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1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors.

17 Aug 2023: large nonlinear optical response12,22 with a power transmissionmodulation of 50% per monolayer,911,21 ultrafast photo-excitation dynamics and recovery time,22,23 high chemical andmechanical stability,24 large ... EF. The conductivity has the typical

21 Jan 2009: either due to the dispersant molecules surroundingthe SWNTs8,9,11,24 or to the presence of SWNT bundles.41-44. ... L.; Heinz, T. F. Phys. ReV. Lett. 2006, 96,167401. (24) Walsh, A.

18 Dec 2007: s crystal orienta-tion.24-26 Yu et al. ... R.; Hanein, Y.J. Phys. Chem. B2006, 110, 21419.(24) Ago, H.; Nakamura, K.; Ikeda, K.; Uehara, N.; Ishigami, N.; Tsuji,.

27 May 2016: 14,24,25 i.e., ahigher defects density increases both the sub-bandgap opticalabsorption and thermal generation processes,14 thus increasingboth Iph and Idark. ... Appl. Phys. Lett. 2010, 96 (10), 101103.(24) Bradley, J. D. B.; Jessop, P.

28 Oct 2010: diative and nonradiative dipole fields. Since eq 24 does not consider multiple reflections. ... tions of eq 6 (near-field) and eq 24 (full-field). As ex-.

30 May 2013: We measure a SLG, grown by chemical vapor depositionon copper [23,24] and transferred onto Si=SiO2 [25], fol-lowing the procedures discussed in the SupplementalMaterial [26]. ... Li et al., Science 324, 1312 (2009).[24] S. Bae et al., Nat.

14 Aug 2011: not the same ΓG, this being much bigger instage 2.24,28,29. ... J. Appl. Phys. 2001,90, 5002–5012.(24) Ferrari, A. C.; Rodil, S. E.; Robertson, J.

30 May 2012: that this result is in contrast to previous models where thecapacitance of a similar size dot was lower than anticipatedtheoretically,24 demonstrating the sensitivity of such estimatesto screening effects.

15 Oct 2009: Model a b. EW 0 0. KPZ 0.38 0.24. MBE 1 1/4. ... sputtering (BMS) [50]. The growth exponent for MS a-C films is 0.24,.

24 Dec 2015: the second harmonic generation from reference materials,for example, beta barium borate or iron(III) iodate crystals.24. ... IEEE Photon. Technol. Lett.2012, 24, 17921794.(16) Li, B.; Cheng, Y.; Liu, J.; Yi, C.; Brown, A.

25 Jan 2021: J. Phys. Condens. Matter 23, 334205 (2011). 24. Ursaki, V. et al.

16 May 2023: Light: Sci. Appl. 9, 51 (2020). 24. Piccardo, M. & Capasso, F. ... Opt. Express 24, 23232–23247 (2016). 52. Jirauschek, C., Riesch, M. & Tzenov, P.

12 Jul 2012: Mater. Lett. 1995, 24, 181–188. 19. Lo, W.; Cardwell, D. A.; Shi, Y. ... 2002, 15, 679–682. 24. Chikkannanavar, S. B.; Smith, B. W.; Luzzi, D.

13 Mar 2012: DecoupledSLG may exist on the surface of bulk graphite.23,24 To avoidcontributions from such SLGs, we recorded the spectra ofseveral locations to select a region with a bulk graphitelikeRaman spectrum, ... 080(5) 0.041(10) 0.08(3) 0.044(5) 0.044(24) 2γ5

14 Jan 2019: The most widely studied layered material heterostructure isSLG encapsulated in hexagonal boron nitride (hBN)18–24. ... Of 13 Hall bars with W rangingfrom 3 up to 24 μm, all exhibit peak room temperature mobilities>100,000 cm2 V1 s1.

13 Nov 2006: Nominally sub-eutectic NW syn-thesis using Au as catalyst has been achieved for severalsemiconductor materials, including Ge [22], InP [23], andZnSe [24]. ... 5, 761 (2005)24 A. Colli, S. Hofmann, A.C. Ferrari, C. Ducati, F.

31 Jul 2015: 24. 35 10. 0. 24. 352. a2 cos(φ)2 (8). As discussed above, the LBMs in the t(1þ3)LG are Ramanactive, except LBM42 (Raman inactive). ... Phys. Rev. B:Condens. Matter Mater. Phys. 2011, 84, 035419. 24. Lui, C.

5 Jun 2014: 3HT and (b) 24% GNR with P3HT. The insets show the scan at a larger. ... 23 V, for 0%, 11%, and 24% blends. However, itwas slightly higher, ca.

Bidirectional multimode-fiber communication links using dual-purpose vertical-cavity devices", J D Ingham, R V Penty and I H White, IEEE/OSA Journal of Lightwave Technology, Vol 24, pp ... Nonlinear two-moded single-fibre interferometric switch", R V

20 Aug 2008: The hysteresis observed in Figure 3a when reversing thegate sweeping direction is generally thought to arise fromcharge trapping at surface states or defects in the oxide.14,23,24. ... E.; Johnson, A. T. Appl. Phys. Lett. 2005, 87, 193104.(24) Weber, W.

20 Jul 2023: and doping21,24 of hBN encapsulated TMDs have been assessedthrough correlation with their optical emission.20,21,24 Theseresults have shown that nanoscale heterogeneities in doping andstrain exist in TMD-based ... devices.20,21,24.

18 Sep 2007: carbon nanotubes, and viruses.24-28 Rayleigh scatteringexperiments can be performed by using two differentstrategies. ... K.;Ferrari, A. C.; Mauri, F.Nat. Mater.2007, 6, 198. (24) Ignatovich, F.

3 May 2011: These are related to the fluid dynamical vis-cosity (0.911 mPa s for water at 24 C) and particlesize. ... Am. Chem. Soc. 2009, 131, 3611–3620. 24. Sun, Z.; Hasan, T.; Torrisi, F.; Popa, D.; Privitera, G.; Wang, F.;Bonaccorso, F.; Basko, D.

19 Feb 2016: quencydependenceof their surface impedance,which. manifests as electromagnetic losses [24, 25] 2 and. ... andareequivalenttoatransmissionlinemodel [24,57]. The electrical properties of a CPW are related to its.

17 Mar 2022: Combining the above, we get a transcendental equa-tion [24,74,91]. sF E2F,SLG sF 0E 2F 0,SLG. =. ( ... d,. (24). where = ω iτ 1opt and τopt is the free electron relaxationtime related to charge carrier mobility in SLG [107].

1 Jun 2020: Nat.Commun. 2013, 4, 1951.(24) Yan, H.; Low, T.; Zhu, W.; Wu, Y.; Freitag, M.; Li, X.; Guinea,F.; Avouris, P.; Xia, F.

11 Dec 2006: Fisica and Unitaa INFM, Politecnico di Torino, Corso Duca degli Abruzzi 24, I-10129 Torino, Italyb Dip.

11 Apr 2016: kcis-trans. = –0.03 h–1. ktrans-cis. = –0.79 h–1. kcis-trans. = –0.24 h–1. ... G). %%. 24.0. 2,696 2,698 2,700 2,702 2,704 60 62 64 66 68 70 72 74 76.

25 Mar 2010: arX. iv:1. 003. 4714. v1 [. cond. -mat. oth. er]. 24. ... Express 16, 20943 (2008). [24] A. Schmidt, S. Rivier, W. B.

15 Aug 2022: The samples are placed in a C6S2-anhydrous isopropylalcohol (IPA) mixture with a concentration 1 mmol/L for 24 h. ... 3, 897–900 (2003). 24. Jeong, H. et al. A new approach for high-yield metal - molecule - metaljunctions by direct metal transfer method

3 May 2011: kxeΓkx|τ| (24). Thus, the corresponding autocorrelation functions for the ve stochastic vari-ables X,Y,Z,ϕ,θ decay with relaxation frequencies:.

25 Mar 2013: Opt. Soc. Am. B 14(10), 2716–2722 (1997). 24. J. Mertz, “Nonlinear microscopy: new techniques and applications,” Curr. ... The 2D peak is still single Lorentzian, but 24 cm1 larger than that of the individual flakes.

13 Nov 2006: 2Cambridge University, Engineering Department, 9 JJ Thompson Avenue, Cambridge CB3 0FA, United KingdomReceived 29 August 2005; revised manuscript received 24 February 2006; published 25 April 2006. ... S. Dresselhaus, Phys. Rev. B 71,045417 2005. 24 P. B.

24 Mar 2009: 064304-2 Cantoro et al. J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. ... J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169.

6 Dec 2006: 85 (av.) 31.4 (av.) 3.24 63.5ta-C:H Homog. 70 28.4 2.35 70 6 30ta-C:H Homog 70 28.4 2.35 43 8.4 ... cm3and a internal layer 63.5 nm thick, with density of3.24 g/cm3[ 12].

30 Mar 2023: Switching energy <6 nJ 10 pJ 10 pJ 24 nJ. Endurance 4  104 1015 107 106. ... omm. ons License. 2023 Wiley-VCH GmbH2205402 (7 of 24). www.advmat.dewww.advancedsciencenews.com. Adv.

16 Jun 2021: S12), from which we extract τs =24.24.0 ns and τl =3.530.09 µs (red), τs =104.6 2.7ns. ... This is in agreement with. Refs. [24, 25]. We extract and show in Supplementary Fig.

16 Dec 2021: coefficient of resistance.24 Single-crystal (SC)CVD SLG, coupled to photonic waveguides, was used forultrafast, zero-dark-current telecom photodetectors (PDs) fordatacoms,25 and wafer-scale integration of electro-absorptionmodulators ... We also evaluate

13 Nov 2006: Fichet, W.T.S. Huck, Langmuir 19 (2003) 1963.[24] Y.N. Xia, G.M. Whitesides, Adv.

4 Aug 2008: and density, compared with those by S-bend ca-thodic vacuum arc.5,16,20,24 The thickest ta-C measured herehas a density of 2.6 g /

1 Mar 2021: 24 Siliconphotonics (SiPh) modulators for 30 Gbaud applications haveIL 23 dB higher than InP- and LiNbO3-basedmodulators,25 because of the free carrier effect,26 requiringdevice lengths in the mm scale. ... copy. We collect 8909 spectra on 48 crystals

20 Mar 2023: Received: January 6, 2023Accepted: February 24, 2023. Artic. le. www.acsnano.org. XXXX The Authors. ... Phys.Rev. B 2016, 94, 075104.(24) Golasa, K.; Grzeszczyk, M.; Molas, M.

16 Mar 2010: in situ the improvement is limited due to there-adsorption of atmospheric gases and water vapor.22 Cur-rent annealing has been used for in situ removal ofadsorbates,23,24 in

20 Jun 2017: 24), 1.5 mm (ref. 23) and 2 mm(ref. 27). Both inkjet printing and vacuum filtration are promisingtechniques to fabricate GSAs for QCLs, because they can beused to deposit films ... Sel. Top. Quantum Electron. 20, 8500109 (2014).24. Sun, Z. et al.

27 Jan 2021: photoexcitation.16,17 As a result of theseproperties, along with the ability to fabricate TMDs onwafer-scale,3,1820 these have found applications in photo-detectors,2123 photovoltaics,24 ... Progress, Challenges,and Opportunities for 2D Material Based

7 Apr 2008: A similar behaviour isobserved for the longitudinal optic (LO) G2 peak of dopedmetallic nanotubes8,9,24, for exactly the same reasons. ... Phys. Rev. B 73, 155426 (2006). 24. Tsang, J. C., Freitag, M., Perebeinos, V., Liu, J. &

7 Apr 2020: Wang and S. Dong, Nanoscale, 2012, 4, 5814.24 R. Leary and A.

6 Dec 2006: Diamond and Related Materials 9 (2000 ) 771–776www.elsevier.com/locate/diamond. Density, sp3 content and internal layering of DLC films byX-ray reflectivity and electron energy loss spectroscopy. A. LiBassi a, A.C. Ferrari b,, V. Stolojan c, B.K.

6 Oct 2008: P. Herman, J. Vac. Sci. Technol. B 24, 3173 2006.35A. Vijayaraghavan, S.