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27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive

2 Jul 2008: 100. 200. 300. 400. A ta-C. GT1060 cm-1. 633nm. 514.5nm. 351nm. ... Gilkes et al. [16] This work. 200 300 400 500 600 700 800.

30 Nov 2008: 7065, pp. 197-200, 2005. 3. S. V. Morozov, K. S. Novoselov, M.

5 Nov 2008: range (1550 nm), as discussed below. Moreover, it has a lowglass-transition temperature (Tg 85 8C), decomposes in airjust above 200 8C,[20,21] and absorbs large amounts of moisturedue to ... which they generated 200 fs pulses at 1560 nm, amongst

29 May 2008: for each 900 nm particlethere are 2000 particles with 200 nm hydrodynamic diameter.Therefore, in this particular system there are more particleswith hydrodynamic diameter 200 nm. ... 1010 wt)DLS n/a but potentially 200 nm and 900 nm In solvent.

17 Jul 2008: Figure 4 shows the PL of the nanostructures for excita-tion at 200 nm. ... PL of each sample in the region 200–900 nm is displayed inFigure 4.

27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm).

27 May 2008: The voltage level we typically use is on theorder of 150–200 V, with pulse duration of 37 ms.

27 May 2008: 3(c) is found to be. ARTICLE IN PRESS. PL inte. nsity (. arb. units). 0. 50. 100. 150. 200. Wavelength (nm). 900 950 1000 1050 1100 1150 1200.

27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device