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Electron and Phonon Properties of Graphene:Their Relationship with…
www-g.eng.cam.ac.uk/nms/publications/pdf/Charlier_BOOK2008.pdf7 Jan 2008: Electron and Phonon Properties of Graphene:Their Relationship with Carbon Nanotubes. J.-C. Charlier1, P. C. Eklund2 J. Zhu2, A. C. Ferrari3. 1 Unité de Physico-Chimie et de Physique des MatériauxUniversité Catholique de Louvain1 Place Croix du -
Using APL format
www-g.eng.cam.ac.uk/nms/publications/pdf/Ferrari_APL1999.pdf20 Feb 2008: Our final val-ues, corresponding to B, 450 GPa, are Ebulk. 5 750– 790 GPa, Gbulk5 300– 395 GPa, Esurf5 200– 300GPa, andGsurf5 70– 150 GPa. -
nnano.2008.67 210..215
www-g.eng.cam.ac.uk/nms/publications/pdf/Das_NN2008.pdf7 Apr 2008: Two-dimensional gas of massless Dirac fermions in graphene. Nature 438,. 197 – 200 (2005).3. -
Nanoscale freighter hauls its first load - tech - 10 April 20...
www-g.eng.cam.ac.uk/nms/highlights-press/NSfirstload.pdf11 Apr 2008: The central tube is one micrometer long and acts as a rail forthe second, smaller, 200-nanometre nanotube. -
24.4 res highs MH SA
www-g.eng.cam.ac.uk/nms/highlights-press/NanotechnologyStencilissimoNat.pdf27 Apr 2008: The team believes that this rapid growth lasted for 100–200 million years — a mere blip in galaxy evolution — and that these far-off galaxies went on to resemble the massive -
Nanowire Lithography on SiliconAlan Colli,† Andrea Fasoli,‡ Simone…
www-g.eng.cam.ac.uk/nms/publications/pdf/Colli_NL2008.pdf21 May 2008: h) SEM micrograph of a monolithic Sijunction with overlapping NW masks (gray ) SiO2; blue ) Si).Scale bar is 200 nm. ... The current flowing throughthe NW is about 2 orders of magnitude lower than thatflowing through the 200 times wider channel of the -
doi:10.1016/j.physe.2007.11.034
www-g.eng.cam.ac.uk/nms/publications/pdf/Hu_PE2007.pdf27 May 2008: In the case of FETs on SAM, Cr/Au electrode patternsare made at first on n-type Si wafers with a 200 nmthermally oxidized layer, using the photolithographyprocess mentioned above. ... mm), SiO2/Sisubstrate (oxidized layer of 200 nm) and device -
doi:10.1016/j.physe.2007.10.024
www-g.eng.cam.ac.uk/nms/publications/pdf/Mattevi_PE2007.pdf27 May 2008: exposing a H2 sputtered (at 580 1C, 1 h), 0.5-nm-thick Fe film to undilutedC2H2 (2107 mbar pressure) for 5 min at 580 1C (scale bar: 200 nm). -
doi:10.1016/j.physe.2007.10.044
www-g.eng.cam.ac.uk/nms/publications/pdf/Hsieh_PE2007.pdf27 May 2008: The voltage level we typically use is on theorder of 150–200 V, with pulse duration of 37 ms. -
doi:10.1016/j.physe.2007.10.058
www-g.eng.cam.ac.uk/nms/publications/pdf/Tan_PE2007.pdf27 May 2008: 3(c) is found to be. ARTICLE IN PRESS. PL inte. nsity (. arb. units). 0. 50. 100. 150. 200. Wavelength (nm). 900 950 1000 1050 1100 1150 1200.
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