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tpel-2970240-pp
https://tenglong.eng.cam.ac.uk/files/gan_parallel_light_load_efficiency_increase_2.pdf11 Oct 2020: The on-state resistance Rds,on of GaN HEMTs has a strongdependency on the junction temperature Tj, e.g., the Rds,onof GS66508T is tripled when Tj increases from 0 C ... 2(a), and the low-side switches are the devices undertest (DUTs). The junction -
Power Loss Characterization and Modeling for GaN-Based Hard-Switching β¦
https://tenglong.eng.cam.ac.uk/files/power_loss_characterization_and_modeling_for_gan-based_hard-switching_half-bridges_considering_dynamic_on-state_resistance.pdf11 Oct 2020: Fig. 26. RDS(on) quantitative analysis at Vds=400 V and Tj=125 C. ... The calculated Tj can be obtained by,. ππππ = π π ππ(ππππ) πΈπΈππππππππ πππππ π -
Thermal Modeling and Design Optimization of PCB Vias and Pads
https://tenglong.eng.cam.ac.uk/files/thermalmodelinganddesignoptimizationofpcbviasandpads.pdf11 Oct 2020: Tc Case temperature of a package (chip) (oC). Tj Junction temperature of a chip (oC). ... P. Tj. Ta. οjt οta. οjc οbaοcb. Tt. Tc Tb. Junction Top case Ambient.
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