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8 Jun 2018: Furthermore, highmobility of SLG allows mid infrared plasmon-polaritons,also tuneable by gating[24, 25]. ... From Eq. 22 we get:. γR =(RON ROFF)2(1 ω2τ2). 4 RON ROFF' 0.856 (24).

25 Jan 2008: 24. 35 dq. dĈ. " #C/:. ð4:3ÞTo find equilibrium configurations of the structure, we look for points where. ... K̂ Zv2Û=vq2 v2Û=vq vĈ. v2Û=vq vĈ v2Û=vĈ2. 24. 35; ð4:5Þ. is positive definite.

17 Apr 2023: potential landscape due to spatial variations in layer separationand twist angle.23,24. ... Nat.Phys. 2021, 17, 720725.(24) Andrei, E. Y.; Efetov, D. K.; Jarillo-Herrero, P.; MacDonald, A.H.; Mak, K.

26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett

14 Feb 2014: reports.10,20,24 This is interpreted as due to the larger gate. length, as predicted by the photo-induced voltage equation:15. ... Teppe, A. Tredicucci, and T. Nagatsuma,. Nanotechnology 24, 214002 (2013).11A. Lisauskas, S.

9 Jul 2018: Te = 1,000 K. Te = 300 K. THGE. –0.24 eV–0.39 eV–0.42 eV–0.44 eV–0.48 eV. ... 24. Saynatjoki, A. et al. Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers.

25 Mar 2022: on SMILES-represented reaction and associated reactionconditions,43 and Rel-GAT (Relational Graph AttentionNeural Network) previously evaluated on Suzuki and severalother coupling reactions.24.

21 May 2010: The spectra can be deconvo-luted in two Gaussians centered at 1.35 and 1.76 eV, witha full width at half-maximum (FWHM) of 0.28 and 0.24 ... In addi-tion, we observed that controlled oxidation with meta-chloroperbenzoic acid (MCPBA)24 does not increase

25 Jul 2023: Appl. Phys. Lett. 103, 183112 (2013). 24. Sünner, T. et al.

25 Nov 2016: nonlinear spectroscopy, in the pump-probe [24] and SRS [23] configurations. Since both techniques use the same experimental approach to extract the differential signal, for the sake of clarity we will ... Express, vol. 23, pp. 25235–25246, 2015. [24] F.

11 Jun 2006: litre. Grid Electricity1 0.43 - -Natural Gas 0.19 - -. Fuel Oil 0.27 3223 -Diesel 0.25 3164 2.63Petrol 0.24 3135 2.30.

25 Jul 2023: potential landscape due to spatial variations in layer separationand twist angle.23,24. ... Nat.Phys. 2021, 17, 720725.(24) Andrei, E. Y.; Efetov, D. K.; Jarillo-Herrero, P.; MacDonald, A.H.; Mak, K.

6 Mar 2014: B dependence can beexplained through the Slonczewski-Weiss-McClure (SWM)model [22–24]. ... q̃ = 2mlB V1. kzmV1. cos θ. sin2 θ V 24/V 21 cos.

23 Feb 2010: passively mode-lock an erbium-doped fiber laser working at 1559 nm, with a 5.24 nm spectral bandwidth and. ... arXiv:0908.0154, 2009. 24. Eberlein, T.; Bangert, U.; Nair, R. R.; Jones, R.; Gass, M.;Bleloch, A.

15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B.

15 Oct 2009: Therefore, to a first order, the effect of neutraland radical species can be neglected and the deposition process may be described by asubplantation model of subsurface growth [24, 25]. ... Mater. 4,. 366 (1995).[23] K. Enke, Thin Solid Films 80, 227

10 Nov 2014: ARTICLE. Received 24 Jan 2014 | Accepted 19 Sep 2014 | Published 10 Nov 2014. ... The G peakcorresponds to the high-frequency E2g phonon at G. The Dpeak is due to the breathing modes of six-atom rings and requiresa defect for its activation16,22–24.

26 Jan 2021: 23,24 and subsequently transferredto fluorine-doped Tin Oxide (FTO), the most common. ... in condition to react to lightby the mediation of a light-absorbing molecule, i.e., the dye)21,24.

20 Oct 2009: 24, 26, 32, 33,and 36. The G peak position, PosG, increases and its fullwidth at half maximum, FWHMG, decreases for both elec-tron and hole doping. ... 24 C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A.

4 Feb 2014: Bandgap engineering is usually attempted by patterning into graphene nanoribbons (GNRs) (24,11), but GNRs tend to have low mobilities (<200 cm2V1s1) (27) as a consequence of carrier scattering on disordered ... 6, no. 24, pp. 2822-2825, 2010. (26) X. Yang

6 Jan 2011: We alsotested the Ni (001)graphene system because it has been re-ported that a single C atom is strongly attracted to the Ni(001)surface.24 For the graphene ... 24. Borjesson, A.; Zhu, W.; Amara, H.; Bichara, C.; Bolton, K.Computational Studies of

3 Dec 2012: 03/12/2012 It's not exactly HARDware. Nokia and Samsung in race to launch 'flexible' mobile phones during 2013 - News - Gadgets & Tech - The Independent.

5 Sep 2018: When exfoliated frombulk to single layer (1L), they undergo an indirect-to-directgap transition,24 offering a platform for electronic andoptoelectronic applications,1,2,5 such as transistors,68 ... Electric-double-layer field-effecttransistors with ionic

30 Aug 2011: 2. 2. 4. 4. 4. 6. 6. 10. 10. 24. 20. ... Appl. Phys. Lett. 91, 063124 (2007).24. Abergel, D. S. L., Russell, A. &

6 Feb 2014: received 24 May 2013; accepted in final form 17 June 2013published online 2 July 2013. ... Γ(Tx,Ty) 2 1 1 2 0 0= 24 0 0 0 0 0.

11 Nov 2013: Nanotechnology2013, 24, 265102. 10. Liu, Z.; Tabakman, S. M.; Chen, Z.; Dai, H.

3 May 2011: Published: March 24, 2011. r 2011 American Chemical Society 5941 dx.doi.org/10.1021/ja110939a |J. ... 2007, 7,2711.(24) Blake, P.; Hill, E. W.; Neto, A. H. C.; Novoselov, K.

14 Oct 2015: as a hyperelastic material usingthe Mooney-Rivlin fit with parameters E 1.23 MPa,C1 0.205 MPa, C2 0 MPa (corresponding to a 24-hour cure at 60 C) [49]. ... 24] Z. Xu, Z. Liu, H. Sun, and C. Gao, Highly electricallyconductive Ag-doped graphene fibers as

20 Jun 2012: 0.16. 0.18. 0.2. 0.22. 0.24. 0.26. 0.28. 0.3. 0.32. 1000 1020 1040 1060 1080 1100 1120 1140. ... Mater. 21, 3874-3899 (2009). [24] Z. Sun,T. Hasan and A. C.

21 Jun 2010: These have been used to mode-lock fiber [8–23], waveguide [24], solid-state [25–27], and semiconductor lasers [28]. ... Langmuir 2008, 24, 5070–5078. [37] Hasan, T; Tan, P. H.; Bonaccorso, F; Rozhin, A.

27 Nov 2006: Byplotting j vs. time, this givesbya;0.24 w34x. Usingour a value, we find an independent value ofb between0.006 and 0.12.

20 Jul 2020: transducers,24 which can be operatedat extremely high frequencies (up to several THz5). ... Continuous wave (CW) optical spectroscopies, like PL andabsorption, revealed signatures of excitonphonon interactionin 1L-TMDs.2326 This gives rise to peculiar

22 Nov 2013: Ultrashort laser pulses squeezed out of graphene. 24 May 2013. Graphene: The quest for supercarbon : Nature News & Comment http://www.nature.com/news/graphene-the-quest-for-supercarbon-1.14193.

2 Feb 2016: Pos(G), Figure 1e, and FWHM(G), Figure 1f,are 1583 and 24 cm1. ... H.; Seifert, M.; Garrido, J. A. Graphene Transistors forBioelectronics. Proc. IEEE 2013, 101, 17801792.(24) Sanchez, V.

8 Jan 2007: These films are usually deposited by plasma-enhanced. chemical vapor deposition (PECVD) at low bias voltage22-24. ... For a 100 nm a-C:H-coated bottle, the OTR is reduced. to 0.0008 cc/package/24 hours from the 0.04 cc/package/24 hours of.

18 Oct 2012: 24. S. Y. Set, H. Yaguchi, Y. Tanaka, and M. Jablonski, “Ultrafast fiber pulsed lasers incorporating carbon nanotubes,”IEEE J. ... Nanotubes have mode-lockedfiber [18, 24–29], waveguide [30, 31], solid-state [32–34] and semiconductor lasers [35],

14 Dec 2013: Mater.21, 3874-3899 (2009). 24. Z. Sun, T. Hasan, F. Torrisi, D. ... Dueto its low-cost fabrication and assembly [16, 23, 24], graphene based saturable absorbers haveemerged as a promising saturable absorber (SA) for ultrafast pulse generation.

31 May 2011: Rev. Lett. 98, 196803 (2007).[24] B. Huang et al., arXiv:0708.1795v1.[25] H.

17 Jun 2022: producing aspatially modulated interlayer registry, known as moire ́superlattice.24 This can lead to superconductivity5 andMott-like insulator states6 in twisted graphene bilayers, long-lived interlayer excitonic states in monolayer (1L)

27 Mar 2023: 123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960. Acc. epte. d M. anus. crip. t. 2. technology[8]. For applications in the short-wave in-frared (SWIR) (1000-2500nm/1.24-0.5eV), beyond

5 Jun 2014: These results arecomparable to those obtained with SWNTs at 1 μm.23,24. ... Opt. Lett. 2009, 34, 3526–3528. 24. Kelleher, E. J. R.; Travers, J.

28 Jul 2009: GO can be subse-quently reduced to graphene,23 but leavesa significant number of defects that disruptthe electronic properties.24 Recently, much. ... Nano Lett. 2008, 8,4283–4287. 24. Mkhoyan, K. A.; Contryman, A. W.; Silcox, J.; Stewart, D.

27 Oct 2009: Gold nanorods (AuNRs) have size-tunable optical properties, facile surfacechemistry, and appropriate scale for manyapplications in biology and medicine.23,24. ... J. Nanobiotechnol. 2004, 2, 3. 24. Kneipp, J. H.; Kneipp, H.; McLaughlin, M.; Brown,

30 Oct 2009: stress transfer[24] and the fracture processes in unidirec-. tional,[25] but also multidirectional,[26] composites. ... H. Hong, Nature 2009, 457, 706.[24] N. Melanitis, C. Galiotis, Proc.

4 Dec 2006: For rings containing N a contribu-tion between 1400 and 1500 cm21 from NvN vibrations hasbeen suggested,24 but it seems unphysical at low nitrogecontents.

23 Dec 2014: Science 335, 947–950 (2012). 24. Rojo, A. G. Electron-drag effects in coupled electron systems.

1 Feb 2017: Avouris, P. Ultrafastgraphene photodetector. Nat. Nanotechnol. 4, 839–843 (2009). 24.

9 May 2012: alignment. The films demonstrated optoelectroniccharacteristics nearing the ITO benchmark and superiorcharacteristics to competing organic technologies such asTDA and PEG-enhanced PEDOT:PSS [24, 25]. ... 45, no. 5, pp. 913–921,2007. [24] B. D. Martin, N

20 Jun 2012: Further data analysis reveals that microcavity-controlled thermal radiation is emitted into a narrow lobe with a total angular width of 24 (FWHM) only (see Supplementary Methods and Supplementary Fig. ... 24. Casiraghi, C. et al. Rayleigh imaging of

18 Dec 2007: 12b correspond to deviceswith 7, 24, and 10 SiNWs for types I, II, and III, respec-tively. ... Curvescorrespond to devices with 7, 24, and 10 SiNWs for types I, II, and III,respectively.