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Raman spectroscopy of GaSe and InSe post-transition metal…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Faraday.pdf12 Apr 2021: Biscaras and A. Shukla, Nanotechnology,. 2013, 24, 415708.17 L. Quan, et al., J. ... Bull., 2002, 37,. 169.24 R. M. Hoff, J. C. Irwin and R. -
Articleshttps://doi.org/10.1038/s41565-018-0145-8 Broadband,…
www-g.eng.cam.ac.uk/nms/publications/pdf/370_SI.pdf8 Feb 2021: σ̄(3)xxxx(ω, EF , 0) =17G(2|EF |, ω+) 64G(2|EF |, 2ω+)|. 24(ω+)4. ... 45G(2|EF |, 3ω+). 24(ω+)4(S1). 1. Supplementary Fig. 1. THG power dependence. -
Covalently interconnected transition metal dichalcogenide networks…
www-g.eng.cam.ac.uk/nms/publications/pdf/419_SamoriNEW.pdf26 Apr 2021: Chem. Soc. Rev. 44, 7715–7736 (2015). 24. Sim, D. M. et al. ... 24, 6524–6531 (2014). 41. Li, S.-L., Tsukagoshi, K., Orgiu, E. & Samorì, P. -
© 2021 Wiley-VCH GmbH Supporting Information for Small, DOI: ...
www-g.eng.cam.ac.uk/nms/publications/pdf/426_Supp.pdf9 Jun 2021: Au/WS2/P ZT/Au 24.3 3.5 0 µA / 0 µW 0.15 µA / 0.53 µW 10 S36. -
Nanophotonics
www-g.eng.cam.ac.uk/nms/publications/pdf/414.pdf7 Jan 2021: Such antenna geometries arewidely used in THz optoelectronics [2, 4, 24, 31] and bothenable broadband operation [2, 32]. ... drain (d) edge-electrodes based on a coplanar strip-line (CPS) geometry [24], Figure 1B. -
In Situ Observation of Low‐Power Nano‐Synaptic Response in Graphene…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Huitemp.pdf4 Aug 2021: Second, GO can be prepared inexpensively via LPE. Spray-coating allows conformal coverage surfaces with complex shapes.[24] This approach is very attrac-tive from an industrial point of view. ... Park, M.-J. Park, J.-S. Lee, Adv. Funct. Mater. 2018, 28, -
Terahertz Frequency Combs Exploiting an On-Chip, Solution-Processed,…
www-g.eng.cam.ac.uk/nms/publications/pdf/405_new.pdf7 Jan 2021: This would allow THzQCL FCSs to be fully stabilized against primary frequencystandards.24. ... a multiheterodyne detectionscheme, in which the QCL-comb was mixed with a fullystabilized optically rectified THz-frequency comb.24. -
Exciton–phonon coupling strength in single-layer MoSe2 at room…
www-g.eng.cam.ac.uk/nms/publications/pdf/419.pdf15 Feb 2021: 61. calculated S for LO phonons as a function of the polarizationparameter for 1L-MoSe2, finding 1.93–2.24. ... B 56, 1077–1080 (1997). 24. Scarpelli, L. et al. Resonantly excited exciton dynamics in two-dimensionalMoSe2 monolayers. -
Quantum Control of the Tin-Vacancy Spin Qubit in Diamond
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Debroux.pdf16 Dec 2021: Box 5046, 2600 GA Delft, Netherlands. (Received 24 May 2021; accepted 16 September 2021; published 30 November 2021). ... state host for scalable fabrication of quantum light-matterinterfaces [23], enabling all-optical control [24–27]. -
Covalently interconnected transition metal dichalcogenide networks…
www-g.eng.cam.ac.uk/nms/publications/pdf/419_Samori_SI.pdf1 Mar 2021: emission25 (Supplementary Fig. 24), where ln(I/T2) is linear with E1/2, as for:. ... Science. 356, 69–73 (2017). 24. Shu, J. et al. The intrinsic origin of hysteresis in MoS2 field effect transistors. -
Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021NanoLett.pdf27 Apr 2021: Dint(μ) = ωμ ω0 μD1 = D2μ2/2 D3μ3/6 D4μ4/24. , is shown in Figure 3b, top. ... Nano Lett.2014, 14, 62316236.(24) Robert, C.; Picard, R.; Lagarde, D.; Wang, G.; Echeverry, J. -
Optoelectronic mixing with high-frequency graphene transistors
www-g.eng.cam.ac.uk/nms/publications/pdf/2021montanaro.pdf9 Jun 2021: Graphene-basedoptoelectronic devices are compatible with Si platforms16,24–27.Therefore, graphene-based OEMs could combine telecomoperation and CMOS compatibility. ... 24. Pospischil, A. et al. CMOS-compatible graphene photodetector covering alloptical -
Confinement of long-lived interlayer excitons in WS2/WSe2…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch.pdf16 Jun 2021: ount. s). 0. 6. 12. 18. 24. x20. x4. x1. Fig. ... Nat. Mater. 13, 247–252 (2013). 24. Byrnes, T. et al. Exciton-polariton condensates. -
Supplementary information for Confinement of long-lived interlayer…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Montblanch_supp.pdf16 Jun 2021: S12), from which we extract τs =24.24.0 ns and τl =3.530.09 µs (red), τs =104.6 2.7ns. ... This is in agreement with. Refs. [24, 25]. We extract and show in Supplementary Fig. -
Tunable, Grating‐Gated, Graphene‐On‐Polyimide Terahertz Modulators
www-g.eng.cam.ac.uk/nms/publications/pdf/409_new.pdf23 Mar 2021: multiple SLGs.[17,22] At THz frequencies, however, interband transitions are usually blocked due to the fact that as-prepared SLG is doped,[23,24] hence intraband electronic transi-tions dominate ... Coleman, et al., 2D. Mater. 2020, 7, 022001. [24] K. F -
High-responsivity graphene photodetectors integrated on silicon…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Schuler.pdf18 Jun 2021: Sel. Top. Quantum Electron. 24, 1–12 (2018).16. Nagarajan, R. et al. ... Nat. Photonics 7, 883–887 (2013).24. Wang, X., Cheng, Z., Xu, K., Tsang, H. -
Efficient phonon cascades in WSe2 monolayers
www-g.eng.cam.ac.uk/nms/publications/pdf/415_natcomm.pdf25 Jan 2021: J. Phys. Condens. Matter 23, 334205 (2011). 24. Ursaki, V. et al. -
Graphene overcoats for ultra-high storage density magnetic media
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Dwivedi.pdf9 Jun 2021: We perform Raman mea-surements at 785 nm, the available Raman wavelength closest tothat used in HAMR (830 nm25,55), with a spot size 1.24 μm, asdetermined by the razor ... 75 on a 0.24 cm2. area, is investigated using an electrochemical corrosionmethod51 -
Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz…
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Asgari_new.pdf16 Dec 2021: coefficient of resistance.24 Single-crystal (SC)CVD SLG, coupled to photonic waveguides, was used forultrafast, zero-dark-current telecom photodetectors (PDs) fordatacoms,25 and wafer-scale integration of electro-absorptionmodulators ... We also evaluate -
Wafer-Scale Integration of Graphene-Based Photonic Devices
www-g.eng.cam.ac.uk/nms/publications/pdf/412_ACSnano.pdf1 Mar 2021: 24 Siliconphotonics (SiPh) modulators for 30 Gbaud applications haveIL 23 dB higher than InP- and LiNbO3-basedmodulators,25 because of the free carrier effect,26 requiringdevice lengths in the mm scale. ... copy. We collect 8909 spectra on 48 crystals -
HBN-Encapsulated, Graphene-based, Room-temperature Terahertz…
www-g.eng.cam.ac.uk/nms/publications/pdf/397.pdf7 Jan 2021: For these, the dominant detectionmechanism can be tailored by design.21 Their ultrafastdynamics22 and the ease of fabrication23,24 and integration25. ... C. Production and processing of graphene and 2dcrystals. Mater. Today 2012, 15, 564589.(24) Ferrari, -
Weak Distance Dependence of Hot-Electron-Transfer Rates at the…
www-g.eng.cam.ac.uk/nms/publications/pdf/412_pub.pdf27 Jan 2021: photoexcitation.16,17 As a result of theseproperties, along with the ability to fabricate TMDs onwafer-scale,3,1820 these have found applications in photo-detectors,2123 photovoltaics,24 ... Progress, Challenges,and Opportunities for 2D Material Based -
Graphene-Based Interconnects for Stable Dye-Sensitized Solar Modules
www-g.eng.cam.ac.uk/nms/publications/pdf/414_ACS.pdf26 Jan 2021: 23,24 and subsequently transferredto fluorine-doped Tin Oxide (FTO), the most common. ... in condition to react to lightby the mediation of a light-absorbing molecule, i.e., the dye)21,24. -
Shear and Breathing Modes of Layered Materials
www-g.eng.cam.ac.uk/nms/publications/pdf/2021Pizzi.pdf21 Sep 2021: m m m m m m m m24 7 (P11a) m 1 m 1 or m Equivalent Hall numbers: 22 (P1n1) 21, 25 (P11n) 24, 26 (P11b) 24, 27 (Pb11) 23, ... 222 / 2 or 222 / 124 24 (I212121) 222 2 / 222 / 2 or 222 / 125 25 (Pmm2) mm2 mm2 mm2 mm2 mm2 mm2 mm2 mm2126 25 (P2mm) mm2 m mm2 m
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