft. T.I. Saeed , W.R. Graham†† , H. Babinsky ‡ , J.P. Eastwood , C.A. Hall , J.P. Jarrett ‖,. M.M. Lone and K.A. Seffen ††. Department of Engineering, University of Cambridge, Trumpington -
RAMAN SIGNATURE OF BONDING AND DISORDER IN CARBONS A ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Ferrari_mrs99raman.pdf20 Oct 2009: 8. This isvalidated by NMR and EELS data where available [24], as shown in the Figure. ... 1990)23. J. Robertson, Phys Rev B 53, 16302 (1996)24. M. A. -
Fabrication of graphene nanoribbons via nanowire lithography
www-g.eng.cam.ac.uk/nms/publications/pdf/Fasoli_PSSB2009.pdf8 Dec 2009: Similar to the case of nanotubes, confinement modifiesthe electronic structure of graphene, when cut intonanoribbons [18–24]. ... Harrison, Phys.Rev. B 75, 064418 (2007). [24] K. Nakada, M. Igami, and M. -
3348:Regular Journal Pgs.qxd.qxd
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009AeroJ.pdf30 Oct 2009: The segmented primary reflector will consist of 18 hexagonalBeryllium (Be) 132m flat-to-flat segments, using heritagetechnology from the Spitzer mission(23,24). -
ELASTIC CONSTANTS OF DIAMOND LIKE CARBON FILMSBY SURFACE BRILLOUIN ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Ferrari_mrs99.pdf20 Oct 2009: lay. 3.24 63.5ta-C:H 70% 28.4 2.35 70 6 30%ta-C:H 28.4 2.35 43. ... of 3.24 g/cm 3 [11]. -
/home/journal/dvi/EPJD013-EPJD-final-print.dvi
www-g.eng.cam.ac.uk/nms/publications/pdf/Milani_1999_EurPJD.pdf2 Feb 2009: All these parameters arein agreement with a more pronounced graphitic ordering ofthe sample [24]. ... Opt. 23, 3806 (1984)24. J. Robertson: Prog. Solid State Chem. 21, 199 (1991)25. -
was estimated to be 5 × 1016 m−2 on ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Elias_Science2009.pdf1 Feb 2009: Y. S. Li, N. R. Tao, K. Lu, Acta Mater. 56, 230 (2008).24. ... state by annealing (we used 450C in Ar atmo-sphere for 24 hours; higher annealing T dam-aged graphene). -
The Ultrasmoothness ofDiamond-like Carbon SurfacesMichael…
www-g.eng.cam.ac.uk/nms/publications/pdf/Moseler_SCI2005.pdf15 Oct 2009: The PSD of EW sur-faces can be calculated analytically (24):. bkhkðsÞk2À 0 ej2nk2 sbkhkð0Þk2À þ. ... 2À þ k9k0 bkhk(s)k2À (24) witha cutoff k0 0 2p/2.35 nm. -
Phonon renormalization in doped bilayer graphene A. Das,1 B. ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Das_PRB2009.pdf14 Apr 2009: D peak: the 2Dpeak.18 This lies at 2690 cm1 and involves phonons atK q.18,24 q depends on the excitation energy, due todouble resonance, and the linear dispersion of ... Lett. 91, 233108 2007.24 A. C. Ferrari, Solid State Commun. 143, 47 2007.25 A. -
Hasan_JPCC2008
www-g.eng.cam.ac.uk/nms/publications/pdf/Hasan_JPCC2008.pdf21 Jan 2009: either due to the dispersant molecules surroundingthe SWNTs8,9,11,24 or to the presence of SWNT bundles.41-44. ... L.; Heinz, T. F. Phys. ReV. Lett. 2006, 96,167401. (24) Walsh, A. -
doi:10.1016/j.diamond.2005.01.023
www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_DRM2005.pdf15 Oct 2009: Model a b. EW 0 0. KPZ 0.38 0.24. MBE 1 1/4. ... sputtering (BMS) [50]. The growth exponent for MS a-C films is 0.24,. -
Plasma restructuring of catalysts for chemical vapor deposition of ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Cantoro_JAP2009.pdf24 Mar 2009: 064304-2 Cantoro et al. J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. ... J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. -
Top-Gated Silicon Nanowire Transistorsin a Single Fabrication…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_ACSNANO2009.pdf26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett -
The Preparation, Characterization and Tribological Properties of…
www-g.eng.cam.ac.uk/nms/publications/pdf/Morrison_PSSA1999.pdf15 Oct 2009: Therefore, to a first order, the effect of neutraland radical species can be neglected and the deposition process may be described by asubplantation model of subsurface growth [24, 25]. ... Mater. 4,. 366 (1995).[23] K. Enke, Thin Solid Films 80, 227 -
st148018.dvi
www-g.eng.cam.ac.uk/nms/publications/pdf/PiscanecEPJ2007.pdf15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B. -
Electron-electron interactions and doping dependence of the…
www-g.eng.cam.ac.uk/nms/publications/pdf/basko_PRB2009.pdf20 Oct 2009: 24, 26, 32, 33,and 36. The G peak position, PosG, increases and its fullwidth at half maximum, FWHMG, decreases for both elec-tron and hole doping. ... 24 C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A.
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