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21 - 30 of 38 search results for tj KaKaotalk:PC53 where 0 match all words and 38 match some words.

  1. Results that match 1 of 2 words

  2. PHYSICAL REVIEW E 83, 066706 (2011) Strategies for improving ...

    www.tcm.phy.cam.ac.uk/~gjc29/papers/LeeConduit10.pdf
    24 Aug 2020: i=1R. j =1 E(τi )Ti Tj τi τ2j (τj τi )R. ... 20 R. k=12k. [E0. E(τk ). ]2. = 4C2R. k=1Tkτk. [ Rj =1 Tj τ.

  3. PHYSICAL REVIEW B 84, 064513 (2011) First-principles calculation of…

    www.tcm.phy.cam.ac.uk/~gjc29/papers/ConduitMeir11i.pdf
    24 Aug 2020: Jij = 2eh. σ. d. 2π[tij G<σ (j,i) tj iG<σ (i,j )]. (7). Transforming again into the diagonalized basis, the localcurrent is. Jij = 2eh.

  4. royalsocietypublishing.org/journal/rspa ResearchCite this article:…

    www.damtp.cam.ac.uk/user/mjc249/pdfs/M_function_spec.pdf
    23 Sep 2020: i] x2[i]N[i]1. j=0b̃[i]j Tj. (x[i]d[i]. ). =. d2[i] x2[i].

  5. An introduction to the study of non linear waves ...

    https://www.dpmms.cam.ac.uk/study/III/Introductiontononlinearanalysis/2020-2021/cours-camb.pdf
    29 Sep 2020: An introduction to the study of non linear waves. Raphaël Danchin and Pierre Raphaël. August 13, 2020. 2. Chapter 1. Lebesgue spaces. This chapter is devoted to the derivation of fundamental properties of Lebesgue spaces Lp(Rd).After recalling

  6. 2. The Integer Quantum Hall E↵ect In this section ...

    www.damtp.cam.ac.uk/user/tong/qhe/two.pdf
    5 Oct 2020: 2. The Integer Quantum Hall Eect. In this section we discuss the integer quantum Hall eect. This phenomenon can be. understood without taking into account the interactions between electrons. This means. that we will assume that the quantum states

  7. Thermal Modeling and Design Optimization of PCB Vias and Pads

    https://tenglong.eng.cam.ac.uk/files/thermalmodelinganddesignoptimizationofpcbviasandpads.pdf
    11 Oct 2020: Tc Case temperature of a package (chip) (oC). Tj Junction temperature of a chip (oC). ... P. Tj. Ta. jt ta. jc bacb. Tt. Tc Tb. Junction Top case Ambient.

  8. Power Loss Characterization and Modeling for GaN-Based Hard-Switching …

    https://tenglong.eng.cam.ac.uk/files/power_loss_characterization_and_modeling_for_gan-based_hard-switching_half-bridges_considering_dynamic_on-state_resistance.pdf
    11 Oct 2020: Fig. 26. RDS(on) quantitative analysis at Vds=400 V and Tj=125 C. ... The calculated Tj can be obtained by,. 𝑇𝑇𝑇𝑇 = 𝑅𝑅𝑑𝑑(𝑇𝑇𝑑𝑑) 𝐸𝐸𝑙𝑙𝑙𝑙𝑙𝑙𝑙𝑙 𝑓𝑓𝑙𝑙𝑠𝑠

  9. tpel-2970240-pp

    https://tenglong.eng.cam.ac.uk/files/gan_parallel_light_load_efficiency_increase_2.pdf
    11 Oct 2020: The on-state resistance Rds,on of GaN HEMTs has a strongdependency on the junction temperature Tj, e.g., the Rds,onof GS66508T is tripled when Tj increases from 0 C ... 2(a), and the low-side switches are the devices undertest (DUTs). The junction

  10. C O P i Lc a m b r ...

    https://www.mmll.cam.ac.uk/files/copil_6_7_vanderwal.pdf
    13 Oct 2020: C O P i Lc a m b r i d g e o c c a s i o n a l p a p e r s in l i n g u i s t i c s. Volume 6, Article 7: 201–236, 2012 | ISSN 2050-5949. SUBJECT AGREEMENT AND THE EPP IN. BANTU AGREEING INVERSION. j e n n e k e v a n d e r w a l. University of

  11. C O P i Lc a m b r ...

    https://www.mmll.cam.ac.uk/files/copil_6_4_torr.pdf
    13 Oct 2020: the following two configurations:. “. CPWHi WHj WHn. rIP. ti tj tn. ]. ‰. “. ... CPWHi rIP WHj WHn rIP ti tj tn. ]]. ‰.

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