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11 - 20 of 30 search results for :pc53 24 / |u:www-g.eng.cam.ac.uk where 0 match all words and 30 match some words.

  1. Results that match 1 of 2 words

  2. was estimated to be 5 × 1016 m−2 on ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Elias_Science2009.pdf
    1 Feb 2009: Y. S. Li, N. R. Tao, K. Lu, Acta Mater. 56, 230 (2008).24. ... state by annealing (we used 450C in Ar atmo-sphere for 24 hours; higher annealing T dam-aged graphene).

  3. The Ultrasmoothness ofDiamond-like Carbon SurfacesMichael…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Moseler_SCI2005.pdf
    15 Oct 2009: The PSD of EW sur-faces can be calculated analytically (24):. bkhkðsÞk2À 0 ej2nk2 sbkhkð0Þk2À þ. ... 2À þ k9k0 bkhk(s)k2À (24) witha cutoff k0 0 2p/2.35 nm.

  4. Phonon renormalization in doped bilayer graphene A. Das,1 B. ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Das_PRB2009.pdf
    14 Apr 2009: D peak: the 2Dpeak.18 This lies at 2690 cm1 and involves phonons atK q.18,24 q depends on the excitation energy, due todouble resonance, and the linear dispersion of ... Lett. 91, 233108 2007.24 A. C. Ferrari, Solid State Commun. 143, 47 2007.25 A.

  5. Hasan_JPCC2008

    www-g.eng.cam.ac.uk/nms/publications/pdf/Hasan_JPCC2008.pdf
    21 Jan 2009: either due to the dispersant molecules surroundingthe SWNTs8,9,11,24 or to the presence of SWNT bundles.41-44. ... L.; Heinz, T. F. Phys. ReV. Lett. 2006, 96,167401. (24) Walsh, A.

  6. doi:10.1016/j.diamond.2005.01.023

    www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_DRM2005.pdf
    15 Oct 2009: Model a b. EW 0 0. KPZ 0.38 0.24. MBE 1 1/4. ... sputtering (BMS) [50]. The growth exponent for MS a-C films is 0.24,.

  7. Plasma restructuring of catalysts for chemical vapor deposition of ...

    www-g.eng.cam.ac.uk/nms/publications/pdf/Cantoro_JAP2009.pdf
    24 Mar 2009: 064304-2 Cantoro et al. J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. ... J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169.

  8. Top-Gated Silicon Nanowire Transistorsin a Single Fabrication…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_ACSNANO2009.pdf
    26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett

  9. The Preparation, Characterization and Tribological Properties of…

    www-g.eng.cam.ac.uk/nms/publications/pdf/Morrison_PSSA1999.pdf
    15 Oct 2009: Therefore, to a first order, the effect of neutraland radical species can be neglected and the deposition process may be described by asubplantation model of subsurface growth [24, 25]. ... Mater. 4,. 366 (1995).[23] K. Enke, Thin Solid Films 80, 227

  10. st148018.dvi

    www-g.eng.cam.ac.uk/nms/publications/pdf/PiscanecEPJ2007.pdf
    15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B.

  11. Electron-electron interactions and doping dependence of the…

    www-g.eng.cam.ac.uk/nms/publications/pdf/basko_PRB2009.pdf
    20 Oct 2009: 24, 26, 32, 33,and 36. The G peak position, PosG, increases and its fullwidth at half maximum, FWHMG, decreases for both elec-tron and hole doping. ... 24 C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A.

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