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Symmetric prismatic tensegrity structures: Part I. Configuration and…
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009GuestD.pdf6 Feb 2014: Higher-Order Rigidity – What Is the Proper Definition. Discrete & Computational Geometry 11, 193–200.Connelly, R., Terrell, M., 1995. -
STu1N.8.pdf CLEO:2014 © 2014 OSA Sub-50 fs compressed pulses ...
www-g.eng.cam.ac.uk/nms/publications/pdf/STu1N.8.pdf10 Jun 2014: 1500 1525 1550 1575 1600 1625. -40. -20. 0. -600 -400 -200 0 200 400 600. -
STu1I.2.pdf CLEO:2014 © 2014 OSA Synchronously coupled fiber lasers…
www-g.eng.cam.ac.uk/nms/publications/pdf/STu1I.2.pdf10 Jun 2014: Express 20, 25077 (2012).8. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl. -
STh3N.8.pdf CLEO:2014 © 2014 OSA Nanotube mode-locked, low repetition …
www-g.eng.cam.ac.uk/nms/publications/pdf/STh3N.8.pdf10 Jun 2014: Express21, 23261 (2013).10. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl. -
RAPID COMMUNICATIONS PHYSICAL REVIEW B 89, 121402(R) (2014) Effects…
www-g.eng.cam.ac.uk/nms/publications/pdf/PhysRevB.89.121402.pdf6 Mar 2014: 200 K. 230 K260 K. 1300120011001000. Raman Shift (cm-1. ). 30 T(b) (1,1). ... Vunit. l3B. 2B. γ 21. 2v. V1B 4.1 106 cm1. This value leads to W (kz) 104 cm1 at 30 T and 200 K,too small to explain the observed -
Photodetectors based on graphene, other two-dimensional materials and …
www-g.eng.cam.ac.uk/nms/publications/pdf/nnano.2014.215.pdf6 Oct 2014: Because the optical phonon energy in graphene is large45,46 (200 meV), hot carriers created by the radiation field can remain at a tempera-ture Te (and thus energy kBTe, with ... 100. –200. –300. –400. –500. Phot. ocur. rent. (nA. ). Gate -
Numerical analysis of morphing corrugated plates
www-g.eng.cam.ac.uk/advancedstructures/files/pdf/2009Procedia.pdf3 Feb 2014: 5. 6. 7. θ [rad]. m/D. κ T0. φ = 43o, t = 0.2 mmL = 200 mmL = 300 mmL = 400 mmL = 500 mm. ... Gentilini C. et al./ Physics Engineering 01 (2009) 000–000. 200 250 300 350 400 450 500. -
nl400516a 1..6
www-g.eng.cam.ac.uk/nms/publications/pdf/nl400516a.pdf4 Sep 2014: sweeping both top gates simultaneously at a drain-sourcevoltage VD = 200 mV. ... b) Electrical transfer characteristics of a 1L-MoS2 FET at biasvoltage VD = 200 mV. -
Luminsescence: The Instrumental Key to the Future of Nanotechnology
www-g.eng.cam.ac.uk/nms/publications/pdf/Acf_Ch06_2014.pdf5 Mar 2014: In the 1,200–1,350 nm emission range, exciton-exciton resonances of SWNTs such as (13,2), (12,4), (10,5), (9,7), (10,6), (8,7), (11,4), ... 6.4a) with respect to other tubes. The strong PL emission in the 1,080–1,200 nm range. -
JTu4A.67.pdf CLEO:2014 © 2014 OSA Graphene saturable absorber power…
www-g.eng.cam.ac.uk/nms/publications/pdf/JTu4A.67.pdf10 Jun 2014: 0.0. 0.2. 0.4. 0.6. 0.8. 1.0. 0 50 100 150 200 250 300 3500. ... Commun. 4, 1987, (2013).7. D. Popa, et al., “Sub 200 fs pulse generation from a graphene mode-locked fiber laser,” Appl.
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