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The Ultrasmoothness ofDiamond-like Carbon SurfacesMichael…
www-g.eng.cam.ac.uk/nms/publications/pdf/Moseler_SCI2005.pdf15 Oct 2009: The PSD of EW sur-faces can be calculated analytically (24):. bkhkðsÞk2À 0 ej2nk2 sbkhkð0Þk2À þ. ... 2À þ k9k0 bkhk(s)k2À (24) witha cutoff k0 0 2p/2.35 nm. -
doi:10.1016/j.diamond.2005.01.023
www-g.eng.cam.ac.uk/nms/publications/pdf/Casiraghi_DRM2005.pdf15 Oct 2009: Model a b. EW 0 0. KPZ 0.38 0.24. MBE 1 1/4. ... sputtering (BMS) [50]. The growth exponent for MS a-C films is 0.24,. -
Phonon renormalization in doped bilayer graphene A. Das,1 B. ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Das_PRB2009.pdf14 Apr 2009: D peak: the 2Dpeak.18 This lies at 2690 cm1 and involves phonons atK q.18,24 q depends on the excitation energy, due todouble resonance, and the linear dispersion of ... Lett. 91, 233108 2007.24 A. C. Ferrari, Solid State Commun. 143, 47 2007.25 A. -
Hasan_JPCC2008
www-g.eng.cam.ac.uk/nms/publications/pdf/Hasan_JPCC2008.pdf21 Jan 2009: either due to the dispersant molecules surroundingthe SWNTs8,9,11,24 or to the presence of SWNT bundles.41-44. ... L.; Heinz, T. F. Phys. ReV. Lett. 2006, 96,167401. (24) Walsh, A. -
Plasma restructuring of catalysts for chemical vapor deposition of ...
www-g.eng.cam.ac.uk/nms/publications/pdf/Cantoro_JAP2009.pdf24 Mar 2009: 064304-2 Cantoro et al. J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. ... J. Appl. Phys. 105, 064304 2009. Downloaded 24 Mar 2009 to 129.169.178.169. -
Top-Gated Silicon Nanowire Transistorsin a Single Fabrication…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_ACSNANO2009.pdf26 Jun 2009: This ensures that RW RC ROX, no matter if conduction is via holes or elec-trons.24 Statistically, we note that our SiO2 gate dielec-tric can exhibit two different responses. ... Silicon-Nanowire Transistors withIntruded Nickel-Silicide Contacts. Nano Lett -
The Preparation, Characterization and Tribological Properties of…
www-g.eng.cam.ac.uk/nms/publications/pdf/Morrison_PSSA1999.pdf15 Oct 2009: Therefore, to a first order, the effect of neutraland radical species can be neglected and the deposition process may be described by asubplantation model of subsurface growth [24, 25]. ... Mater. 4,. 366 (1995).[23] K. Enke, Thin Solid Films 80, 227 -
st148018.dvi
www-g.eng.cam.ac.uk/nms/publications/pdf/PiscanecEPJ2007.pdf15 Oct 2009: This is the Case in graphene, graphite and nanotubes, where γan is much smallerthan γEP [12].The EPC contribution to γqη is given by the Fermi golden rule [24]:. ... 94, 015503 (2005)24. P.B. Allen, Phys. Rev. B 6, 2577 (1972); P.B. -
Electron-electron interactions and doping dependence of the…
www-g.eng.cam.ac.uk/nms/publications/pdf/basko_PRB2009.pdf20 Oct 2009: 24, 26, 32, 33,and 36. The G peak position, PosG, increases and its fullwidth at half maximum, FWHMG, decreases for both elec-tron and hole doping. ... 24 C. Casiraghi, S. Pisana, K. S. Novoselov, A. K. Geim, and A. -
Dielectrophoretic Assembly of High-Density Arrays of Individual…
www-g.eng.cam.ac.uk/nms/publications/pdf/Aravind_ACSNano2009.pdf28 Jul 2009: GO can be subse-quently reduced to graphene,23 but leavesa significant number of defects that disruptthe electronic properties.24 Recently, much. ... Nano Lett. 2008, 8,4283–4287. 24. Mkhoyan, K. A.; Contryman, A. W.; Silcox, J.; Stewart, D.
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