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12 Apr 2021: Biscaras and A. Shukla, Nanotechnology,. 2013, 24, 415708.17 L. Quan, et al., J. ... Bull., 2002, 37,. 169.24 R. M. Hoff, J. C. Irwin and R.

8 Feb 2021: σ̄(3)xxxx(ω, EF , 0) =17G(2|EF |, ω+) 64G(2|EF |, 2ω+)|. 24(ω+)4. ... 45G(2|EF |, 3ω+). 24(ω+)4(S1). 1. Supplementary Fig. 1. THG power dependence.

26 Apr 2021: Chem. Soc. Rev. 44, 7715–7736 (2015). 24. Sim, D. M. et al. ... 24, 6524–6531 (2014). 41. Li, S.-L., Tsukagoshi, K., Orgiu, E. & Samorì, P.

9 Jun 2021: Au/WS2/P ZT/Au 24.3 3.5 0 µA / 0 µW 0.15 µA / 0.53 µW 10 S36.

7 Jan 2021: Such antenna geometries arewidely used in THz optoelectronics [2, 4, 24, 31] and bothenable broadband operation [2, 32]. ... drain (d) edge-electrodes based on a coplanar strip-line (CPS) geometry [24], Figure 1B.

4 Aug 2021: Second, GO can be prepared inexpensively via LPE. Spray-coating allows conformal coverage surfaces with complex shapes.[24] This approach is very attrac-tive from an industrial point of view. ... Park, M.-J. Park, J.-S. Lee, Adv. Funct. Mater. 2018, 28,

7 Jan 2021: This would allow THzQCL FCSs to be fully stabilized against primary frequencystandards.24. ... a multiheterodyne detectionscheme, in which the QCL-comb was mixed with a fullystabilized optically rectified THz-frequency comb.24.

16 Dec 2021: Box 5046, 2600 GA Delft, Netherlands. (Received 24 May 2021; accepted 16 September 2021; published 30 November 2021). ... state host for scalable fabrication of quantum light-matterinterfaces [23], enabling all-optical control [24–27].

15 Feb 2021: 61. calculated S for LO phonons as a function of the polarizationparameter for 1L-MoSe2, finding 1.93–2.24. ... B 56, 1077–1080 (1997). 24. Scarpelli, L. et al. Resonantly excited exciton dynamics in two-dimensionalMoSe2 monolayers.

1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors.

27 Apr 2021: Dint(μ) = ωμ ω0 μD1 = D2μ2/2 D3μ3/6 D4μ4/24. , is shown in Figure 3b, top. ... Nano Lett.2014, 14, 62316236.(24) Robert, C.; Picard, R.; Lagarde, D.; Wang, G.; Echeverry, J.

9 Jun 2021: Graphene-basedoptoelectronic devices are compatible with Si platforms16,24–27.Therefore, graphene-based OEMs could combine telecomoperation and CMOS compatibility. ... 24. Pospischil, A. et al. CMOS-compatible graphene photodetector covering alloptical

16 Jun 2021: ount. s). 0. 6. 12. 18. 24. x20. x4. x1. Fig. ... Nat. Mater. 13, 247–252 (2013). 24. Byrnes, T. et al. Exciton-polariton condensates.

16 Jun 2021: S12), from which we extract τs =24.24.0 ns and τl =3.530.09 µs (red), τs =104.6 2.7ns. ... This is in agreement with. Refs. [24, 25]. We extract and show in Supplementary Fig.

25 Jan 2021: J. Phys. Condens. Matter 23, 334205 (2011). 24. Ursaki, V. et al.

23 Mar 2021: multiple SLGs.[17,22] At THz frequencies, however, interband transitions are usually blocked due to the fact that as-prepared SLG is doped,[23,24] hence intraband electronic transi-tions dominate ... Coleman, et al., 2D. Mater. 2020, 7, 022001. [24] K. F

18 Jun 2021: Sel. Top. Quantum Electron. 24, 1–12 (2018).16. Nagarajan, R. et al. ... Nat. Photonics 7, 883–887 (2013).24. Wang, X., Cheng, Z., Xu, K., Tsang, H.

16 Dec 2021: coefficient of resistance.24 Single-crystal (SC)CVD SLG, coupled to photonic waveguides, was used forultrafast, zero-dark-current telecom photodetectors (PDs) fordatacoms,25 and wafer-scale integration of electro-absorptionmodulators ... We also evaluate

9 Jun 2021: We perform Raman mea-surements at 785 nm, the available Raman wavelength closest tothat used in HAMR (830 nm25,55), with a spot size 1.24 μm, asdetermined by the razor ... 75 on a 0.24 cm2. area, is investigated using an electrochemical corrosionmethod51

7 Jan 2021: For these, the dominant detectionmechanism can be tailored by design.21 Their ultrafastdynamics22 and the ease of fabrication23,24 and integration25. ... C. Production and processing of graphene and 2dcrystals. Mater. Today 2012, 15, 564589.(24) Ferrari,

1 Mar 2021: 24 Siliconphotonics (SiPh) modulators for 30 Gbaud applications haveIL 23 dB higher than InP- and LiNbO3-basedmodulators,25 because of the free carrier effect,26 requiringdevice lengths in the mm scale. ... copy. We collect 8909 spectra on 48 crystals

27 Jan 2021: photoexcitation.16,17 As a result of theseproperties, along with the ability to fabricate TMDs onwafer-scale,3,1820 these have found applications in photo-detectors,2123 photovoltaics,24 ... Progress, Challenges,and Opportunities for 2D Material Based

26 Jan 2021: 23,24 and subsequently transferredto fluorine-doped Tin Oxide (FTO), the most common. ... in condition to react to lightby the mediation of a light-absorbing molecule, i.e., the dye)21,24.

21 Sep 2021: m m m m m m m m24 7 (P11a) m 1 m 1 or m Equivalent Hall numbers: 22 (P1n1) 21, 25 (P11n) 24, 26 (P11b) 24, 27 (Pb11) 23, ... 222 / 2 or 222 / 124 24 (I212121) 222 2 / 222 / 2 or 222 / 125 25 (Pmm2) mm2 mm2 mm2 mm2 mm2 mm2 mm2 mm2126 25 (P2mm) mm2 m mm2 m